Thin film transistor (TFT) array substrate fabrication method, TFT array substrate and display device

一种阵列基板、制作方法的技术,应用在显示领域,能够解决降低显示品质、影响显示效果、TFT阵列基板轨迹不均等问题,达到提高显示效果、简化工艺、避免暗点连续现象的效果

Active Publication Date: 2014-07-16
XIAMEN TIANMA MICRO ELECTRONICS +1
View PDF4 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In actual use, it is found that the TFT array substrate has trace mura phenomenon, which affects the display effect and reduces the display quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor (TFT) array substrate fabrication method, TFT array substrate and display device
  • Thin film transistor (TFT) array substrate fabrication method, TFT array substrate and display device
  • Thin film transistor (TFT) array substrate fabrication method, TFT array substrate and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific implementation methods. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content.

[0014] Embodiments of the present invention are not limited to TFT array substrates based on Low Temperature Poly-silicon (LTPS), nor are embodiments of the present invention limited to thin-film transistors (TFTs) using top-gate or bottom-gate structures. Embodiments of the present invention Embodiments of the present invention can be applied to display devices such as organic light emitting displays (Organic Light Emitting Display, OLED), liquid crystal display devices, and electro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a TFT array substrate fabrication method, a TFT array substrate and a display device. The method comprises forming an organic membrane layer on a substrate, and forming a first transparent conducting layer on the organic membrane layer; forming photoresist with an opening on the first transparent conducting layer; performing patterning on the first transparent conducting layer and the organic membrane layer with the photoresist serving as a mask to form a first via hole and a second via hole, wherein the first via hole penetrates the first transparent conducting layer, the second via hole penetrates the organic membrane layer, and the opening position is corresponding to the positions of the first via hole and the second via hole which are communicated. According to the fabrication method, the TFT array substrate and the display device, accurate alignment of the first via hole and the second via hole can be at least achieved with the photoresist serving as the mask together, the short circuit between the first transparent conducting layer and a pixel electrode is effectively prevented, the dark spot continuity is prevented, the display panel quality is guaranteed, the yield is improved, the process is simplified, and the production cost is saved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a manufacturing method of a TFT array substrate, a TFT array substrate and a display device. Background technique [0002] With the development of display device manufacturing technology, display devices including thin film transistor (thin film transistor, TFT) array substrates occupy a major position in the current display device market due to their advantages of small size, low power consumption, and high resolution. status. [0003] In actual use, it is found that the TFT array substrate has trace mura phenomenon, which affects the display effect and reduces the display quality. Contents of the invention [0004] In view of this, the present invention provides a manufacturing method of a TFT array substrate, a TFT array substrate and a display device. [0005] The invention provides a method for manufacturing a TFT array substrate, comprising: forming an organic ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1244H01L27/1259H01L27/1288H01L27/124H01L21/76805H01L21/76877
Inventor 吴昊
Owner XIAMEN TIANMA MICRO ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products