Epitaxial structure provided with Bragg reflector, preparation method thereof and LED chip

A Bragg reflector and epitaxial structure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of low light-emitting efficiency of LED chips, and achieve the effect of improving anti-static ability, improving overall yield, and simplifying process

Pending Publication Date: 2022-03-25
FOSHAN NATIONSTAR SEMICON
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing LED chips generally include a substrate, an N-GaN layer, an active layer, and a P-GaN layer arranged in sequence. The light emitted from the active layer needs to flow from the P-GaN layer with a high refractive index to the air with a low refractive index. The light emitted by the acti

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial structure provided with Bragg reflector, preparation method thereof and LED chip
  • Epitaxial structure provided with Bragg reflector, preparation method thereof and LED chip
  • Epitaxial structure provided with Bragg reflector, preparation method thereof and LED chip

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0061] Accordingly, the present application also provides a preparation method of an epitaxial structure equipped with a Prague mirror, comprising the steps of:

[0062] S1, using a metal organic compound chemical gas phase precipitation method, a GaN composite layer is formed on the substrate;

[0063] Specifically, the preparation method of the GaN composite layer includes:

[0064] At the temperature of 500 to 900 ° C, the pressure is 180 to 220 torr, a GaN buffer layer having a thickness of 10 to 100 nm is formed on the substrate;

[0065] The temperature was raised to 900 ~ 1200 ° C, the pressure remained unchanged, and a GaN-free doped layer having a thickness of 2 to 4 μm was formed on the GaN buffer layer.

[0066] S2, at a temperature of 900 to 1200 ° C, under the condition of 180 to 220 torr, a plurality of cycles are formed on the GaN composite layer to form a Prague mirror;

[0067] S3, maintaining temperature and pressure constant, forming an N-GaN layer on the Prague...

Example Embodiment

[0080] Example 1

[0081] A preparation method of an epitaxial structure with a Prague mirror, comprising the steps of:

[0082] S1, adjusting the temperature of 1050 ° C in the reaction chamber, maintained in a hydrogen atmosphere for 2 minutes;

[0083] S2, the temperature drops to 555 ° C, the pressure is maintained at 500 torr, forming a GaN buffer layer having a thickness of 40 nm on sapphire substrate;

[0084] S3, the temperature is raised to 1050 ° C, the pressure is maintained at 200 Torr, forming a thickness of 3 μm on the GaN buffer layer; no doped layer;

[0085]S4, the temperature and pressure are unchanged, and 30 cycles of the AlN layer and GaN layer are grown on the GaN-free layer to form a Prague mirror, and the thickness of the AlN layer and the GaN layer is 30 nm and 48.5 nm per cycle;

[0086] S5, holding temperature and pressure, forming a N-GaN layer having a thickness of 2 μm on the Prague mirror, and the doping concentration of Si is 1e9;

[0087] S6, the t...

Example Embodiment

[0093] Example 2

[0094] A preparation method of an epitaxial structure with a Prague mirror, comprising the steps of:

[0095] S1, adjusting the temperature of 1050 ° C in the reaction chamber, maintained in a hydrogen atmosphere for 2 minutes;

[0096] S2, the temperature drops to 800 ° C, the pressure is maintained at 600 torr, forming a GaN buffer layer having a thickness of 70 nm on sapphire substrate;

[0097] S3, the temperature is raised to 1150 ° C, the pressure is maintained at 220 torr, forming a GaN-free doped layer having a thickness of 4 μm on the GaN buffer layer;

[0098] S4, the temperature and pressure are constant, and the AlN layer and GaN layer of 25 cycles are grown on the GaN-free layer to form a Bragg mirror, and the thickness of the AlN layer and the GaN layer in each cycle is 32 nm and 52 nm;

[0099] S5, the temperature and pressure are not changed, and the N-GaN layer having a thickness of 3 μm is formed on the Prague mirror, and the doping concentrati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an epitaxial structure provided with a Bragg reflector, a preparation method thereof and an LED chip, the epitaxial structure comprises a GaN composite layer, the Bragg reflector, an N-GaN layer, a stress release layer, a quantum well layer, a P-AlGaN layer and a P-GaN layer which are arranged in sequence, the Bragg reflector is composed of a plurality of periods of AlN layers/GaN layers, and the stress release layer is composed of a plurality of periods of N layers/GaN layers. The growth temperature of the AlN layer and the growth temperature of the GaN layer in the Bragg reflector are the same and range from 900 DEG C to 1200 DEG C. The epitaxial structure is high in luminous efficiency and good in antistatic performance, and surface cracks of the Bragg reflector are few.

Description

technical field [0001] The present application relates to the technical field of light emitting diodes, in particular to an epitaxial structure provided with a Bragg reflector, a preparation method thereof, and an LED chip. Background technique [0002] Light-emitting diode, referred to as LED, is a commonly used light-emitting device, which releases energy and emits light through the recombination of electrons and holes. It is widely used in the field of lighting. Light-emitting diodes can efficiently convert electrical energy into light energy, and have a wide range of uses in modern society, such as lighting, flat panel displays, medical devices, etc. [0003] Existing LED chips generally include a substrate, an N-GaN layer, an active layer, and a P-GaN layer arranged in sequence. The light emitted from the active layer needs to flow from the P-GaN layer with a high refractive index to the air with a low refractive index. The light emitted by the active layer is totally ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/10H01L33/14H01L33/00
CPCH01L33/10H01L33/007H01L33/14
Inventor 潘树林靳彩霞李刚张文燕徐金荣阮钇
Owner FOSHAN NATIONSTAR SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap