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Semiconductor Power Devices

A technology of power devices and semiconductors, which is applied in the field of semiconductor power devices, can solve the problems of long reverse recovery time and achieve the effects of increasing reverse recovery speed, reducing chip size and reducing current

Active Publication Date: 2022-04-12
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of this, the purpose of the present invention is to provide a semiconductor power device with a fast reverse recovery speed, to solve the technical problem of long reverse recovery time caused by the minority carrier injection problem of the semiconductor power device in the prior art

Method used

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  • Semiconductor Power Devices
  • Semiconductor Power Devices
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Embodiment Construction

[0018] The technical solutions of the present invention will be fully described below through specific implementation manners with reference to the drawings in the embodiments of the present invention. At the same time, in order to clearly illustrate the specific implementation methods of the present invention, the schematic diagrams listed in the drawings of the specification enlarge the size of the layers and regions described in the present invention, and the listed figures do not represent the actual size. The embodiments listed in the specification should not be limited to the specific shapes of the regions shown in the drawings of the specification, but include the resulting shapes such as deviations caused by manufacturing and the like.

[0019] figure 2 It is a schematic cross-sectional structure diagram of the first embodiment of a semiconductor power device provided by the present invention, such as figure 2 As shown, a semiconductor power device provided by an em...

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Abstract

A semiconductor power device provided by an embodiment of the present invention includes at least one p-type body region located at the top of an n-type drift region, a first n-type source region and a second n-type source region located in the p-type body region; a first gate structure for controlling the on and off of the first current channel between the first n-type source region and the n-type drift region; for controlling the connection between the second n-type source region and the n-type drift region A second gate structure for turning on and turning off a second current channel between the n-type drift regions, the second gate structure being recessed in the n-type drift region. The semiconductor power device of the embodiment of the present invention has a small chip size and a fast reverse recovery speed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a semiconductor power device with small chip size and fast reverse recovery speed. Background technique [0002] The equivalent circuit of a prior art semiconductor power device such as figure 1 As shown, it includes a source 101 , a drain 102 , a gate 103 and a body diode 104 , wherein the body diode 104 is an intrinsic parasitic structure in a semiconductor power device. The working mechanism of the semiconductor power device in the prior art is: 1) when the gate-source voltage Vgs is less than the threshold voltage Vth of the semiconductor power device, and when the drain-source voltage Vds is greater than 0V, the semiconductor power device is in an off state; 2) when the gate-source voltage Vgs is greater than the threshold voltage Vth of the semiconductor power device, and when the drain-source voltage Vds is greater than 0V, the semiconductor power devi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06
CPCH01L29/0611H01L29/0615H01L29/0684H01L29/7813H01L29/7804H01L29/7831H01L29/407H10B69/00H01L29/0865
Inventor 龚轶毛振东刘伟刘磊袁愿林
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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