High-performance position sensitive detector and preparation method thereof

Abstract

The invention relates to a high-performance position sensitive detector and a preparation method thereof. A single-layer p-type graphene is selected to be combined with an n-type semiconductor layer; a first insulating layer, a repairing layer and a second insulating layer which are sequentially arranged in parallel are inserted between the p-type graphene and the n-type semiconductor layer; the insulating layers block the contact between the n-type semiconductor layer and the single-layer graphene; the repairing layer repairs the defects between the graphene layer and the n-type semiconductor layer; and the first electrode and the second electrode are respectively arranged on the graphene surface on the insulating layer. The formed position sensitive detector has self-driving performance, the maximum light sensitive area can reach 8mm * 8mm, and the position sensitive detector has excellent comprehensive performance. In addition, according to the preparation method provided by the invention, a high-quality repair layer region can be accurately obtained, a large-size light sensitive area is obtained, the overall performance of the device is improved, and the preparation process is simple.

Description

technical field [0001] The invention relates to the field of optoelectronic information technology, in particular to a high-performance position-sensitive detector and a preparation method thereof. Background technique [0002] The position sensitive detector is an important part in the field of optoelectronic information technology. It uses the transverse photoelectric effect to convert optical signals into electrical signals and further into position information. Position-sensitive detectors can accurately measure position, distance, displacement, angle and other related information optically, and play an important role in national defense and life. The current position-sensitive detectors are mainly Si-based P-N or P-I-N structures. However, Si-based position-sensitive detectors generally have relatively low photoresponsivity and poor low-light detection capability. And in order to obtain higher sensitivity, an external voltage is generally required. More importantly, ...

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