High-luminous efficiency light emitting diode epitaxial slice and preparation method thereof
A technology of light-emitting diodes and high luminous efficiency, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of the decrease of luminous efficiency of LED chips and the degree of electronic leakage
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[0028] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0029] figure 1 It is a schematic structural diagram of a high-luminous-efficiency light-emitting diode epitaxial wafer provided by an embodiment of the present invention, which is suitable for GaN-based LEDs with blue-green light waves, see figure 1 , the high luminous efficiency light-emitting diode epitaxial wafer includes: a substrate 100, and a u-type GaN layer 101, an N-type GaN layer 102, a multi-quantum well active layer 103, a P-type AlGaN layer 104, As well as the P-type GaN carrier layer 105 , the multi-quantum well active layer 103 includes: a plurality of InGaN well layers 113 and a plurality of GaN barrier layers 123 grown alternately.
[0030] Wherein, the P-type AlGaN layer 104 includes a first P-type AlGaN sub-layer 1...
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