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Polysilicon alkaline wool making method

A technology of polycrystalline silicon and polycrystalline silicon wafers, applied in the field of solar cells, can solve the problems of high cost and low price, and achieve the effect of saving production costs

Inactive Publication Date: 2012-05-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Considering the high cost of acid texturing in the production process of existing polysilicon cells, including the cost of production equipment and the cost of texturing agent, we tested an alkali texturing method NaClO 3 -NaOH, its own price is low, and it is suitable for low-cost tank-type texturing equipment, which can effectively reduce the cost of polysilicon texturing

Method used

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  • Polysilicon alkaline wool making method
  • Polysilicon alkaline wool making method
  • Polysilicon alkaline wool making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Example 1 Alkaline Texturing System NaClO 3 -The preparation method of NaOH.

[0033] The alkaline texturing solution is prepared from analytically pure powder chemical reagents and deionized water, and the operation is carried out on a laboratory bench with a fume hood. Use an electronic balance to weigh the analytically pure NaClO 3 180 grams of powder, 25 grams of NaOH powder, put the two chemical reagents in a polytetrafluoroethylene tank with a volume of 2.5L, add deionized water to the 2L water level, and use a glass rod to stir evenly.

Embodiment 2

[0034] Embodiment 2 adopts alkaline texturing system NaClO 3 -The specific implementation steps of NaOH texturing.

[0035] Prepare the texturing liquid in a 2.5L polytetrafluoroethylene tank, place the polytetrafluoroethylene tank in a constant temperature water bath, set the temperature of the water bath at 85°C, and keep the texturing liquid at 80°C ± 5°C.

[0036] Take a piece of polycrystalline silicon wafer with a size of 156mm×156mm, clamp the polycrystalline silicon wafer with tweezers, soak it in the texturing solution in the polytetrafluoroethylene tank, and perform texturing for 55-60 seconds. There are two main functions in the texturing process, one is to remove oil stains and wire saw damage layers, and the other is to form a light-trapped suede surface. The related chemical reactions are shown in the following reaction formula.

[0037] After the texturing is completed, place the polysilicon wafer in a rinsing tank filled with deionized water for 120 seconds of...

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Abstract

The invention relates to a polysilicon alkaline wool making method, which comprises the following steps that: 1) preparing alkaline wool making solution; 2) heating the well-prepared wool making solution, and soaking one piece of polysilicon into the wool making solution to make wool; 3) rinsing the wool-made polysilicon piece; 4) cleaning the rinsed polysilicon piece with acid, and performing the secondary rinsing; and 5) drying the polysilicon piece after the secondary rinsing to complete the polysilicon alkaline wool making procedures.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to an alkaline texturing method suitable for the production of polycrystalline silicon solar cells. Background technique [0002] Nowadays, the competition in the solar cell manufacturing industry is becoming more and more fierce. How to reduce the production cost of the battery while stabilizing the performance of the battery has undoubtedly become an effective way for various battery manufacturers to improve their competitiveness. Considering the high cost of acid texturing in the production process of existing polysilicon cells, including the cost of production equipment and the cost of texturing agent, we tested an alkali texturing method NaClO 3 -NaOH, its own price is low, and it is suitable for low-cost tank-type texturing equipment, which can effectively reduce the cost of polysilicon texturing. Contents of the invention [0003] The object of the present invention is to provid...

Claims

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Application Information

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IPC IPC(8): H01L21/306
Inventor 陈腾赵有文
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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