A flip-chip light-emitting diode chip and its manufacturing method

Abstract

The invention provides an inverted light emitting diode chip and a manufacturing method thereof. The inverted light emitting diode chip comprises a substrate, an epitaxy structure, a transparent conducting layer, a reflecting mirror, an insulation groove, an insulation barrier layer, a mesa structure, a reflective conducting layer, a passivation layer, an N electrode and a P electrode. According to the inverted light emitting diode chip and the manufacturing method thereof provided by the invention, a channel for insulation is formed on the periphery of the inverted light emitting diode chip, so that a leakage current of the chip can be reduced; the reflecting mirror is additionally arranged at a scribe line area, so that the product brightness is improved favorably; in addition, the derivation of N-GaN is manufactured on the side wall of the N-GaN and the scribe line area, so that the effective light emitting area of a light emitting diode can be greatly increased, and the brightness is improved; by means of an N reflective conducting layer and a P electrode reserving area, the N electrode and the P electrode can be directly manufactured after the passivation layer is tapped, so that the process step is reduced, and the production cost is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting and manufacturing, in particular to a flip-chip light-emitting diode chip and a manufacturing method thereof. Background technique [0002] As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and fluorescent lamps. The upgrading of the industry and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes LEDs are made of semiconductors such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide), a...

AI Technical Summary

Problems solved by technology

[0007] First, there is no reflector in the cutting line, which wastes limited light;

[0008] Second, there is no channel insulation around the chip, resulting in increased leakage;

[0009] Third, the contact position between the N electrode and N-GaN is on the front of the chip, causing the N electrode to occupy a large effective light-emitting area, which greatly reduces the luminous intensity of the chip;

[0010] Fourth, the flip-chip process requires 6-8 photolithography processes, which is costly

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