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Semiconductor super junction power device

A technology of power devices and semiconductors, which is applied to semiconductor devices, electric solid-state devices, transistors, etc., and can solve problems such as long reverse recovery time

Active Publication Date: 2021-05-28
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of this, the purpose of the present invention is to provide a semiconductor superjunction power device with a fast reverse recovery speed to solve the long reverse recovery time caused by the minority carrier injection problem of the semiconductor superjunction power device in the prior art technical issues

Method used

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  • Semiconductor super junction power device
  • Semiconductor super junction power device
  • Semiconductor super junction power device

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Embodiment Construction

[0020] The technical solutions of the present invention will be fully described below through specific implementation manners with reference to the drawings in the embodiments of the present invention. At the same time, in order to clearly illustrate the specific implementation methods of the present invention, the schematic diagrams listed in the drawings of the specification enlarge the size of the layers and regions described in the present invention, and the listed figures do not represent the actual size. The embodiments listed in the specification should not be limited to the specific shapes of the regions shown in the drawings of the specification, but include the resulting shapes such as deviations caused by manufacturing and the like.

[0021] figure 2 It is a schematic cross-sectional structure diagram of the first embodiment of a semiconductor superjunction power device provided by the present invention, as figure 2 As shown, a semiconductor super-junction power ...

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Abstract

A semiconductor super junction power device provided by the embodiment of the invention comprises a super junction MOSFET unit array composed of a plurality of super junction MOSFET units, wherein each super junction MOSFET unit comprises a p-type body region located at the top of an n-type drift region, a p-type columnar doped region located below the p-type body region, an n-type source region located in the p-type body region, a grid dielectric layer located on the p-type body region, and a grid electrode and the n-type floating grid located on the grid dielectric layer, in the transverse direction, the grid electrode is located on the side close to the n-type source region, the n-type floating grid is located on the side close to the n-type drift region, and the grid electrode acts on the n-type floating grid through capacitance coupling; and an opening positioned in the grid dielectric layer, wherein the n-type floating grid is in contact with the p-type body region through the opening to form a p-n junction diode. According to the embodiment of the invention, the reverse recovery speed of the semiconductor super junction power device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor super-junction power devices, in particular to a semiconductor super-junction power device with fast reverse recovery speed. Background technique [0002] The equivalent circuit of the semiconductor superjunction power device in the prior art is as figure 1 As shown, it includes a source 101 , a drain 102 , a gate 103 and a body diode 104 , wherein the body diode 104 is an intrinsic parasitic structure in a semiconductor super-junction power device. The working mechanism of the semiconductor super-junction power device in the prior art is: 1) when the gate-source voltage Vgs is less than the threshold voltage Vth of the semiconductor super-junction power device, and the drain-source voltage Vds is greater than 0V, the semiconductor super-junction power device is in an off state; 2) When the gate-source voltage Vgs is greater than the threshold voltage Vth of the semiconductor super-junction...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78H01L27/06
CPCH01L29/7827H01L27/0629H01L29/0634H01L29/7804H01L29/788
Inventor 龚轶刘伟袁愿林刘磊王睿
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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