A method for manufacturing an oxide layer and a semiconductor device manufactured by the method

Abstract

The application relates to the technical field of semiconductor device manufacturing, in particular to a preparation method of an oxide layer and a semiconductor device prepared by the method. The method comprises the following steps: pre-treating a substrate under a pre-treatment atmosphere containing nitrogen to form dislocation pinning points on the surface of the substrate; performing thermal oxidation treatment on the substrate under an oxidation atmosphere containing nitrous oxide to form an oxide layer with a preset thickness on the surface of the substrate; during the thermal oxidation treatment, nitrogen atoms formed by the decomposition of the nitrous oxide are combined with vacancies in the substrate lattice to further form nitrogen-vacancy clusters at the dislocation pinning points, the dislocation lines are directly pinned, the movement of the dislocation lines on the slip plane is inhibited, and oxygen formed by the decomposition of the nitrous oxide is oxidized. The method can fundamentally inhibit the movement of the dislocation lines on the slip plane, and effectively solves the problems of long dislocation slip and accumulation caused by stress and other factors in the thermal oxidation process.

Description

Technical Field

[0001] This application relates to the field of semiconductor device manufacturing technology, specifically to a method for preparing an oxide layer and a semiconductor device prepared by the method. Background Technology

[0002] In semiconductor device manufacturing, growing an oxide layer on the silicon wafer surface is a crucial step that significantly impacts device performance and reliability. The oxide layer primarily serves several purposes: acting as a buffer layer to protect the silicon wafer from contamination or damage during subsequent processes such as ion implantation and etching; reducing stress concentration to prevent stress damage during wafer filling; and in some devices, effectively isolating different electrical regions to prevent unintended current flow. Currently, the most common methods for growing oxide layers on silicon wafers are high-temperature furnace oxidation and rapid thermal oxidation (RTO).

[0003] Although the high-temperature furnace tube oxidation method has significant advantages in mass production and can meet the production needs of large-scale semiconductor manufacturing, this method is suitable for growing thicker oxide layers and has drawbacks such as large thermal budget, long process time, poor temperature control accuracy, and high risk of contamination. These drawbacks not only lead to a longer production cycle and increased production costs, significantly reducing production efficiency, but also reduce the quality and performance of the oxide layer, thereby affecting the performance and reliability of the device.

[0004] While rapid thermal oxidation (RTO) methods can generate ultrathin oxide layers, offer fast heating speeds and short processing times, thus compensating for some of the shortcomings of high-temperature furnace oxidation and improving production efficiency, significant differences in the coefficients of thermal expansion (CTE) between silicon and the oxide layer (silicon's CTE is approximately six times that of silicon dioxide) and the significant thermal stress generated during RTO cooling, especially concentrated at the wafer edges, can lead to dislocations and slip at damaged or impurity-prone areas on the wafer surface. In severe cases, this can result in star-shaped structures or slip lines, severely impacting oxide layer quality and consequently, semiconductor device performance. Although optimizing process parameters to reduce the temperature gradient during cooling can mitigate thermal stress to some extent, this effect is limited when the RTO temperature is too high. Currently, in practical applications of RTO processes for growing thin silicon oxide films, this issue has become a key factor restricting oxide layer quality and product yield, necessitating the search for effective solutions to improve oxide layer growth quality. Summary of the Invention

[0005] The purpose of this invention is to provide a method for preparing an oxide layer, so as to solve the problem that existing processes cannot effectively suppress dislocation slip or accumulation.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a method for preparing an oxide layer, comprising the following steps: S1. The substrate is pretreated in a pretreatment atmosphere including nitrogen to inject nitrogen atoms into the lattice of the substrate, thereby causing vacancies to be formed in the lattice of the substrate to form dislocation pinning points on the surface of the substrate. S2. The substrate is subjected to thermal oxidation treatment in an oxidizing atmosphere including nitrous oxide to form an oxide layer of a predetermined thickness on the surface of the substrate; during the thermal oxidation treatment, nitrogen atoms formed by the decomposition of nitrous oxide combine with vacancies in the substrate lattice to form nitrogen-vacancy clusters at the dislocation pinning points.

[0007] Furthermore, during the pretreatment process, the pretreatment temperature is set within the range of 1050℃ to 1150℃.

[0008] Furthermore, the pretreatment process includes a heating stage and a isothermal stage; During the heating phase, the temperature rises from room temperature to a range of 1050℃ to 1150℃, and the nitrogen delivery flow rate is set in the range of 200 sccm to 500 sccm, and the nitrogen delivery flow rate gradually decreases as the temperature increases. During the isothermal phase, the nitrogen flow rate is maintained in the range of 200 sccm to 250 sccm to continuously inject nitrogen atoms into the substrate lattice.

[0009] Furthermore, the thermal oxidation treatment is a rapid thermal oxidation treatment.

[0010] Furthermore, during the thermal oxidation process, based on the preset thickness, the flow rate of nitrous oxide is set in the range of 200 sccm to 500 sccm, and the processing temperature of the thermal oxidation process is controlled in the range of 800℃ to 1200℃.

[0011] Furthermore, during the thermal oxidation process, the oxidizing atmosphere also includes O2 and / or an inert gas.

[0012] Further, in step S2, after the oxide layer is formed on the surface of the substrate, the substrate is cooled to form a uniform oxide layer; During the cooling process, the temperature is reduced to room temperature at a rate of 10°C / min to 150°C / min.

[0013] Furthermore, during the cooling process, a preset holding time is set for each 50°C to 150°C decrease in temperature.

[0014] This application also provides a semiconductor device prepared by the above preparation method, which is a standard sheet for oxide layer thickness testing.

[0015] This application also provides a semiconductor device prepared by the above preparation method, wherein the substrate of the semiconductor device is a silicon substrate.

[0016] Furthermore, the above-described preparation method is also used to prepare silicon substrate devices; the silicon substrate device includes a silicon substrate and an oxide layer stacked on the surface of the silicon substrate, the oxide layer being prepared using the above-described preparation method.

[0017] The beneficial effects of this invention are as follows: The preparation method provided in this application forms dislocation pinning points by injecting nitrogen atoms into the substrate lattice during the pretreatment process and directly pinning dislocation lines by forming nitrogen-vacancy clusters during the thermal oxidation process. That is, through the synergistic effect of the pretreatment step and the thermal oxidation process, the dislocation slip distance is fundamentally suppressed from being too long and forming slip lines or star-shaped structures formed by the interweaving of multiple slip systems. This effectively solves the problem of excessive dislocation slip and accumulation caused by stress and other factors in the thermal oxidation process.

[0018] In this application, by optimizing parameters such as temperature and gas flow rate during pretreatment, thermal oxidation, and cooling processes, the operability and stability of the method in actual operation are further ensured, greatly expanding the application scope of the method and laying the foundation for the large-scale production of oxide films.

[0019] This method effectively suppresses dislocation slip, thereby significantly reducing defects caused by dislocation slip. This results in excellent uniformity and integrity of the oxide layer across the entire substrate surface, significantly improving the quality of the oxide layer and contributing to enhanced device performance and reliability. Furthermore, in traditional processes, to avoid adverse effects on device performance due to uneven oxide layer at the substrate edges, the substrate edges are typically cut off. However, in this application, because the oxide layer across the entire substrate surface has high uniformity, there is no need to cut off the substrate edges during device fabrication, significantly reducing material waste and greatly improving substrate utilization. This not only helps reduce device manufacturing costs but also meets the current development needs of the electronics industry for efficient and energy-saving production.

[0020] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, the preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0021] Figure 1 This is a process flow diagram of the oxide layer preparation method according to an embodiment of the present invention; Figure 2 This is a surface inspection result diagram of a substrate with a uniform oxide layer deposited on its surface, as shown in Embodiment 1 of the present invention. Figure 3 This is a surface inspection result diagram of a substrate with a uniform oxide layer deposited on its surface, as shown in Comparative Example 1 of the present invention. Detailed Implementation

[0022] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0023] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0024] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0025] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0026] A preferred embodiment of this application illustrates a method for preparing an oxide layer, comprising the following steps: S1. The substrate is pretreated in a pretreatment atmosphere including nitrogen to inject nitrogen atoms into the substrate lattice, thereby creating vacancies in the substrate lattice and forming dislocation pinning points on the substrate surface. S2. Under an oxidizing atmosphere including nitrous oxide, the substrate is subjected to thermal oxidation treatment to form an oxide layer of a predetermined thickness on the substrate surface; during the thermal oxidation treatment, nitrogen atoms formed by the decomposition of nitrous oxide combine with vacancies in the substrate lattice to form nitrogen-vacancy clusters at dislocation pinning points.

[0027] Pre-treating the substrate in a nitrogen-containing atmosphere not only injects nitrogen atoms into the substrate lattice, creating vacancy structures and dislocation pinning points on the substrate surface, but also efficiently removes air and impurities from the reaction chamber, as well as impurities adsorbed on the substrate surface, creating an oxygen-free environment that provides a fundamental guarantee for the stable growth of the subsequent oxide layer. In this embodiment and other embodiments, the preset thickness of the oxide layer can be any value within the range of 20 angstroms to 200 angstroms.

[0028] During thermal oxidation, nitrogen atoms produced by the decomposition of nitrous oxide combine with vacancies in the substrate lattice, further forming stable nitrogen-vacancy pairs (NVs) or more complex clusters at dislocation pinning points. These clusters can directly pin dislocation lines, effectively suppressing dislocation movement on slip planes. Simultaneously, the oxygen generated from the decomposition of nitrous oxide is used for oxidation, thereby improving the uniformity of the oxide layer across the entire substrate surface and strengthening the bonding stability between the oxide layer and the substrate. This also effectively avoids excessive dislocation slip or accumulation at substrate surface damage or impurities caused by stress and other factors, especially at substrate edges, thus significantly reducing the probability of forming star-shaped structures or slip lines on the substrate surface. Furthermore, the interstitial presence of nitrogen atoms in these nitrogen-vacancy pairs (NVs) or more complex clusters within the substrate lattice causes lattice distortion, creating a specific stress field. This stress field can interact complexly with the existing stress field around the dislocation pinning points, further hindering dislocation movement and preventing the formation of macroscopic defects.

[0029] This embodiment provides dual protection for the uniformity of the oxide layer, ensuring that the oxide layer achieves a highly uniform and stable state at both the microscopic and macroscopic levels. This well-uniform oxide layer provides a reliable guarantee for subsequent applications of the substrate, ensuring that it maintains high stability and reliability under various complex environments.

[0030] In one embodiment, the pretreatment temperature is precisely controlled within the range of 1050°C to 1150°C during the pretreatment process. This temperature range ensures that nitrogen atoms are effectively injected into the substrate lattice while avoiding excessive damage to the substrate lattice.

[0031] In one embodiment, the pretreatment process includes a heating stage and a isothermal stage. During the heating stage, the temperature is increased from room temperature to a range of 1050°C to 1150°C. During this process, the nitrogen flow rate is controlled within the range of 200 sccm to 500 sccm, and the nitrogen flow rate gradually decreases as the temperature increases to create an oxygen-free environment required for oxide deposition, while simultaneously performing preliminary nitrogen atom implantation. Uniform heating helps the substrate to be heated evenly, reducing the impact of thermal stress on the substrate. Specifically, in the early stages of the heating stage, a larger nitrogen flow rate can quickly remove air and impurities from the reaction chamber. As the temperature increases, the nitrogen flow rate is appropriately reduced to ensure complete removal of impurities from the reaction chamber and the substrate surface, while also allowing for preliminary nitrogen atom implantation in a gentle manner. The uniform heating design ensures uniform heating of the substrate, effectively avoiding thermal stress caused by localized excessively high or low temperatures, thereby minimizing the potential impact of thermal stress on the substrate structure and performance. During the isothermal phase, the nitrogen flow rate is maintained in the range of 200 sccm to 250 sccm to continuously and stably inject nitrogen atoms into the substrate lattice, ensuring the success of subsequent processes.

[0032] In one embodiment, the thermal oxidation process employs a rapid thermal oxidation method. Rapid thermal oxidation can improve production efficiency while ensuring the uniformity and density of the oxide layer, and can also effectively reduce thermal damage to the substrate, thereby improving device reliability.

[0033] In one embodiment, during the thermal oxidation process, the oxidation parameters can be precisely controlled based on a preset oxide layer thickness, limiting the processing temperature to a range of 800℃ to 1200℃. This temperature range can meet the growth requirements of oxide layers of different thicknesses while ensuring the quality of the oxide layer. Furthermore, during the thermal oxidation process, the flow rate of nitrous oxide is set within the range of 200 sccm to 500 sccm to ensure a sufficient supply of nitrogen and oxygen atoms during oxidation, promoting the formation of nitrogen-vacancy clusters and the progress of the oxidation reaction. At 650℃, nitrous oxide decomposes into nitrogen and oxygen gas, with the reaction formula: 2N₂O(g) → 2N₂(g) + O₂(g). Under high-temperature conditions, such as 900℃-1000℃, approximately 99% of nitrous oxide can be decomposed, and complete decomposition can be achieved at temperatures above 1000℃.

[0034] In one embodiment, during the thermal oxidation process, the oxidizing atmosphere may further include O2 and / or an inert gas. The introduction of O2 promotes the oxidation reaction and effectively improves oxidation efficiency. The inert gas facilitates the flow of the atmosphere within the reaction chamber, making the atmosphere more uniform and stable. Furthermore, the inert gas dilutes the oxidizing atmosphere, preventing excessively vigorous oxidation reactions due to excessively high temperatures in localized areas, thus preventing localized over-oxidation and ensuring the uniformity of the oxide layer in terms of thickness and composition.

[0035] In one embodiment, after forming an oxide layer on the substrate surface in step S2, the substrate can be cooled to form a uniform oxide layer on the substrate surface. Cooling the substrate with the oxide layer deposited on its surface significantly enhances the bonding performance between the oxide layer and the substrate. During the cooling process, by rationally and precisely controlling the temperature gradient, thermal stress between the substrate and the oxide layer can be effectively alleviated, further reducing dislocation slip at substrate surface damage or impurities, resulting in high uniformity of the oxide layer across the entire substrate surface at the microscopic level. During the cooling process, the temperature in the reaction chamber is uniformly reduced to 10°C to 100°C at a cooling rate of 10°C / min to 150°C / min. By rationally controlling the cooling rate, problems such as large thermal stress and localized stress concentration in the oxide layer due to rapid temperature changes can be avoided, ensuring the uniformity, density, and structural integrity of the oxide layer.

[0036] In one embodiment, to prevent dislocation slippage leading to macroscopic defects and further improve the uniformity and density of the oxide layer during the cooling process, the temperature gradient during cooling was optimized by employing a segmented cooling-holding method. Specifically, during the cooling process at a rate of 10°C / min to 150°C / min, a preset holding time is set for every 50 to 150°C decrease in temperature. This preset time can be set according to the actual needs of the production process. This method allows for the full release of thermal stress within the oxide layer and between the oxide layer and the substrate, thereby improving the uniformity and stability of the oxide layer.

[0037] This application also provides a semiconductor device, which is prepared by the above-described preparation method, and the semiconductor device is a standard sheet for oxide layer thickness testing.

[0038] This application also provides a semiconductor device, which is prepared by the above-described preparation method, and the substrate of the semiconductor device is a silicon substrate.

[0039] Example 1 S1. Obtain a silicon substrate and place it in a reaction chamber, using nitrogen as the pretreatment atmosphere. Increase the temperature inside the reaction chamber to 1100°C at a heating rate of 20°C / min. During the heating phase, continuously supply nitrogen gas to the chamber at a flow rate of 300 sccm to remove air, impurities, and adsorbed impurities from the silicon substrate surface, while simultaneously performing initial implantation of the silicon substrate. Once the temperature inside the reaction chamber reaches 1100°C, reduce the nitrogen flow rate to 200 sccm and hold for 10 minutes to allow more nitrogen atoms to be injected into the substrate lattice, promoting the formation of vacancies in the substrate lattice and dislocation pinning points on the substrate surface.

[0040] S2. At a temperature of 1100℃, nitrous oxide is fed into the reaction chamber at a flow rate of 300 sccm to perform thermal oxidation treatment on the substrate. During the thermal oxidation process, oxygen atoms formed from the decomposition of nitrous oxide react with the silicon substrate to form a silicon oxide layer with a thickness of approximately 60 angstroms on the surface of the silicon substrate; nitrogen atoms formed from the decomposition of nitrous oxide combine with vacancies in the substrate lattice to form nitrogen-vacancy clusters at dislocation pinning points, directly pinning the dislocation lines and inhibiting the movement of dislocations on the slip plane.

[0041] Then, the temperature of the reaction chamber was reduced to 50°C at a rate of 50°C / min to cool the substrate; finally, a substrate with a uniform oxide layer deposited on its surface was obtained.

[0042] Example 2 S1. Obtain a silicon substrate and place it in a reaction chamber, using nitrogen as the pretreatment atmosphere. During the heating phase, raise the temperature inside the reaction chamber to 1050°C at a heating rate of 50°C / min. At the beginning of the heating, supply nitrogen gas into the chamber at a flow rate of 500 sccm. As the temperature increases, the nitrogen flow rate is decreased uniformly to remove air, impurities, and impurities adsorbed on the silicon substrate surface, while simultaneously performing initial implantation of the silicon substrate. When the temperature inside the reaction chamber reaches 1050°C, reduce the nitrogen flow rate to 220 sccm and maintain this flow rate to continue supplying nitrogen gas into the reaction chamber. Simultaneously, maintain this temperature for 10 minutes to continuously and stably inject nitrogen atoms into the substrate lattice, promoting the formation of vacancies in the substrate lattice and dislocation pinning points on the substrate surface.

[0043] S2. Nitrous oxide is fed into the reaction chamber at a flow rate of 300 sccm at a temperature of 850℃ to perform thermal oxidation treatment on the substrate using a rapid thermal oxidation process. During the thermal oxidation process, oxygen atoms formed from the decomposition of nitrous oxide react with the silicon substrate to form a silicon oxide layer with a thickness of approximately 30 angstroms on the surface of the silicon substrate; nitrogen atoms formed from the decomposition of nitrous oxide combine with vacancies in the substrate lattice to form nitrogen-vacancy clusters at dislocation pinning points, directly pinning the dislocation lines and inhibiting the movement of dislocations on the slip plane.

[0044] Then, the temperature of the reaction chamber was reduced to 50℃ at a rate of 50℃ / min, and the temperature was held for 1 minute for every 100℃ decrease in temperature to cool the substrate, and finally a substrate with a uniform oxide layer deposited on the surface was obtained.

[0045] Comparative Example 1 The difference between this comparative example and Example 2 is that in step S2, only oxygen is used as the oxidizing atmosphere during the thermal oxidation process. This results in a substrate with a uniform oxide layer deposited on its surface.

[0046] The substrates with uniform oxide layers deposited on their surfaces, obtained in Examples 1, 2, and Comparative Example 1, were placed under a testing lamp for testing. The testing results are as follows: Figure 2 and Figure 3 As shown.

[0047] Depend on Figure 2 , Figure 3It can be seen that the substrate with a uniform oxide layer deposited on its surface obtained in Example 1 has a high degree of uniformity in its oxide layer and no slip lines; the substrate with a uniform oxide layer deposited on its surface obtained in Example 2 also has no slip lines; while the substrate with a uniform oxide layer deposited on its surface obtained in Comparative Example 1 has obvious slip lines. This comparative result strongly illustrates that, compared with an O2 atmosphere, an oxidizing atmosphere containing N2O can reduce the slip distance and velocity of dislocations through the pinning effect, that is, by pinning dislocations through N2O-derived nitrogen atoms, thereby significantly reducing the existence of macroscopic defects such as slip lines on the substrate surface. This also demonstrates that the oxide layer preparation method provided in this application can effectively suppress dislocation movement on the slip plane by injecting nitrogen atoms into the substrate lattice to form dislocation pinning points during the pretreatment process, and then directly pinning the dislocation lines by forming nitrogen-vacancy clusters during the thermal oxidation process. This effectively prevents dislocation slip from becoming too long or from accumulating, solving the problem that existing methods cannot effectively suppress dislocation slip, resulting in an oxide layer on the substrate surface with excellent uniformity and integrity. Furthermore, in Examples 1 and 2, rapid thermal treatment in a nitrogen atmosphere can significantly improve the mechanical strength of the substrate, while in Comparative Example 1, the oxygen atmosphere does not achieve the same effect.

[0048] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0049] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A method for preparing an oxide layer, characterized in that, Includes the following steps: S1. The substrate is pretreated in a pretreatment atmosphere including nitrogen to inject nitrogen atoms into the lattice of the substrate, thereby causing vacancies to be formed in the lattice of the substrate to form dislocation pinning points on the surface of the substrate. S2. The substrate is subjected to thermal oxidation treatment in an oxidizing atmosphere including nitrous oxide to form an oxide layer of a predetermined thickness on the surface of the substrate; during the thermal oxidation treatment, nitrogen atoms formed by the decomposition of nitrous oxide combine with vacancies in the substrate lattice to form nitrogen-vacancy clusters at the dislocation pinning points.

2. The preparation method according to claim 1, characterized in that, During the pretreatment process, the pretreatment temperature is set in the range of 1050℃ to 1150℃.

3. The preparation method according to claim 2, characterized in that, The pretreatment process includes a heating stage and a constant temperature stage; During the heating phase, the temperature rises from room temperature to a range of 1050℃ to 1150℃, and the nitrogen delivery flow rate is set in the range of 200 sccm to 500 sccm, and the nitrogen delivery flow rate gradually decreases as the temperature increases. During the isothermal phase, the nitrogen flow rate is maintained in the range of 200 sccm to 250 sccm to continuously inject nitrogen atoms into the substrate lattice.

4. The preparation method according to claim 1, characterized in that, The thermal oxidation treatment is a rapid thermal oxidation treatment.

5. The preparation method according to claim 4, characterized in that, During the thermal oxidation process, based on the preset thickness, the flow rate of nitrous oxide is set in the range of 200 sccm to 500 sccm, and the processing temperature of the thermal oxidation process is controlled in the range of 800℃ to 1200℃.

6. The preparation method according to claim 4, characterized in that, During the thermal oxidation process, the oxidizing atmosphere also includes O2 and / or an inert gas.

7. The preparation method according to any one of claims 1-6, characterized in that, Step S2: After the oxide layer is formed on the surface of the substrate, the substrate is cooled to form a uniform oxide layer. During the cooling process, the temperature is reduced to room temperature at a rate of 10°C / min to 150°C / min.

8. The preparation method according to claim 7, characterized in that, During the cooling process, a preset holding time is set for each 50°C to 150°C decrease in temperature.

9. A semiconductor device prepared by the preparation method according to any one of claims 1-8, characterized in that, The semiconductor device is a standard sheet used for oxide layer thickness testing.

10. A semiconductor device prepared by the preparation method according to any one of claims 1-8, characterized in that, The substrate of the semiconductor device is a silicon substrate.

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