832results about How to "Avoid short circuit problems" patented technology

The disclosure provides an array substrate mother board, an array substrate, a display device, and a manufacturing method thereof, and belongs to the technical field of display. The array substrate mother board has a plurality of array regions. Each of the array regions includes a display region and a signal introduction region. The signal introduction region includes: a binding region adjacent tothe display region; and a switch circuit region including a plurality of switching transistors in a predetermined area between the binding region and a cutting line, wherein the cutting line is a dividing line for cutting adjacent array regions; the control ends of the switching transistors are connected to a control signal line; the first end and the second end of each switching transistor are connected to a test signal line of the bonding region and a test signal line of the adjacent array region, respectively. The array substrate mother board can solve the short circuit of a cutting section caused by cutting in the prior art by using the switching transistors.

The invention discloses a lithium metal electrode, a preparation method thereof, a negative electrode of a lithium metal secondary battery and the battery, and belongs to the technical field of lithium batteries. The lithium metal electrode comprises a foam electrode substrate with a plurality of hole cavities and metal lithium particles distributed in at least one hole cavity of the foam electrode substrate; and the foam electrode substrate is made from a foam metal material or a carbon foam material. The hole cavities of the foam electrode substrate can effectively restrict the volume expansion of the metal lithium particles in the charging and discharging process and reduce the generation of lithium dendrites, so that the stable performance, cycle performance, quick charging performance and safety performance of the lithium metal secondary battery using the lithium metal electrode as the negative electrode are effectively improved.

The invention relates to a bipolar battery used for an electric vehicle, in particular to a bipolar plate lead-acid battery, which solves the problems that battery cells of the traditional bipolar battery cannot be sealed and the bipolar plate does work on a single surface. In the invention, a hydrophobic material is utilized as a substrate, a conductive needle is embedded in the substrate, blanket film layers are added on two surfaces of the substrate, a positive and negative active substance layers are respectively coated outside the blanket film layers to form a bipolar plate, a common air chamber is arranged in the bipolar battery formed by the bipolar plate and provided with a pressure reducing valve. The structure ensures that the battery does not has short circuit and can still work normally when the battery cells in the battery are not in a sealed state, thereby paving a way for commercial application of the bipolar battery; moreover, because the bipolar plate in the battery does work on double surfaces, the bipolar battery capacity is improved by more than 30%, the gravimetric specific energy of the bipolar plate lead-acid battery can exceed 80Wh / kg which approaches to the level of a lithium battery but the cost of the bipolar plate lead-acid battery is less than one quarter of that of a lithium battery; and the bipolar battery can work when the internal pressure of the battery is below 30kPa, and is sealed and environmentally-friendly in use. The invention provides the bipolar plate capable of doing work on double surfaces and a high energy battery thereof.

The invention discloses a display panel and a display device in order to better protect a metal wire connecting area in the peripheral wire area, improve protection strength and prevent a wire from being broken. The display panel comprises a grid insulation layer arranged on a grid metal layer, a protective layer, a passivation layer and an ITO covering layer, wherein the protective layer, the passivation layer and the ITO covering layer are sequentially arranged on the grid insulation layer. By means of the display panel and the display device, the thickness of a film layer in the peripheral wire area can be increased, and therefore the whole peripheral wire area especially the metal connecting wire area exposed outside a color film panel can be protected, and protection strength is improved.

The invention discloses a pump-free lithium ion flow battery and belongs to the field of a chemical energy-storing battery. The pump-free lithium ion flow battery comprises a plurality of battery subsystems, an anode liquid preparation tank, a cathode liquid preparation tank, an anode liquid collection tank, a cathode liquid collection tank, an anode conveying tank and a cathode conveying tank. An electrode suspension solution is pushed by gravity and inert gas pressure to circularly flow, so as to avoid using a pump. The pump-free lithium ion flow battery has the advantages of simplicity in operation and convenience for controlling, reduces mechanical loss of a battery system and improves the whole efficiency and the safe use performance of the battery.

The invention provides an electroluminescent display with an organic and inorganic mixed luminescent layer suitable for the technical field of panel display. The display comprises a TFT array backboard, the TFT array backboard is provided with a first electrode, and the first electrode is connected with a source or drain electrode of the TFT array backboard; the first electrode is provided with a pixel defining layer, the pixel defining layer comprises multiple pixel units, the pixel units comprise three sub pixel pits isolated from one another, and the sub pixel pits are placed on the first electrode so that part of the first electrode is exposed out of the pixel defining layer; the part, exposed out of the pixel defining layer, of the first electrode is provided with the organic and inorganic mixed luminescent layer which comprises a red light quantum dot luminescent layer, a green light quantum dot luminescent layer and a blue light organic luminescent layer; and a second electrode is arranged on the organic and inorganic mixed luminescent layer.

The invention relates to a high-temperature resistant micropore thin film material prepared from inorganic fiber, synthetic fiber, natural organic fiber, nano-grade inorganic powder and an adhesive. The thin film material is a non-woven fabric material prepared through one-step molding with a wet papermaking technology combined with a coating technology. The material has a 3-dimensional network structure and porosity higher than 90%. The high-temperature resistant micropore thin film material has an outstanding high-temperature resistance. Under a temperature of 260 DEG C, excellent dimension and structure stabilities of the material are maintained for a long time. The material has excellent liquid absorbency, excellent liquid retaining capacity, and 3-dimensional stereo pores with good uniformity. An average pore size is 0.02-2.5mum. The high-temperature resistant micropore thin film material can be used as lithium ion power battery separation films, super-capacitor separation films, or filtrating materials.

The invention relates to an underground temperature measurement system. The system comprises a thermocouple, a compensating lead and a heavy hammer, wherein the compensating lead is positioned above the thermocouple, and the lower end of the compensating lead is connected with the upper end of the thermocouple; the heavy hammer is positioned below the thermocouple, connected with the lower end of the thermocouple and used for guiding the thermocouple to advance in a temperature measurement passage; and the thermocouple is a sheathed thermocouple manufactured by combined assembly of a thermocouple wire, an insulating material and a metal protective sleeve and stretching, and the length of the sheathed thermocouple corresponds to the thickness of a highest temperature interval in an underground high temperature layer to be measured. The temperature measurement system can greatly reduce the manufacturing cost of the thermocouple, effectively prolong the service life of the thermocouple and improve the automation degree of temperature measurement, and is convenient for repair and maintenance of the system per se.

The invention discloses a heat recovery steam generator flue gas denitration apparatus, which belongs to the industrial tail gas purification equipment field. The apparatus comprises an evaporator provided in the heat recovery steam generator, a multistage heating surface is provided along a flue gas flow channel, the temperature is gradually reduced along the flue gas direction, the apparatus also comprises a denitration reactor, a reducing agent injection system and a preparation system for providing a reducing agent to the reducing agent injection system, a catalyst is provided in the reactor, the denitration reactor is arranged between adjacent two stages heating surfaces of the evaporator, the temperature in two stages heating surfaces is the optimum reaction temperature for catalyst denitration, the reducing agent injection system uniformly injects the reducing agent through the section of the flue gas flow channel, and is arranged on the upstream of the denitration reactor along the flue gas flow direction and possesses several stages heating surfaces to the denitration reactor. According to the invention, the problem of NOx discharge in flue gas of a gas turbine combined cycle unit and an industrial exhaust-heat boiler can be solved, and the SCR denitration requirements with low dust, low NOx concentration and high denitration efficiency can be solved.

The invention provides an array substrate, a manufacturing method of the array substrate and a display device. The manufacturing method includes the steps that photoresist is coated to an insulating layer covering a conductive pattern or a semiconductor pattern; exposing is carried out to at least form a photoresist partial reserving area and a photoresist complete removing area; etching is carried out to at least partially remove the portion, corresponding to the photoresist complete removing area, of the insulating layer so as to form a middle hole; etching is carried out again to form a first via hole, a second via hole is formed in the position of the middle hole, and the portions, where the first via hole and the second via hole are formed, of the conductive pattern or the semiconductor pattern are exposed, wherein the depth of the first via hole is smaller than the depth of the second via hole. By means of the array substrate, the manufacturing method of the array substrate and the display device, on the premise that the number of times of composition processes of the array substrate is not increased, the condition that when a shallow hole and a deep hole are etched at the same time, an oxide semiconductor layer and a gate insulating layer at the position of the shallow hole are punctured through etching due to long-time etching, so that a single line and a gate line are in short circuit is avoided.

The invention discloses a narrow frame one-chip type capacitor inducting touch screen and a manufacturing method thereof. The narrow frame one-chip type capacitor inducting touch screen comprises a substrate, a plurality of touch control units, a color layer, a plurality of electrodes, a plurality of touch control unit wires, a plurality of electrode wires and a plurality of electric conductors, wherein an array of the touch control units is formed by the touch control units; the color layer is used for forming a non-visual area of the capacitor touch screen and is provided with a plurality of through holes; the electrode wires and the touch control unit wires are electrically connected in the corresponding through holes through the corresponding electric conductors. According to the narrow frame one-chip type capacitor inducting touch screen, the electric conductors can completely cover the through holes, and therefore the light leakage problem caused by the through holes can be avoided. The electric conductors and the electrode wires are arranged in a staggered mode, more electrode wires can be arranged in a frame with a certain width, and therefore the requirement for the narrow frame of the capacitor screen can be met.

The invention discloses a method for treating nickel-containing electroplating wastewater and recovering nickel by electrolysis. The method has the characteristics of simple process, no secondary pollution, high removal rate and recyclable deposited metallic nickel. The nickel-containing electroplating wastewater is subjected to electrolysis treatment by an electrolysis treatment nickel-containing electroplating wastewater device, which comprises an electrolytic bath and an electrolyte stirring apparatus, wherein the anode adopts a titanium-based platinum electrode; the cathode adopts a nickel electrode or a graphite electrode; and a pH meter is arranged in the electrolytic bath. The method for treating the nickel-containing electroplating wastewater by electrolysis comprises the following steps: before the electrolysis treatment, putting the nickel-containing electroplating wastewater serving as an electrolyte into the electrolytic bath, and adding alkali solution into the electrolyte to adjust the pH value of the electroplating wastewater; and adding the aqueous alkali into the electrolyte during the electroplating to adjust the pH value of the electrolyte to between 6.0 to 9.0, and recycling the nickel precipitated from a negative plate by measuring the charge accumulation amount of the electrolyte.

The invention relates to a high-current Type C socket, which comprises a metal medium plate, a first terminal group, a second terminal group and an insulating body, wherein the metal medium plate is provided with a main body portion, the first terminal group and the second terminal group are respectively located at the upper side and the lower side of the metal medium plate in a symmetrical manner, and the first terminal group, the second terminal group and the metal medium plate are molded into an integral whole by the insulating body. The first terminal group and the second terminal group respectively comprise two first grounding terminals, two second grounding terminals, a plurality of first signal terminals, two first power supply terminals, a plurality of second signal terminals and two second power supply terminals, wherein the two first grounding terminals and the two second grounding terminals are located at the outmost side, the plurality of first signal terminals and the two first power supply terminals are located between the two first grounding terminals, the plurality of second signal terminals and the two second power supply terminals are located between the two second grounding terminals, the thickness of the first power supply terminals and the second power supply terminals is greater than the thickness of the first signal terminals and the second signal terminals, and the main body portion of the metal medium plate is provided with strip-shaped holes at the positions corresponding to the first power supply terminals and the second power supply terminals. The high-current USB Type C socket can effectively support high-current charging.

The embodiment of the invention provides a TFT, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device. The TFT, the TFT array substrate, the manufacturing method of the TFT array substrate and the display device solve the problem that a grid insulation layer is prone to breakdown in terms of the structure of an existing bottom grid type TFT array substrate. A source electrode of the TFT comprises a first source electrode part, a drain electrode of the TFT comprises a first drain electrode part, the first source electrode part, the first drain electrode part and an active layer of the TFT are arranged on the same layer, and the first source electrode part and the first drain electrode part are located on the two sides of the active layer respectively and make direct contact with the active layer respectively. Because the first source electrode part and a grid electrode are not overlapped or very slightly overlapped and the first drain electrode part and the grid electrode are not overlapped or very slightly overlapped, capacitors will not be formed generally, and the phenomenon that the grid insulation layer is subjected to breakdown because the voltage of the source electrode or the voltage of the drain electrode is too large or the number of electrostatic charges gathering on the source / drain electrode is too large is avoided.

The invention relates to a method for preparing an integrated quasi-solid zinc ion battery and relates to the technical field of batteries. The method is characterized by using a hydrogel as a substrate, and embedding the positive electrode material and the negative electrode material of the zinc ion battery in the hydrogel substrate to realize the integrated structure of the battery, thereby avoiding the problems such as interfaces, compatibility and short circuits caused by the layered assembly of the positive electrode, the diaphragm and the negative electrode of a traditional battery. Themethod uses the hydrogel as the gel electrolyte of the zinc ion battery, embeds the flexible zinc negative electrode prepared by electro-deposition, and then chemically polymerizes a polymer materialin situ on the surface of the gel electrolyte as a positive electrode. The integrated quasi-solid zinc ion battery with a customized shape can effectively reduce the interface impedance inside the battery and promotes the rapid transmission of electrolyte ions inside the electrode. The most important thing is that such design can provide more positive electrode material loading area for the battery, which greatly increases the energy density of the battery. The invention is used in the field of batteries.

The invention discloses a manufacturing method for interconnected through holes in wafer level chip size packaging. The method comprises the steps of removing stopping materials on a welding pad by the etching method; paving photoresist in the whole opening and on the rear surface of a substrate so as to form a photoresist layer; exposing and developing to remove the photoresist layer above the welding pad; removing a dielectric layer above the welding pad by the dry etching method. The method is simple and easy to be carried out; in addition, the dielectric layer on the welding pad is removed by dry etching, and thus problem that the upper dielectric layer on the welding pad is not etched but is completely removed, and an insulating layer on the rear surface of a wafer is etched to be thin or completely used to lead to short circuit of a line can be avoided. With the adoption of the method, the process of forming silicon through hole interconnection by the etching method can be simplified; the wafer level chip size packaging is simplified; therefore, the packaging efficiency is increased, and meanwhile, the packaging reliability is improved.

The invention discloses a linear secure high-energy-density supercapacitor and a preparation method thereof. The method comprises the following steps of 1) respectively taking two conducting fibers which are in core-shell structures as the anode and the cathode of the linear supercapacitor and twisting the two conducting fibers together to form the intertwisted anode and cathode; 2) coating gel electrolyte onto the surface of the anode and cathode and curing the gel electrolyte to form a gel electrolyte layer; 3) connecting the intertwisted anode and cathode coated with the gel electrolyte layer with lead wires respectively through conductive adhesive bonding or tin scolding methods. The preparation method is simple and is low in cost, strong in applicability, and suitable for large-scale industrial production. The produced linear supercapacitor is characterized by lightweight, security, high energy density, good flexibility, intertwining capability, and the like. The produced linear supercapacitor is applicable to flexible energy storage devices, lightweight portable electronic devices, military-use electronic clothes, and other fields.

The invention discloses a pressing method for a sandwich aluminum-base printed circuit board. The pressing method comprises the following steps of: S1, drilling a through hole in an aluminum substrate and filling the through hole with resin; S2, performing wire drawing treatment on upper and lower surfaces of the aluminum substrate to form wavelike circuits; S3, attaching semi-cured sheets to the upper and lower surfaces of the aluminum substrate and then covering the semi-cured sheets with a copper foil layer; and S4, pressing the aluminum substrate to which the semi-cured sheets are attached and which is covered by the copper foil layers to prepare the sandwich aluminum-base printed circuit board. According to the pressing method, the wire drawing treatment is performed on the upper and lower surfaces of the aluminum substrate to enhance the binding force of the semi-cured sheets and the upper and lower surfaces of the aluminum substrate; temperature and pressure in a pressing process are controlled, so that the surfaces of the entire aluminum substrate can be filled better by the semi-cured sheets; and the resin is filled in the through hole in the aluminum substrate, and an in-hole hole is drilled in the sandwich aluminum-base printed circuit board after pressing, so that connection of lines between the upper and lower copper foils is realized, and the problem of short circuiting due to conduction of an outer layer circuit and the aluminum substrate caused by resin cavitation in the through hole of the aluminum substrate is solved.

The invention provides a magnetic-coupling resonant wireless power transmission system and method. The system comprises a transmitting device and a receiving device. The transmitting device comprises a transmitting terminal LC (inductor-capacitor) resonant network, a power supply and a self-resonant control circuit; the power supply charges the transmitting terminal LC resonant network; after the self-resonant control circuit is charged, the power supply is disconnected; the transmitting terminal LC resonant network automatically resonates and oscillates under inherent self-frequency; a resonant coil in the transmitting terminal LC resonant network transmits energy out in a form of electromagnetic wave; the receiving device comprises a receiving terminal LC resonant network and an adaptive regulating circuit; a resonant coil in the receiving terminal LC resonant network senses the electromagnetic wave and generates resonant oscillation; the adaptive regulating circuit allows the receiving terminal LC resonant network and the transmitting terminal LC resonant network to generate magnetic-coupling resonance by regulating the inherent frequency of the receiving terminal LC resonant network. The problems such that in the traditional wireless power transmission scheme, high-frequency control is difficult and adaptability is poor are solved.

The invention discloses a folding-resistant one-dimensional fibrous flexible energy storage device and a preparation method thereof. The preparation method comprises the following steps: at least by adopting an electrostatic spinning mode or a 3D printing mode, a first nano-fiber membrane used as a diaphragm on a surface of a first electrode in situ is formed, and the first nano-fiber membrane isused to wrap the first electrode; and the first electrode provided with the diaphragm in a wrapped way is assembled and combined with matched electrolyte and a second electrode to form the flexible energy storage device. According to the invention, the nano-fiber membrane is wrapped on the electrode of the flexible energy storage device in situ by adopting the electrostatic spinning way, the 3D printing way, and so on, so that the structure and the composition height of the membrane are controllable, and the membrane has very strong adsorbability and high flexibility; and especially, after theflexible energy storage device is repeatedly folded, the membrane can still be tightly combined with the electrode, so that the problem of short circuit caused by mutual contact of the electrodes canbe prevented, and the folding resistance and the electrochemical stability of the flexible energy storage device are greatly improved.

The present invention relates to an etching method of double magnetic tunnel junctions. The etching method of double magnetic tunnel junctions comprises the following steps: a hard template and a hard template buffer layer with required shapes are prepared through the photolithography at the portion requiring the maintenance of double magnetic tunnel junction stack; etching begins from a top electrode according to the shape of the hard template, etching the portion requiring etching is performed from the top electrode, the top electrode, a first antiferromagnetic layer and a first pinning layer are etched in turn, etching stops when reaching a first tunneling layer, and a first insulation layer is deposited; etching goes on from a free layer to a second tunneling layer and then stops, and a second insulation layer is deposited; and a second pinning layer and a second antiferromagnetic layer are etched until up to a bottom electrode, and finally residual hard template and hard template buffer layer are etched to obtain a final shape. Through adoption of a second insulation layer and a second insulation layer, the problems the short circuit is easy to happen during processing a double magnetic tunnel junctions and the like; and moreover, the double magnetic tunnel junction stack prepared by the etching method provided by the invention is not reliable to the occurrence of a short circuit phenomenon and is able to process and prepare an MRAM on the basis of the double magnetic tunnel junction stack.

The invention relates to the technical field of three-dimensional ultrasonic imaging and discloses a two-dimensional array ultrasonic transducer based on the three-dimensional ultrasonic imaging and a preparation method for the same. The two-dimensional array ultrasonic transducer comprises an insulated resin frame, an electric-conduction backer board, a piezoelectric plate and a printing circuit board, wherein N*N hollow channels filled with an electric-conduction adhesive are formed in the insulated resin frame; the electric-conduction backer board is disposed on the insulated resin frame; the piezoelectric plate is located on the electric-conduction backer board and comprises N*N piezoelectric array elements; and N*N array row pins which are correspondingly disposed in the N*N hollow channels respectively are disposed on the printing circuit board. By the electric-conduction adhesive, the piezoelectric array elements are electrically connected to the array row pins, so that the problem in complex wiring technologies of the array elements of the two-dimensional ultrasonic transducer is solved, and preparation cost is reduced. Meanwhile, the short-circuited problem happening when an interval between every two piezoelectric array elements is too small during wiring is avoided. In addition, the electric-conduction backer board can absorb useless sound waves on the back face of the piezoelectric plate, so that quality of the two-dimensional array ultrasonic transducer can be improved greatly.

The invention relates to the technical field of electromagnetic shielding materials, and in particular relates to an insulating polymer based electromagnetic shielding material and a preparation method thereof. The shielding material provided by the invention is of a multi-layer structure with five to seven layers, wherein the middle layer is a reflecting type shielding layer; a secondary outer layer consists of one or two wave-absorbing type shielding layers; the outermost layers are insulating layers. The wave-absorbing type shielding layers are in special functional distribution by controlling the thickness of each functional layer and filling different conductive filling materials into different layers with the combination of the curtain coating layering of the wave-absorbing type shielding layers, and the overall electromagnetic shielding property of the material can be conveniently adjusted. Due to design and construction of the insulating layers on two sides of the material, the defect that the insulation property is affected as the surface of the material is conductive is avoided. The insulating polymer based electromagnetic shielding material provided by the invention can be applied to the fields such as electronic appliances, microelectronic devices and chemical products which require that the material is insulating and has the electromagnetic shielding function.

The invention discloses a printed pixel bank structure and a preparation method thereof. The pixel bank structure comprises a substrate, a pixel electrode and a pixel bank, wherein the substrate, the pixel electrode and the pixel bank are successively arranged from bottom to top. The pixel bank is obtained through stacking at least three bank layers. The lyophobicity of at least three bank layers gradually increases from bottom to top, and lyophily gradually reduces from bottom to top. According to the printed pixel bank structure, the pixel bank is formed through stacking at least three bank layers with different lyophily and different lyophobicity. Through designing the multiple bank layers, a plurality of boundaries with different lyophily and different lyophobicity can be formed, thereby forming pinning points at different positions for different kinds of ink, and effectively controlling uniformity of different printing film layers.

The invention discloses a diaphragm for a lithium ion battery and the lithium ion battery applying the diaphragm. The diaphragm is a ceramic fiber diaphragm and comprises ceramic fiber, inorganic fillers and inorganic adhesive and / or organic adhesive. The diaphragm for the lithium ion battery has the advantages that the performance is stable and reliable, the short-circuited problem of the battery due to melting of the diaphragm of an electrode can be solved, the safety accidents can be avoided, the safety performance is good, the long-time normal use of the lithium ion battery is guaranteed, and the service life of the lithium ion battery is prolonged, so that the diaphragm is wide in market application prospect and great in production and practice significance.

The disclosed electric carrier plate comprises: a main body, at least two welding mats set on body surface in pairs, a protective layer covering body surface and forming an opening opposite to the mat position, wherein there are at least two same side walls on the opening to expose the mats, the first one is set vertically to the mat arrangement direction, while the second one is parallel. This invention can avoid different area of exposed mats, prevents electric element standing on the plate, fills insulation material between element and plate efficiently, and overcomes problem that it cannot form flow-in groove for package resin on small-size passive element bottom.

The invention provides a semiconductor device and manufacturing method thereof. The method includes providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; forming epitaxial substrate layers on the semiconductor substrate at both sides of the gate structure; forming hard mask side wall layers on side walls of the gate structure; using the hard mask side wall layers as masks, etching the epitaxial substrate layers and the semiconductor substrate, and forming trenches at both sides of the gate structure; and forming stress layers in the trenches. According to the method provided by the invention, the epitaxial substrate layers serve as a part of a PMOS device substrate, so that the PMOS device substrate is lifted and the lifted height of the substrate can be controlled through adjustment of the thickness of the epitaxial substrate layers, thereby ensuring that loss of an oxidation layer close to the bottom of the gate by an etching process for forming the trenches is reduced while pressure stress is applied to a PMOS channel region to improve the hole mobility, thereby avoiding the problem of a short circuit between the gate structure and source and drain regions, and improving the performance of a semiconductor device.