Semiconductor Superjunction Power Devices

A technology of power devices and semiconductors, applied in semiconductor devices, electric solid-state devices, transistors, etc., can solve problems such as long reverse recovery time, achieve the effect of increasing reverse recovery speed and reducing current

Active Publication Date: 2022-04-15
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of this, the purpose of the present invention is to provide a semiconductor superjunction power device with a fast reverse recovery speed to solve the long reverse recovery time caused by the minority carrier injection problem of the semiconductor superjunction power device in the prior art technical issues

Method used

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  • Semiconductor Superjunction Power Devices
  • Semiconductor Superjunction Power Devices
  • Semiconductor Superjunction Power Devices

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Embodiment Construction

[0020] The technical solutions of the present invention will be fully described below through specific implementation manners with reference to the drawings in the embodiments of the present invention. At the same time, in order to clearly illustrate the specific implementation methods of the present invention, the schematic diagrams listed in the drawings of the specification enlarge the size of the layers and regions described in the present invention, and the listed figures do not represent the actual size. The embodiments listed in the specification should not be limited to the specific shapes of the regions shown in the drawings of the specification, but include the resulting shapes such as deviations caused by manufacturing and the like.

[0021] figure 2 It is a schematic cross-sectional structure diagram of the first embodiment of a semiconductor superjunction power device provided by the present invention, as figure 2 As shown, a semiconductor super-junction power ...

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Abstract

A semiconductor super-junction power device provided by an embodiment of the present invention includes a super-junction MOSFET unit array composed of a plurality of super-junction MOSFET units, and the super-junction MOSFET unit includes a p-type body region at the top of an n-type drift region, located a p-type columnar doped region below the p-type body region, an n-type source region located in the p-type body region, a gate dielectric layer located above the p-type body region, a gate and an n-type floating gate located above the gate dielectric layer, And in the lateral direction, the gate is located on the side close to the n-type source region, the n-type floating gate is located on the side close to the n-type drift region, and the gate acts on the n-type floating gate through capacitive coupling; An opening, through which the n-type floating gate is in contact with the p-type body region to form a p-n junction diode. The embodiment of the present invention improves the reverse recovery speed of the semiconductor super junction power device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor super-junction power devices, in particular to a semiconductor super-junction power device with fast reverse recovery speed. Background technique [0002] The equivalent circuit of the semiconductor superjunction power device in the prior art is as figure 1 As shown, it includes a source 101 , a drain 102 , a gate 103 and a body diode 104 , wherein the body diode 104 is an intrinsic parasitic structure in a semiconductor super-junction power device. The working mechanism of the semiconductor super-junction power device in the prior art is: 1) when the gate-source voltage Vgs is less than the threshold voltage Vth of the semiconductor super-junction power device, and the drain-source voltage Vds is greater than 0V, the semiconductor super-junction power device is in an off state; 2) When the gate-source voltage Vgs is greater than the threshold voltage Vth of the semiconductor super-junction...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/78H01L27/06
CPCH01L29/7827H01L27/0629H01L29/0634H01L29/7804H01L29/788
Inventor 龚轶刘伟袁愿林刘磊王睿
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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