Polysilicon alkaline wool making method

A technology of polycrystalline silicon and polycrystalline silicon wafers, applied in the field of solar cells, can solve the problems of high cost and low price, and achieve the effect of saving production costs
CN102437044AInactive Publication Date: 2012-05-02INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
1 Cites 5 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2012-05-02
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a polysilicon alkaline wool making method, which comprises the following steps that: 1) preparing alkaline wool making solution; 2) heating the well-prepared wool making solution, and soaking one piece of polysilicon into the wool making solution to make wool; 3) rinsing the wool-made polysilicon piece; 4) cleaning the rinsed polysilicon piece with acid, and performing the secondary rinsing; and 5) drying the polysilicon piece after the secondary rinsing to complete the polysilicon alkaline wool making procedures.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of solar cells, in particular to an alkaline texturing method suitable for the production of polycrystalline silicon solar cells. Background technique

[0002] Nowadays, the competition in the solar cell manufacturing industry is becoming more and more fierce. How to reduce the production cost of the battery while stabilizing the performance of the battery has undoubtedly become an effective way for various battery manufacturers to improve their competitiveness. Considering the high cost of acid texturing in the production process of existing polysilicon cells, including the cost of production equipment and the cost of texturing agent, we tested an alkali texturing method NaClO 3 -NaOH, its own price is low, and it is suitable for low-cost tank-type texturing equipment, which can effectively reduce the cost of polysilicon texturing. Contents of the invention

[0003] The object of the present invention is to provid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More