Method for driving power semiconductor element

Abstract

The integrated gate double transistor (IGDT) has two controllable gates (G 1 , G 2 ), the first gate (G 1 ) is placed on the cathode side and is driven by the first gate current through the low inductance first gate connection, while the second gate (G 2 ) is placed on the anode side and driven by the second gate current through the low inductance second gate connection. During the IGDT cut-off operation, the rate of rise of the voltage on the IGDT is limited by the two gates. Limiting the rate of rise of the voltage across the IGDTs prevents voltage growth at different rates in the series-connected IGDT circuit and thus prevents overheating and destruction of individual IGDTs due to uneven loading.

Description

technical field

[0001] The invention relates to the field of high-power electronics.

[0002] The invention relates to a method of driving a power semiconductor element, which is an integrated gate double transistor (IGDT) with two controllable gates, the first gate being provided on the cathode side and connected by a low inductance The first gate connection is driven by the first gate current, and the second gate is provided on the anode side and driven by the second gate current through a low inductance second gate connection.

[0003] The invention also relates to a circuit arrangement for implementing such a method. Background technique

[0004] In the field of power semiconductor electronics, many kinds of fast and powerful semiconductor components have been created in order to find the best turn-off semiconductor components. In order to switch more power, it is necessary to reduce the losses of semiconductor components that are becoming smaller and smaller. Both dy...

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