The invention discloses a
regulator for regulating a
polyurethane polishing pad and a chemical mechanical
polishing system, and belongs to the technical field of
semiconductor manufacturing CMP. The
regulator comprises a
titanium alloy base material, and the working surface of the
titanium alloy base material is divided into a coarse regulation area, a fine regulation area and a guide and
discharge area which are arranged in a step shape in the radial direction to form a
radial gradient pressure regulation structure. The coarse adjustment area is provided with an elastic buffer layer and coarse
abrasive particles and is used for pressure equalizing and macroscopic finishing; fine
abrasive particles are embedded in the fine adjustment area at a specific inclination angle to form a multidirectional
cutting edge which is used for adapting to the elasticity of the pad and maintaining the
microstructure; the guide and
discharge area is provided with a spiral
slurry guide groove and nano bulges on the inner wall of the groove to synergistically realize rapid
slurry discharge and deep cleaning of pores; the surface of the
regulator is covered with a temperature-sensitive self-adaptive
coating, the
hardness of the regulator changes along with the temperature to be matched with the temperature change characteristic of the
polishing pad, and an active heat dissipation channel is integrated in the base material. According to the
system, the problems of uneven abrasion, pore blockage,
abrasive particle falling and thermal mismatch of the
polyurethane pad are solved, the
wafer grinding flatness is remarkably improved, the scratch rate is reduced, and the service life of the polishing pad and the service life of a regulator are prolonged.