Graphene strip heterojunction double-gate tfet and its switching characteristic improvement method

Abstract

The invention discloses a graphene strip heterojunction double-gate TFET and a method for improving switching characteristics thereof. How to improve the on-state current of TFET is an important direction of TFET research. The source region, the drain region and the channel between the source region and the drain region of the present invention form a graphene strip heterojunction; the channel is composed of a first channel section and a second channel section arranged along the direction from the source region to the drain region ; The source region, the second section of the channel and the drain area are all armchair graphene nano-strips; the extending direction of the strips of the first channel and the extending direction of the armchair graphene nano-strips form an included angle. In the off state of the present invention, a section of the channel is a bandgap armchair graphene nano-strip along the length direction of the device, and the regional density of states is 0, which plays a role in suppressing the off-state current; in the on state, there is Current, one section of the channel is a zigzag graphene strip along the direction of current transmission, and there is no band gap in one section of the channel, which promotes the quantum tunneling effect of electrons between the source region and the channel, and increases the on-state current.

Description

technical field [0001] The invention belongs to the technical field of field effect transistors, and proposes a method for using a graphene heterojunction as a conductive channel of a tunneling field effect transistor (TFET) to improve the switching characteristics of the TFET. Background technique [0002] Since the invention of the IC, the Metal Oxide Field Effect Transistor (MOSFET) has been the most popular semiconductor device in the IC, and the feature size of the device has been shrinking according to the prediction of Moore's Law. With the continuous development of device miniaturization, a series of negative effects such as the "short channel effect" of MOSFET due to the shortened channel length have seriously affected the performance of MOSFET devices; The limitation of channel current and working principle leads to the fact that the sub-threshold swing of the MOSFET device cannot be lower than 60meV / dec, and the power consumption of the device is large, which also...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a graphene strip heterojunction double-gate TFET for the problem of small open-state current of the existing TFET device, and to provide a method for improving the switching characteristics of the double-gate TFET by using the graphene strip heterojunction method, this method utilizes the high electron mobility of graphene strips (GNR), and the bandgap size is regulated by the strip width and edge shape. GNRs with different edge shapes are used to form a heterojunction structure as the conductive channel of TFET. By adjusting the heterojunction shape and edge structure to control the quantum tunneling effect of electrons in the channel, it can improve the electrical performance of TFET

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