Quantum-effect device based on MIS (Metal-Insulator-Semiconductor) structure

Abstract

The invention belongs to the technical field of quantum-effect devices, in particular relates to a quantum-effect device based on an MIS (Metal-Insulator-Semiconductor) structure. The quantum-effect device comprises a semiconductor substrate, a source electrode, a drain electrode, a tunneling insulator layer and a metal layer, wherein the source electrode, the drain electrode, the tunneling insulator layer and the metal layer are arranged on the semiconductor substrate; and the metal layer, the tunneling insulator layer and the semiconductor layer form an MIS structure. The quantum-effect device further comprises a grid electrode and a grating type insulator layer, wherein the grid electrode is arranged at one side of the MIS structure, and the grating type insulator layer is arranged between the MIS structure and the grid electrode. According to the quantum-effect device based on the MIS structure, a quantum tunneling effect and a gated diode are integrated together, and a gated metal insulator semiconductor diode based on the quantum tunneling effect is manufactured by using a platform process. A suitable bias voltage is applied to the quantum-effect device so that the tunnelingefficiency of the quantum-effect device can be controlled, a drain current can be reduced to be much smaller than the drain current of a normal diode, and the power dissipation of a chip is reduced.

Description

technical field [0001] The invention belongs to the technical field of quantum effect devices, in particular to a quantum effect device based on a metal-insulator-semiconductor structure. Background technique [0002] In recent years, microelectronics technology with silicon integrated circuits as the core has developed rapidly. As one of the important indicators to measure the development of integrated circuits, the degree of integration basically follows Moore's law, that is, the degree of integration of semiconductor chips doubles every 18 months, which requires continuous reduction in the size of devices. In the process of shrinking the characteristic size of semiconductor devices, when the characteristic size of the chip is in the micron scale, the electrons in it are mainly particle in the wave-particle duality. At present, most semiconductor devices only use the particle of electrons; when the chip's When the characteristic size is at the nanometer scale, especially ...

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Problems solved by technology

Those whose energy is higher than the potential barrier and whose motion direction is suitable may not necessarily react, it can only be said that the probability of reaction is relatively high

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