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igbt power device

A power device, n-type technology, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problem of long reverse recovery time, achieve the effect of improving reverse recovery speed and reducing current

Active Publication Date: 2022-04-15
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the purpose of the present invention is to provide a kind of IGBT power device with fast reverse recovery speed, to solve the technical problem that the reverse recovery time of IGBT power device in the related art is long because of minority carrier injection problem

Method used

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Embodiment Construction

[0019] The technical solutions of the present invention will be fully described below through specific implementation manners with reference to the drawings in the embodiments of the present invention. At the same time, in order to clearly illustrate the specific implementation methods of the present invention, the schematic diagrams listed in the drawings of the specification enlarge the size of the layers and regions described in the present invention, and the listed figures do not represent the actual size. The embodiments listed in the specification should not be limited to the specific shapes of the regions shown in the drawings of the specification, but include the resulting shapes such as deviations caused by manufacturing and the like.

[0020] figure 2 It is a schematic cross-sectional structure diagram of the first embodiment of an IGBT power device provided by the present invention, such as figure 2 As shown, an IGBT power device provided by an embodiment of the ...

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Abstract

An IGBT power device provided by the embodiments of the present invention, including the grid layer above the N -type drift area between the two P -shaped areas and the two P -shaped regions, is located in the grid medium layerType N floating grids; grids located on the grid layer and the grid on the N -type floating grid, and on the side of the grid pole on the horizontal directionThe insulation medium layer between the grid and the N -type floating grid; the first opening in the grid medium layer, the N -type floating gridThe contact forms the diode of the P‑n knot; the second opening in the grid medium layer to form a P‑n knot diode in contact with another P -shaped area through the second opening of the P -shaped area through the second opening.The invention can improve the reverse recovery speed of IGBT power devices.

Description

technical field [0001] The invention belongs to the technical field of IGBT power devices, in particular to an IGBT power device with fast reverse recovery speed. Background technique [0002] The schematic diagram of the cross-sectional structure of the IGBT (insulated gate bipolar transistor) power device of the related art is as follows figure 1 As shown, it includes the p-type collector region 31 and the n-type collector region 3 arranged at intervals at the bottom, and the p-type collector region 31 and the n-type collector region 3 are connected to the collector voltage through the collector metal contact layer 70; The n-type field stop region 32 above the collector region 31 and the n-type collector region 3, the n-type drift region 30 above the n-type field stop region 32, and at least two p-type drift regions at the top of the n-type drift region 30 Body region 33; n-type emitter region 34 is provided in each p-type body region 33, n-type emitter region 34 and p-ty...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/423H01L29/417H01L29/739H01L27/06
CPCH01L27/0664H01L29/7398H01L29/41741H01L29/42356H01L29/42364H01L29/7395H01L29/42376H01L29/0649H01L27/0629H01L29/0821H01L29/7889
Inventor 龚轶刘磊刘伟袁愿林王鑫
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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