A graphene/palladium diselenide/silicon heterojunction self-driven photodetector

Abstract

The invention discloses a graphene / palladium diselenide / silicon heterojunction self-driven photodetector, which is applied in the field of photoelectric detection technology. The existing photodetector is limited by the weak light absorption performance of graphene and has low responsivity. problem, the present invention first exposes the n-type silicon window by dry etching on the n-type silicon dioxide / silicon substrate; then coats a gold / indium electrode near the silicon window, and then adopts mechanical stripping to prepare a palladium diselenide microchip , and transfer palladium diselenide to the silicon window by positioning dry method; finally transfer graphene by wet transfer method, covering the surface of palladium diselenide and the electrode, wherein palladium diselenide is used as the interface between graphene and silicon A modification layer, a graphene layer corresponding to a single silicon window, a palladium diselenide layer, and an n-type silicon substrate form a graphene / palladium diselenide / silicon heterojunction; the device preparation process of the present invention is simple, and the device has self-driving , has excellent performance such as high responsivity in the visible-near-infrared light band.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a self-driven photodetector and a preparation method thereof. Background technique [0002] Photodetectors are devices that convert optical signals into electrical signals. Although photodetectors made of traditional three-dimensional materials have good performance and mature manufacturing processes, they also have their shortcomings, such as infrared detectors. HgCdTe needs to work normally in a specific low temperature environment; photoresistors made of cadmium sulfide have a slow response time; silicon photodetectors have a relatively narrow detection bandwidth due to the limitation of silicon itself. Most importantly, detectors made of traditional three-dimensional materials are relatively difficult to integrate due to the severe surface states of three-dimensional materials. The emergence of two-dimensional materials can make up for some shortc...

AI Technical Summary

Problems solved by technology

[0002] Photodetectors are devices that convert optical signals into electrical signals. Although photodetectors made of traditional three-dimensional materials have good performance and mature manufacturing processes, they also have their shortcomings, such as infrared detectors. HgCdTe needs to work normally in a specific low temperature environment; photoresistors made of cadmium sulfide have a slow response time; silicon photodetectors have a relatively narrow detection bandwidth due to the limitation of silicon itself

Most importantly, detectors made of traditional three-dimensional materials are relatively difficult to integrate due to the severe surface states of three-dimensional materials.

Images