Graphene/palladium diselenide/silicon heterojunction self-driven photoelectric detector

Abstract

The invention discloses a graphene/palladium diselenide/silicon heterojunction self-driven photoelectric detector, which is applied to the technical field of photoelectric detection. In view of the problem that the existing photoelectric detector is limited by weak light absorption performance of graphene and low in responsivity, a technical scheme as follows is adopted: firstly, an n-type siliconwindow is exposed on an n-type silicon dioxide/silicon substrate through dry etching; a gold/indium electrode is plated near the silicon window, a palladium diselenide microchip is prepared by adopting mechanical stripping, and palladium diselenide is transferred to the silicon window by utilizing a positioning dry method; and finally, graphene is transferred in a wet transfer mode and covers thesurfaces of palladium diselenide and the electrode, palladium diselenide serves as an interface modification layer between graphene and silicon, and a graphene/palladium diselenide/silicon heterojunction is formed by the graphene layer, the palladium diselenide layer and the n-type silicon substrate corresponding to the single silicon window. The device provided by the invention is simple in preparation process, has self-driving performance, and has excellent performances such as relatively high responsivity in a visible-near-infrared light band.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a self-driven photodetector and a preparation method thereof. Background technique [0002] Photodetectors are devices that convert optical signals into electrical signals. Although photodetectors made of traditional three-dimensional materials have good performance and mature manufacturing processes, they also have their shortcomings, such as infrared detectors. HgCdTe needs to work normally in a specific low temperature environment; photoresistors made of cadmium sulfide have a slow response time; silicon photodetectors have a relatively narrow detection bandwidth due to the limitation of silicon itself. Most importantly, detectors made of traditional three-dimensional materials are relatively difficult to integrate due to the severe surface states of three-dimensional materials. The emergence of two-dimensional materials can make up for some shortc...

AI Technical Summary

Problems solved by technology

[0002] Photodetectors are devices that convert optical signals into electrical signals. Although photodetectors made of traditional three-dimensional materials have good performance and mature manufacturing processes, they also have their shortcomings, such as infrared detectors. HgCdTe needs to work normally in a specific low temperature environment; photoresistors made of cadmium sulfide have a slow response time; silicon photodetectors have a relatively narrow detection bandwidth due to the limitation of silicon itself

Most importantly, detectors made of traditional three-dimensional materials are relatively difficult to integrate due to the severe surface states of three-dimensional materials.

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