Fence-type grid-controlled metal-insulator device based on electronic tunneling

A technology of electron tunneling and insulators, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of high reaction probability, etc., and achieve the effects of improving performance, enhancing control ability, and reducing reverse current

Inactive Publication Date: 2011-10-19
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Those whose energy is higher than the potential barrier and whose motion direction is suitable m

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  • Fence-type grid-controlled metal-insulator device based on electronic tunneling
  • Fence-type grid-controlled metal-insulator device based on electronic tunneling
  • Fence-type grid-controlled metal-insulator device based on electronic tunneling

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Embodiment Construction

[0035] An exemplary embodiment of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are enlarged or reduced for convenience of description, and the shown sizes do not represent actual sizes. Although these figures do not fully reflect the actual size of the device, they still completely reflect the mutual positions between the regions and the constituent structures, especially the upper-lower and adjacent relationships between the constituent structures. The representations in the referenced figures are schematic, but this should not be considered as limiting the scope of the invention. Meanwhile, in the following description, the term substrate used can be understood to include the semiconductor substrate being processed, possibly including other thin film layers prepared thereon.

[0036] figure 1 A cross-sectional view of an embodiment of the gate-enclosed gate-contro...

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Abstract

The invention belongs to the technical field of quantum effect device, and particularly relates to a fence-type grid-controlled metal-insulator device based on electronic tunneling. The device comprises a semiconductor substrate, and a source electrode, a drain electrode, a source doping region, a tunneling insulator layer and a metal layer positioned on the semiconductor substrate; an MIS (Management Information System) structure consists of the metal layer, the tunneling insulator layer and the semiconductor substrate; and the device further comprises a grid insulator layer and a grid electrode positioned on the grid insulator layer for surrounding the MIS structure in a circle. In the invention, the fence-type grid-controlled metal-insulator device based on electronic tunneling effect is manufactured with platform technology, and the grid electrode surrounds the metal-insulator structure in a circle for enhancing the control ability of the grid electrode; and simultaneously, proper bias voltage is applied on the fence-type grid-controlled metal-insulator device so as to control the tunneling efficiency, decrease the leakage current and improve the sub-threshold swing amplitude performance.

Description

technical field [0001] The invention belongs to the technical field of quantum effect devices, and in particular relates to a gate-enclosed gate-controlled metal-insulator device based on electron tunneling. Background technique [0002] In recent years, microelectronics technology with silicon integrated circuits as the core has developed rapidly. As one of the important indicators to measure the development of integrated circuits, the degree of integration basically follows Moore's law, that is, the degree of integration of semiconductor chips doubles every 18 months, which requires continuous reduction in the size of devices. In the process of shrinking the characteristic size of semiconductor devices, when the characteristic size of the chip is in the micron scale, the electrons in it are mainly particle in the wave-particle duality. At present, most semiconductor devices only use the particle of electrons; when the chip's When the characteristic size is at the nanomete...

Claims

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Application Information

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IPC IPC(8): H01L29/423H01L29/78H01L21/28H01L21/336
Inventor 林曦王玮王鹏飞孙清清张卫
Owner FUDAN UNIV
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