Preparation of high-potential gradient ZnO thick film piezoresistor

A varistor, high-potential technology, applied in varistor, varistor core, resistor manufacturing, etc., can solve the problems of high sintering temperature and low product potential gradient index, and achieve low sintering temperature and equipment requirements The effect of low cost and simple process

Inactive Publication Date: 2008-08-20
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the screen printing method with simple process and low cost has potential advantages in the production process and production cost, due to the high s...

Method used

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  • Preparation of high-potential gradient ZnO thick film piezoresistor
  • Preparation of high-potential gradient ZnO thick film piezoresistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] In the first step, ZnO:Bi 2 o 3 :Sb 2 o 3 :Cr 2 o 3 :Co 2 o 3 :MnO 2 : Y 2 o 3 The mol ratio is 96.48: 0.7: 1.0: 0.5: 0.8: 0.5: 0.02, X=0.02, wet milling in absolute ethanol for 10 hours, the ball-to-material ratio is 10:1, the ball milling speed is 300rpm, the dry mixed powder Put the powder into a ball mill tank, dry mill for 1 hour, the ball-to-material ratio is 10:1, and the ball milling speed is 300rpm; in the second step, the concentration of the organic carrier is 2%, and the mass ratio of the mixed powder to the organic carrier is 1:0.5 ; In the fourth step, the number of steps is 10, and each step is 2 times; in the sixth step, the temperature is slowly raised to 650°C and kept for 2 hours.

[0039] The electrical performance index of the product in this embodiment is: potential gradient 2526.8V / mm; nonlinear coefficient 10.6; leakage current 44.1μA.

Embodiment 2

[0041] In the first step, the molar ratio of ZnO: Bi2O3: Sb2O3: Cr2O3: Co2O3: MnO2: Y2O3 is 96.44: 0.7: 1.0: 0.5: 0.8: 0.5: 0.10, X=0.06, wet grinding in absolute ethanol for 7.5 hours, The ball-to-material ratio is 25:1, the ball milling speed is 450rpm, put the dry mixed powder into the ball milling tank, dry mill for 1.5 hours, the ball-to-material ratio is 25:1, and the ball milling speed is 450rpm; in the second step, the The concentration is 6%, and the mass ratio of the mixed powder to the organic carrier is 1:2; in the fourth step, the number of steps is 5 steps, and each step is 3 times; in the sixth step, the temperature is slowly raised to 750° C. and kept for 1.25 hours.

[0042] The electrical performance index of the product in this embodiment is: potential gradient 2893.8V / mm; nonlinear coefficient 10.05; leakage current 61.15μA.

Embodiment 3

[0044] In the first step, ZnO:Bi 2 o 3 :Sb 2 o 3 :Cr 2 o 3 :Co 2 o 3 :MnO 2 : Y 2 o 3 The mol ratio is 96.40: 0.7: 1.0: 0.5: 0.8: 0.5: 0.10, X=0.10, wet milling in absolute ethanol for 5 hours, the ball-to-material ratio is 40:1, the ball milling speed is 600rpm, the dried mixed powder The body was put into a ball mill tank, and dry milled for 2 hours, the ball-to-material ratio was 40:1, and the ball milling speed was 600rpm; in the second step, the concentration of the organic carrier was 10%, and the mass ratio of the mixed powder to the organic carrier was 1:1 ; In the fourth step, the number of steps is 2 steps, 5 times in each step; in the sixth step, the temperature is slowly raised to 850° C. and kept for 0.5 hours.

[0045] The electrical performance index of the product in this embodiment is: potential gradient 3260.8V / mm; nonlinear coefficient 9.5; leakage current 72.8μA.

[0046] The invention is particularly suitable for preparing high potential gradien...

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Abstract

The invention is a manufacturing method of a high-potential gracient ZnO thick-film voltage dependent resistor, belonging to the field of voltage dependent resistor manufacture technology, comprising the steps of: successively depositing membranoid substances on a Al2O3 ceramic plate substrate by screen painting process: a bottom electrode, a ZnO voltage dependent resistor body and a top electrode; and sticking a electrode terminal to the end surfaces of the bottom and top electrodes, characterized in: the slurry for manufacturing the ZnO voltage dependent resistor contains rare-earth metal oxide Y2O3; the ZnO voltage dependent resistor body has a thick-film structure, and a multi-layer film is stacked into a thick film by steps of screen painting process. The method has the advantages of simple process, operation simplicity, low sintering temperature, low equipment requirements, low manufacturing cost, and the ability of manufacturing high performance ZnO thick-film voltage dependent resistor.

Description

technical field [0001] The invention relates to a preparation method of a high potential gradient ZnO thick film varistor, which belongs to the technical field of varistor material manufacturing. Background technique [0002] ZnO varistors have been rapidly developed and widely used due to their excellent nonlinear volt-ampere characteristics, strong surge absorption capacity and good working stability. With the development of large-scale integrated circuits, especially the rapid development of digital electronic technology, the miniaturization and integration of ZnO varistors has become a research hotspot and development direction in the future. High potential gradient ZnO thick film varistor has the advantages of small size, high potential gradient and suitable for surface mount technology. It has more and more broad application prospects in overvoltage protection of small circuits and varistor arrays. [0003] There are many preparation methods for thick film varistors, ...

Claims

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Application Information

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IPC IPC(8): H01C7/112H01C7/10H01C17/00
Inventor 马学鸣柯磊仇红军
Owner EAST CHINA NORMAL UNIV
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