Sub-vertical-structure gallium nitride Schottky barrier diode and manufacturing method thereof

Abstract

The sub-vertical structure gallium nitride Schottky barrier diode comprises a substrate (1), a buffer layer (2), an n < + >-GaN epitaxial layer (3a) and an n <->-GaN epitaxial layer (3b) which are sequentially arranged from bottom to top, the upper surface of the n <->-GaN epitaxial layer (3b) is a Schottky electrode arrangement region (13b), and the partially exposed part of the upper surface of the n < + >-GaN epitaxial layer (3a) is an ohmic electrode arrangement region (13a); the first insulation protection layer (6a) covers the ohmic electrode arrangement area (13a) and the Schottky electrode arrangement area (13b) and further covers the side wall face of a step formed by the n +-GaN epitaxial layer (3a) and the n-GaN epitaxial layer (3b), and the first insulation protection layer (6a) is provided with an ohmic electrode (4) in a window formed in the ohmic electrode arrangement area (13a). The first insulating protective layer (6a) is provided with a Schottky electrode (5) in a window formed in the Schottky electrode installation region (13b). According to the Schottky barrier diode, forward current is increased, and reverse breakdown voltage is improved.

Description

technical field [0001] The invention relates to the technical field of third-generation semiconductor materials and devices, in particular to a structure of a gallium nitride Schottky barrier diode with a sub-vertical structure and a manufacturing method thereof. Background technique [0002] Schottky barrier diode (SBD) is the key device of the rectifier circuit. It uses the unidirectional conductivity of the device to change the physical characteristics of the circuit such as voltage, current, frequency, and conduction state, and realizes functions such as power switch and power conversion. It is widely used in the industry. In the process of electronic upgrading, more and more attention and application have been paid to it. It is the core device in China's industrial processing, automobile manufacturing, wireless communication, consumer electronics, power transmission and transformation, and new energy applications. Therefore, higher requirements are put forward for its f...

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Problems solved by technology

[0003] Schottky barrier diodes manufactured by traditional technology have technical problems of large reverse leakage current, low reverse withstand voltage and insufficient stability, so the manufacture of diodes with small reverse leakage current, high reverse withstand voltage and good stability is an urgent requirement of the market

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