Double-gate TFET with graphene strip heterojunction and switch characteristic enhance method thereof

Abstract

The invention discloses a graphene strip heterojunction double-gate TFET and a switch characteristic lifting method thereof. How to increase the on-state current of TFET is an important research direction of TFET. The source region, the drain region and the channel between the source region and the drain region constitute a graphene band heterojunction; The channel consists of the first section and the second section along the direction from the source area to the drain area. The source region, the second channel region and the drain region are all armchair graphene nanoribbons. The stretchingdirection of the first segment of the channel is at an angle to the stretching direction of the armchair graphene nano band. At the close state, the first section of the channel is a band gap armchair graphene nano band along the length direction of the device, and the density of regional states is 0, so that the close state current is restrained; and at the close state, the first section of thechannel is a band gap armchair graphene nano band along the length direction of the device, and the density of regional states is 0; In the open state, there is a current in the channel, the first section of the channel is a sawtooth graphene band along the current transmission direction, and there is no band gap in the first section of the channel, which promotes the quantum tunneling effect between the source region and the channel, and enhances the open state current.

Description

technical field [0001] The invention belongs to the technical field of field effect transistors, and proposes a method for using a graphene heterojunction as a conductive channel of a tunneling field effect transistor (TFET) to improve the switching characteristics of the TFET. Background technique [0002] Since the invention of the IC, the Metal Oxide Field Effect Transistor (MOSFET) has been the most popular semiconductor device in the IC, and the feature size of the device has been shrinking according to the prediction of Moore's Law. With the continuous development of device miniaturization, a series of negative effects such as the "short channel effect" of MOSFET due to the shortened channel length have seriously affected the performance of MOSFET devices; The limitation of channel current and working principle leads to the fact that the sub-threshold swing of the MOSFET device cannot be lower than 60meV / dec, and the power consumption of the device is large, which also...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a graphene strip heterojunction double-gate TFET for the problem of small open-state current of the existing TFET device, and to provide a method for improving the switching characteristics of the double-gate TFET by using the graphene strip heterojunction method, this method utilizes the high electron mobility of graphene strips (GNR), and the bandgap size is regulated by the strip width and edge shape. GNRs with different edge shapes are used to form a heterojunction structure as the conductive channel of TFET. By adjusting the heterojunction shape and edge structure to control the quantum tunneling effect of electrons in the channel, it can improve the electrical performance of TFET

Images