1 results about "Pinning points" patented technology

The application relates to the technical field of semiconductor device manufacturing, in particular to a preparation method of an oxide layer and a semiconductor device prepared by the method. The method comprises the following steps: pre-treating a substrate under a pre-treatment atmosphere containing nitrogen to form dislocation pinning points on the surface of the substrate; performing thermal oxidation treatment on the substrate under an oxidation atmosphere containing nitrous oxide to form an oxide layer with a preset thickness on the surface of the substrate; during the thermal oxidation treatment, nitrogen atoms formed by the decomposition of the nitrous oxide are combined with vacancies in the substrate lattice to further form nitrogen-vacancy clusters at the dislocation pinning points, the dislocation lines are directly pinned, the movement of the dislocation lines on the slip plane is inhibited, and oxygen formed by the decomposition of the nitrous oxide is oxidized. The method can fundamentally inhibit the movement of the dislocation lines on the slip plane, and effectively solves the problems of long dislocation slip and accumulation caused by stress and other factors in the thermal oxidation process.