Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and manufacturing method thereof. The method includes providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; forming epitaxial substrate layers on the semiconductor substrate at both sides of the gate structure; forming hard mask side wall layers on side walls of the gate structure; using the hard mask side wall layers as masks, etching the epitaxial substrate layers and the semiconductor substrate, and forming trenches at both sides of the gate structure; and forming stress layers in the trenches. According to the method provided by the invention, the epitaxial substrate layers serve as a part of a PMOS device substrate, so that the PMOS device substrate is lifted and the lifted height of the substrate can be controlled through adjustment of the thickness of the epitaxial substrate layers, thereby ensuring that loss of an oxidation layer close to the bottom of the gate by an etching process for forming the trenches is reduced while pressure stress is applied to a PMOS channel region to improve the hole mobility, thereby avoiding the problem of a short circuit between the gate structure and source and drain regions, and improving the performance of a semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In semiconductor manufacturing, with the development trend of ultra-large-scale integrated circuits, the feature size of integrated circuits continues to decrease, the size of transistors is getting smaller and smaller, and the operating speed is getting faster and faster. Therefore, the requirements of semiconductor manufacturing processes for transistor performance are also increasing. Higher and higher. Carrier mobility is one of the main factors affecting the performance of transistors, and effectively improving carrier mobility has become one of the key points in the manufacturing process of transistor devices. [0003] In the manufacturing technology of complementary metal-oxide-semiconductor field-effect transistor (CMOS) devices, it is common to treat P-type metal-oxide-semiconductor fi...

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Problems solved by technology

[0004] However, the performance improvement of PMOS devices formed by the existing technology is limited, the process window is small, and the product yield is limited

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