43results about How to "Reduce short circuit problems" patented technology

The invention relates to a high-temperature resistant micropore thin film material prepared from inorganic fiber, synthetic fiber, natural organic fiber, nano-grade inorganic powder and an adhesive. The thin film material is a non-woven fabric material prepared through one-step molding with a wet papermaking technology combined with a coating technology. The material has a 3-dimensional network structure and porosity higher than 90%. The high-temperature resistant micropore thin film material has an outstanding high-temperature resistance. Under a temperature of 260 DEG C, excellent dimension and structure stabilities of the material are maintained for a long time. The material has excellent liquid absorbency, excellent liquid retaining capacity, and 3-dimensional stereo pores with good uniformity. An average pore size is 0.02-2.5mum. The high-temperature resistant micropore thin film material can be used as lithium ion power battery separation films, super-capacitor separation films, or filtrating materials.

The invention provides a high-breakdown-strength aramid diaphragm as well as a preparation method and application thereof, and relates to the technical field of diaphragms, the high-breakdown-strength aramid diaphragm comprises a base membrane and an aramid coating arranged on one side or two sides of the base membrane; the outer layer of the aramid fiber coating is of a dense porous structure, and the interior of the aramid fiber coating is of a fibrous porous structure; the added value of the air permeability of the aramid fiber coating of the high-breakdown-strength aramid fiber diaphragm is 20-30 s / 100 cc / mu m, and the breakdown strength of the aramid fiber coating of the high-breakdown-strength aramid fiber diaphragm is 0.24-0.3 kv / mu m. On the basis of not abnormally increasing the air permeability of the aramid fiber coating diaphragm, the breakdown strength of the diaphragm can be improved, and the safety performance is improved.

The invention discloses a polymer composite separator for a lead acid storage battery, and the polymer composite separator comprises the following raw materials by weight: 50-70 parts of polypropylene, 40-60 parts of polyethylene, 5-12 parts of silica, 15-25 parts of maleic anhydride, 1-3 parts of an initiator, 4-8 parts of an additive, 8-15 parts of glass fiber, 10-20 parts of an impregnating compound, 0.8-2 parts of a coupling agent, 1-3 parts of an antioxidant, 2-5 parts of a rare earth material, 10-16 parts of a hydrochloric acid solution and 16-24 parts of a non-ionic surfactant. The polymer composite separator for the lead acid storage battery has the advantages of super-high strength, toughness and permeability resistance, large flexural coefficient, good heat resistance and oxidation resistance, simple preparation method, no high cost equipment investment, low production cost and suitability for industrial production, the polymer composite separator for the lead acid storage battery is used in the lead-acid battery for effectively reducing the short-circuit problem caused by the separator, prolongs the service life of the lead acid storage battery, and widens the application prospect.

The invention provides a display panel and a manufacturing method thereof. The display panel comprises a flexible substrate, a buffer layer, a combined insulating layer, a groove, an organic insulating layer and a first line changing layer. The invention provides a display panel and a manufacturing method thereof. The first line changing layer is disposed on the upper surface of the organic insulating layer and extends to the combined insulating layer. Through holes in the organic insulating layer in the prior art are removed. Therefore, on the other hand, line breakage in the first line changing layer can be reduced; on the other hand, since one side edge line of the first line changing layer is a square waveform, a sawtooth waveform, a triangular waveform, or a sinusoidal waveform, adjacent lines in the first line changing layer can be prevented from being short-circuited, thereby improving the stability of the display panel.

The invention relates to preparation of paint, and aims at providing a preparation method for hydrophobic nanometer modified resin composite paint used for an LED base plate. The method comprises: firstly uniformly dispersing nanometer alpha-Al2O3 and butanol; then adding a silane coupling agent KH560 and ageing, so as to obtain a modified alpha-Al2O3 sol, and performing concentration distillation; uniformly mixing 1H,1H,2H,2H-perfluorooctyltriethoxysilane, n-butanol and formic acid, then adding deionized water, and ageing to obtain a silicon fluoride oligomer sol; and dispersing the former two products, an epoxy resin monomer, 2-butanone, xylene and 2,2,4-trimethyl-1,3-pentanediolmono(2-methylpropanoate), so as to obtain the paint. By introducing alpha-Al2O3 nano-particle into a conventional epoxy resin coating, the heat conductivity of resin is improved, also the excellent coating property and the workability of resin are maximumly kept, and the price is relatively appropriate. The hydrophobicity is substantially improved, and the short circuit problem caused by air moist is reduced. The prepared hydrophobic nanometer modified resin composite paint is suitable for production processing on a conventional production line, and is beneficial improvement on the basis of a conventional epoxy-resin-coated aluminium base plate.

The invention discloses a method for adding a solder resist bridge between narrow IC pads on a thick copper PCB, and belongs to the technical field of printed circuit boards. The method comprises thefollowing steps: manufacturing an outer layer circuit of the PCB; printing a first layer of ink on the surface of the PCB with the outer layer circuit; carrying out exposure and development on the first layer of ink, and exposing places which do not need to be covered with the ink and not reserving the ink between the adjacent IC pads to form first solder resist windowing; printing a second layerof ink on the surface of the PCB with the outer layer circuit; exposing and developing the second layer of ink, forming a solder resist bridge and forming second solder resist windowing, wherein the size of the second solder resist windowing is greater than that of the first solder resist windowing; and baking until the ink is completely cured. The solder resist bridge of a relatively thin thickness is manufactured under the condition that the thick copper wire section can be covered by enough thick solder resist ink so that the solder resist bridge can stand stably in a narrow IC interval andcannot pollute IC pads on two sides; and the problem of solder short circuit caused by excessively narrow IC pads can be reduced so that the yield of SMT assembly is improved.

The invention relates to the preparation of coatings, and aims to provide a method for preparing hydrophobic nano-modified resin composite coatings for LED substrates. The method comprises: first uniformly dispersing nanometer α-Al2O3 and butanol; then adding silane coupling agent KH560 for aging to obtain modified α-Al2O3 sol, concentrated distillation; tridecafluorooctyltriethoxysilane, n- Mix butanol and formic acid, add deionized water, and age to obtain fluorosilane oligomer sol; mix the first two products, epoxy resin monomer, methyl ethyl ketone, xylene and 2,2,4-trimethyl- 1,3‑Pentanediol monoisobutyrate is dispersed to give a coating. The present invention introduces α-Al2O3 nanoparticles into the traditional epoxy resin coating to improve the thermal conductivity of the resin, while retaining the excellent coating and processability of the resin to the greatest extent, and the price is relatively good. The hydrophobic performance is significantly improved, which reduces the problem of short circuits caused by humid air. It is suitable for production and processing on existing production lines, and is a beneficial improvement to traditional epoxy resin-covered aluminum substrates.

The invention is a manufacturing method of a high-potential gracient ZnO thick-film voltage dependent resistor, belonging to the field of voltage dependent resistor manufacture technology, comprising the steps of: successively depositing membranoid substances on a Al2O3 ceramic plate substrate by screen painting process: a bottom electrode, a ZnO voltage dependent resistor body and a top electrode; and sticking a electrode terminal to the end surfaces of the bottom and top electrodes, characterized in: the slurry for manufacturing the ZnO voltage dependent resistor contains rare-earth metal oxide Y2O3; the ZnO voltage dependent resistor body has a thick-film structure, and a multi-layer film is stacked into a thick film by steps of screen painting process. The method has the advantages ofsimple process, operation simplicity, low sintering temperature, low equipment requirements, low manufacturing cost, and the ability of manufacturing high performance ZnO thick-film voltage dependentresistor.

The invention relates to a high-temperature resistant micropore thin film material prepared from inorganic fiber, synthetic fiber, natural organic fiber, nano-grade inorganic powder and an adhesive. The thin film material is a non-woven fabric material prepared through one-step molding with a wet papermaking technology combined with a coating technology. The material has a 3-dimensional network structure and porosity higher than 90%. The high-temperature resistant micropore thin film material has an outstanding high-temperature resistance. Under a temperature of 260 DEG C, excellent dimension and structure stabilities of the material are maintained for a long time. The material has excellent liquid absorbency, excellent liquid retaining capacity, and 3-dimensional stereo pores with good uniformity. An average pore size is 0.02-2.5mum. The high-temperature resistant micropore thin film material can be used as lithium ion power battery separation films, super-capacitor separation films, or filtrating materials.

The invention relates to a clamping type electric heater cover plate. The clamping type electric heater cover plate comprises a display screen and a top cover which are matched with each other, and further comprises a connecting structure which is arranged on the display screen and the top cover and used for connecting the display screen with the top cover, and a waterproof structure which is arranged on the top cover and used for realizing the waterproofing of the interior. By matching a buckle with a buckle groove and matching a groove with a top block, the display screen and the top cover are connected, the connecting effect is good, and detachment is convenient. An inner circle protrudes upwards to form a groove circle which is used for containing a small amount of water stains after water enters and evaporating the water during work, so a small amount of water stains entering an electric heater are dried during work, the internal circuit short-circuit problem caused by the permeation of the water stains is reduced, and safety is improved.

The invention provides an efficient low-resistance separator for high-liquid-content gas-liquid two-phase flow, and belongs to the field of separators. The efficient low-resistance separator for the high-liquid-content air-liquid two-phase flow comprises a gas-liquid two-phase inlet, a gravity sedimentation chamber, a first-stage cyclone tube, a liquid collecting chamber, a liquid collecting chamber draining port, a second-stage cyclone tube, a gas exhausting port, an air exhausting chamber and the like, and is used for gas-liquid separation on high-liquid-content gas. According to the separator, an operation mode that the cyclone tubes at the same stage are connected in parallel and the cyclone tubes at different stages are connected in series is performed in one separator, namely, a plurality of cyclone tubes are connected in parallel to form a stage, and cyclone tubes at two stages are synchronously arranged, so that the separation efficiency is effectively improved while the processing capacity of the device is improved; in addition, the separator can be adapted to the working condition of high-liquid-content gas-liquid two-phase flow; two stages of guide blades connected in series are arranged in each cyclone tube at each stage, so that the separation capacity of the cyclone tubes at each stage can be improved; and meanwhile, the cyclone production synergistic effect between the two-stage guide blades connected in series can be realized, so that the resistance is low, and the requirements on pressure in a following process can be met.

An ultrahigh current density electrolysis or electro-deposition groove comprises a groove body. The groove body is provided with a liquid inlet; a flange is disposed outside the liquid inlet; a panel is disposed on an inner wall of the groove body; a closed cavity is formed by the panel and the inner wall of the groove body; the closed cavity is communicated with the liquid inlet on the groove body; the panel is provided with an electrolyte spraying device and a polar plate limiting device; an anode plate and a cathode plate are placed in the groove body; and a liquid discharging device is disposed on the groove body. In the present invention, a liquid supplying device is formed by the panel, the inner wall of the groove body, and the closed cavity formed by the panel and the inner wall of the groove body. According to the present invention, the liquid supplying device is embedded into the inner wall of the groove body, and a liquid supplying manner in which the bottom of the liquid supplying device is parallel to a polar plate is utilized to ensure an electrolyte circulation requirement of electrolysis or electro-deposition production with an ultrahigh current density; in addition, the polar plate does not contact the liquid supplying device embedded into the inner wall of the groove body, so that the safety of the liquid supplying device is ensured and the production is smoothly and safely operated.

The invention provides a metal interconnection structure, a preparation method thereof and a semiconductor device. The metal interconnection structure comprises a substrate, an etching stop layer and a protection layer which are sequentially arranged in a laminated mode, a contact hole penetrating through the protection layer and the etching stop layer, and a diffusion barrier layer, wherein the contact hole comprises a first part and a second part, the first part penetrates through the protection layer and extends into the etching stop layer, and the second part is arranged in the etching stop layer and is connected with the first part of the contact hole; the inclination angle of the side wall of the first part of the contact hole relative to the bottom of the contact hole is smaller than the inclination angle of the side wall of the second part of the contact hole relative to the bottom of the contact hole; and the diffusion barrier layer covers the side wall and the bottom of the contact hole. The connection part of the first part and the second part of the contact hole is located at the etching stop layer, transition is smooth, a sharp angle cannot be formed, the coverage of the diffusion barrier layer is good, and the short circuit problem between the interconnection structures is greatly reduced.

The invention provides a silicon-based dielectric barrier type one-dimensional nanometer electrode structure, belonging to the micro electric device field. The invention is formed by an upper part silicon-based plate and a lower part silicon-based plate which are bonded, wherein the lower part silicon-based plate is locally provided with a drop-pit structure; the drop-pit is provided inside with a graphical one-dimensional nanometer material film which has the lower part provided with a graphical metal conduction layer. The silicon base dielectric barrier type one-dimensional nanometer electrode structure is applied to electric devices based on gas discharge, which facilitates to the micromation, integration and mass production of the electric devices; moreover, the silicon base dielectric barrier type one-dimensional nanometer electrode structure can avoid the thermal damage of the heat balance plasma to the electrode, which facilitates the improvement the stability and service life of the devices; the dielectric barrier layer can greatly lower the probability of local short circuit, which facilitates the decrease of the clearance between electrodes and ensuring devices work under a lower operating voltage.

The invention discloses a manufacturing method of a low-voltage high-density trench DMOS device, which belongs to the technical field of semiconductor power devices. After the trench array is completed, sacrificial oxidation to repair the damage of the inner surface of the trench array is directly performed without removing the oxide layer. The surface of the polycrystalline silicon in the trencharray is 2000-3000 angstroms higher than the surface of the silicon. And through an oxide layer etching technology, the oxide layer on the surface of the silicon is removed through dry etching, and the residual oxide layer with a certain thickness is taken as a well injection barrier layer. The masking oxide layer in trench array etching is used for raising the height of the polysilicon at the gate lead-out position, so that the polysilicon is prevented from being perforated by hole corrosion, and the product yield and reliability are improved; by optimizing the process, the problem of short circuit of gate polycrystalline silicon perforated through a gate contact hole is reduced, so that the product yield and the reliability are improved.