44results about How to "Reduce short circuit problems" patented technology

The invention provides a display panel and a manufacturing method thereof. The display panel comprises a flexible substrate, a buffer layer, a combined insulating layer, a groove, an organic insulating layer and a first line changing layer. The invention provides a display panel and a manufacturing method thereof. The first line changing layer is disposed on the upper surface of the organic insulating layer and extends to the combined insulating layer. Through holes in the organic insulating layer in the prior art are removed. Therefore, on the other hand, line breakage in the first line changing layer can be reduced; on the other hand, since one side edge line of the first line changing layer is a square waveform, a sawtooth waveform, a triangular waveform, or a sinusoidal waveform, adjacent lines in the first line changing layer can be prevented from being short-circuited, thereby improving the stability of the display panel.

The invention relates to the preparation of coatings, and aims to provide a method for preparing hydrophobic nano-modified resin composite coatings for LED substrates. The method comprises: first uniformly dispersing nanometer α-Al2O3 and butanol; then adding silane coupling agent KH560 for aging to obtain modified α-Al2O3 sol, concentrated distillation; tridecafluorooctyltriethoxysilane, n- Mix butanol and formic acid, add deionized water, and age to obtain fluorosilane oligomer sol; mix the first two products, epoxy resin monomer, methyl ethyl ketone, xylene and 2,2,4-trimethyl- 1,3‑Pentanediol monoisobutyrate is dispersed to give a coating. The present invention introduces α-Al2O3 nanoparticles into the traditional epoxy resin coating to improve the thermal conductivity of the resin, while retaining the excellent coating and processability of the resin to the greatest extent, and the price is relatively good. The hydrophobic performance is significantly improved, which reduces the problem of short circuits caused by humid air. It is suitable for production and processing on existing production lines, and is a beneficial improvement to traditional epoxy resin-covered aluminum substrates.

The invention is a manufacturing method of a high-potential gracient ZnO thick-film voltage dependent resistor, belonging to the field of voltage dependent resistor manufacture technology, comprising the steps of: successively depositing membranoid substances on a Al2O3 ceramic plate substrate by screen painting process: a bottom electrode, a ZnO voltage dependent resistor body and a top electrode; and sticking a electrode terminal to the end surfaces of the bottom and top electrodes, characterized in: the slurry for manufacturing the ZnO voltage dependent resistor contains rare-earth metal oxide Y2O3; the ZnO voltage dependent resistor body has a thick-film structure, and a multi-layer film is stacked into a thick film by steps of screen painting process. The method has the advantages ofsimple process, operation simplicity, low sintering temperature, low equipment requirements, low manufacturing cost, and the ability of manufacturing high performance ZnO thick-film voltage dependentresistor.

An ultrahigh current density electrolysis or electro-deposition groove comprises a groove body. The groove body is provided with a liquid inlet; a flange is disposed outside the liquid inlet; a panel is disposed on an inner wall of the groove body; a closed cavity is formed by the panel and the inner wall of the groove body; the closed cavity is communicated with the liquid inlet on the groove body; the panel is provided with an electrolyte spraying device and a polar plate limiting device; an anode plate and a cathode plate are placed in the groove body; and a liquid discharging device is disposed on the groove body. In the present invention, a liquid supplying device is formed by the panel, the inner wall of the groove body, and the closed cavity formed by the panel and the inner wall of the groove body. According to the present invention, the liquid supplying device is embedded into the inner wall of the groove body, and a liquid supplying manner in which the bottom of the liquid supplying device is parallel to a polar plate is utilized to ensure an electrolyte circulation requirement of electrolysis or electro-deposition production with an ultrahigh current density; in addition, the polar plate does not contact the liquid supplying device embedded into the inner wall of the groove body, so that the safety of the liquid supplying device is ensured and the production is smoothly and safely operated.

The invention provides a silicon-based dielectric barrier type one-dimensional nanometer electrode structure, belonging to the micro electric device field. The invention is formed by an upper part silicon-based plate and a lower part silicon-based plate which are bonded, wherein the lower part silicon-based plate is locally provided with a drop-pit structure; the drop-pit is provided inside with a graphical one-dimensional nanometer material film which has the lower part provided with a graphical metal conduction layer. The silicon base dielectric barrier type one-dimensional nanometer electrode structure is applied to electric devices based on gas discharge, which facilitates to the micromation, integration and mass production of the electric devices; moreover, the silicon base dielectric barrier type one-dimensional nanometer electrode structure can avoid the thermal damage of the heat balance plasma to the electrode, which facilitates the improvement the stability and service life of the devices; the dielectric barrier layer can greatly lower the probability of local short circuit, which facilitates the decrease of the clearance between electrodes and ensuring devices work under a lower operating voltage.