Pixel structure of CMOS image senor and forming method thereof

An image sensor and pixel structure technology, applied in the field of image sensors, can solve problems such as affecting image quality, and achieve the effects of improving image quality, high image quality, and reducing afterimages.

Active Publication Date: 2013-11-27
BRIGATES MICROELECTRONICS KUNSHAN
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Problems solved by technology

Since the potential difference gradually decreases with the transmission of photo-generated carriers, when the potential difference is smaller than the potential barrier between the photodiode PD and the floating diffusion region FD

Method used

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  • Pixel structure of CMOS image senor and forming method thereof
  • Pixel structure of CMOS image senor and forming method thereof
  • Pixel structure of CMOS image senor and forming method thereof

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[0036] For the pixel structure of the existing N-type CMOS image sensor, please refer to figure 2 The pixel structure of the CMOS image sensor includes: a P-type semiconductor substrate 101, a transfer transistor 103 located on the P-type semiconductor substrate 101, and the transfer transistor 103 includes a gate structure located on the P-type semiconductor substrate 101; A photodiode in a P-type semiconductor substrate on one side of the gate structure. The photodiode includes an N-type deep doped region 104 in the P-type semiconductor substrate. The N-type deep doped region 104 serves as a P-type photodiode. The semiconductor substrate 101 serves as the anode of the photodiode; an N-type floating diffusion region 105 located in the other side of the P-type semiconductor substrate 101.

[0037] The formation process of the N-type deep doped region 104 of the photodiode is: first, a mask layer is formed on the P-type semiconductor substrate 101 and the gate structure, and the m...

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Abstract

The invention discloses a pixel structure of a CMOS image senor and a forming method thereof. The pixel structure of the CMOS image senor comprises a semiconductor substrate, a transmission transistor located on the semiconductor substrate, a photodiode located inside the portion, at one side of a gate structure, of the semiconductor substrate and a floated diffusion area located inside the portion, at the other side of the gate structure of the semiconductor substrate,, wherein the transmission transistor comprises the gate structure located on the semiconductor substrate, the photodiode comprises a deep doped area, and the concentration distribution of impurity ions doped in the deep doped area decreased along with the increase of the distance between the deep doped area and the gate structure. According to the pixel structure of the CMOS image senor, photoelectrons can be transmitted to the floated diffusion area easily, and the imaging quality is high.

Description

technical field [0001] The invention relates to the field of image sensors, in particular to a pixel structure of a CMOS image sensor and a forming method thereof. Background technique [0002] Image sensors are divided into complementary metal oxide (CMOS) image sensors and charge-coupled device (CCD) image sensors, which are usually used to convert optical signals into corresponding electrical signals. The advantage of the CCD image sensor is that it has high image sensitivity and low noise, but it is difficult to integrate the CCD image sensor with other devices, and the power consumption of the CCD image sensor is relatively high. In contrast, CMOS image sensors have the advantages of simple process, easy integration with other devices, small size, light weight, low power consumption, and low cost. At present, CMOS image sensors have been widely used in still digital cameras, camera phones, digital video cameras, medical imaging devices (such as gastroscopes), and autom...

Claims

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Application Information

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IPC IPC(8): H01L27/146
Inventor 罗文哲王林汪立
Owner BRIGATES MICROELECTRONICS KUNSHAN
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