72results about How to "Reduce potential energy" patented technology

A voltage-isolating passageway for providing high voltage isolation between a component maintained at high DC voltage and a component maintained at a substantially lower voltage is described. The voltage-isolating passageway incorporates a transverse magnetic field across its passageway, which reduces the potential energy of charged particles (e.g., electrons) passing through the passageway. The reduction in electron potential energy reduces the energy of collisions between electrons and molecules and therefore reducing the likelihood of avalanche ionization. The voltage-isolating passageway includes a passageway and at least two magnets. The passageway has two openings and the two magnets are positioned along opposite and exterior surfaces of the passageway wherein the first and second magnets impose a magnetic field in a transverse direction with respect to a lengthwise axis of the passageway. In addition, a semi-conductive coating can be applied to the interior passageway surface to help remove potential energy from the gas that comes in direct contact with the coating.

The invention discloses a light-emitting diode epitaxial wafer with high luminous efficiency and a preparation method thereof, belonging to the field of light-emitting diodes. The high-luminous-efficiency light-emitting diode epitaxial wafer includes: a substrate, and a u-type GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN layer, and a P-type GaN carrier layer covering the substrate in sequence , the multi-quantum well active layer includes a plurality of InGaN well layers and a plurality of GaN barrier layers grown alternately; the P-type AlGaN layer includes the first P-type AlGaN sublayer, u-type GaN sublayer and the second P-type AlGaN sublayer. It can not only reduce the potential energy required for holes in the P-type GaN carrier layer to cross the P-type AlGaN layer, but also form a quantum state in the u-type GaN sublayer. The potential energy in the P-type GaN carrier layer is lower than that of crossing the P-type The holes with the potential energy required by the AlGaN layer will tunnel into the u-type GaN sub-layer through the quantum tunneling effect, and then be transported into the quantum wells, increasing the hole concentration injected into the multi-quantum well active layer.

A voltage-isolating passageway for providing high voltage isolation between a component maintained at high DC voltage and a component maintained at a substantially lower voltage is described. The voltage-isolating passageway incorporates a transverse magnetic field across its passageway, which reduces the potential energy of charged particles (e.g., electrons) passing through the passageway. The voltage-isolating passageway includes a passageway and at least two magnets. The passageway has two openings and the two magnets are positioned along opposite and exterior surfaces of the passageway wherein the first and second magnets impose a magnetic field in a transverse direction with respect to a lengthwise axis of the passageway. In one embodiment, each of the passageways have small diameters and transfer gases at small flow rates. A support structure secures the passageways and magnets in position relative to each other and a magnetic shield encases the components to prevent the magnetic field from affecting external components.

The invention discloses an anti-clogging and easy-to-clean integrated preset pumping station, which comprises a pumping station cylinder body, at least one sewage pump is arranged at the bottom of the pumping station cylinder body, and an inner cylinder is vertically arranged in the pumping station cylinder body body, a first sewage holding chamber is provided between the inner cylinder body and the pump station cylinder body, a second sewage storage chamber is provided in the inner cylinder body, and a part of the inner cylinder body far away from the sewage inlet The side is provided with an open groove connecting the first sewage holding chamber and the second sewage holding chamber, and both sides of the opening groove are vertically provided for filtering from the second sewage holding chamber to the first sewage holding chamber. The grid plate of the sewage in the sewage storage cavity, the first sewage storage cavity is provided with a salvage basket matched with the first sewage storage cavity for salvaging the solid waste in the first sewage storage cavity, the present invention It can improve the filtering performance of the pump station for garbage, make it easier to clean the garbage in the pump station, and improve the anti-blocking and anti-damage performance of the pump station.

The invention discloses a pipeline outward discharge type iron chip recovery device which is characterized in that the pipeline outward discharge type iron chip recovery device comprises a two-dimensional bearing and a turning tool; the turning tool is fixed to the two-dimensional bearing, points to a turning piece, and is provided with a turning cutting edge pointing to the turning piece; a cone cylinder is arranged on the two-dimensional bearing; a large-diameter end of the cone cylinder is connected with a chip discharge pipe through a connector; a small-diameter end of the cone cylinder face towards the turning piece; a strip-type hole having the same width as the turning tool is formed in the side wall of the cone cylinder; the turning tool penetrates into the cone cylinder through the strip-type hole; the turning cutting edge stretches out of the small-diameter end of the cone cylinder; an included angle between the turning tool and the axial line of the cone cylinder is 15-60 degrees; the outer wall of the cone cylinder is connected with a side plate; and the side plate is fixed to the two-dimensional bearing. With the adoption of the pipeline outward discharge type iron chip recovery device, metal chips can not fly all over, so that operators can be protected from being injured; the metal chips are separated from a workpiece thoroughly, and can not cut or rub the surface of the workpiece; the potential energy of the metal chips falling to the ground is reduced, so that no injuries can be caused; the metal chips are easy to collect; and the controllability is improved greatly.

The invention discloses a research method for the influence of the gradient change of the base support stiffness on the friction force. The method comprises the following steps: Step 1, establishment of molecular dynamics model. The model system includes a square graphene flake adsorbed by the probe tip of an atomic force microscope and a single-layer graphene substrate supported by a stiffness gradient; step 2, the influence of the stiffness gradient on the average friction of graphene. As the support stiffness increases, the friction energy consumption decreases, and when the stiffness exceeds a certain critical value, the friction force no longer decreases. Step 3. Effect of stiffness gradient on normal load. When the support stiffness is large, the normal deformation of the substrate is small, the distance between the sheet and the substrate is small, and the van der Waals force between layers is large. Step 4. Intrinsic mechanism of the influence of stiffness gradient on friction force. The friction force is jointly caused by the interface potential barrier and the potential gradient caused by the thermal vibration of supporting atoms with different stiffnesses, as well as the boundary barrier caused by the asymmetric deformation of the atoms on both sides of the boundary transition region and the sudden change of the degree of freedom constraint.