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Epitaxial structure provided with Bragg reflector, preparation method thereof and LED chip

A Bragg reflector and epitaxial structure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of low light-emitting efficiency of LED chips, and achieve the effect of improving anti-static ability, improving overall yield, and simplifying process

Pending Publication Date: 2022-03-25
FOSHAN NATIONSTAR SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing LED chips generally include a substrate, an N-GaN layer, an active layer, and a P-GaN layer arranged in sequence. The light emitted from the active layer needs to flow from the P-GaN layer with a high refractive index to the air with a low refractive index. The light emitted by the active layer is totally reflected in the chip, and most of the light is reflected multiple times in the chip and absorbed by the defects inside the LED chip, and only a small part of the light can be emitted from the active layer to the air. , so the light extraction efficiency of existing LED chips is low

Method used

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  • Epitaxial structure provided with Bragg reflector, preparation method thereof and LED chip
  • Epitaxial structure provided with Bragg reflector, preparation method thereof and LED chip
  • Epitaxial structure provided with Bragg reflector, preparation method thereof and LED chip

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preparation example Construction

[0061] Correspondingly, the present application also provides a method for preparing an epitaxial structure provided with a Bragg mirror, comprising the following steps:

[0062] S1. Forming a GaN composite layer on the substrate by metal-organic compound chemical vapor deposition;

[0063] Specifically, the preparation method of the GaN composite layer includes:

[0064] Forming a GaN buffer layer with a thickness of 10-100 nm on the substrate under the conditions of a temperature of 500-900° C. and a pressure of 180-220 Torr;

[0065] Raise the temperature to 900-1200° C., keep the pressure constant, and form a GaN non-doped layer with a thickness of 2-4 μm on the GaN buffer layer.

[0066] S2. Under the conditions of a temperature of 900-1200° C. and a pressure of 180-220 Torr, several periods of AlN layers / GaN layers are formed on the GaN composite layer to form a Bragg reflector;

[0067] S3. Keeping the temperature and pressure constant, forming an N-GaN layer on the B...

Embodiment 1

[0081] A method for preparing an epitaxial structure provided with a Bragg reflector, comprising the following steps:

[0082] S1. Adjust the temperature in the reaction chamber to 1050° C., and maintain the pressure in a hydrogen atmosphere to process the sapphire substrate for 2 minutes;

[0083] S2. Lower the temperature to 555° C., maintain the pressure at 500 Torr, and form a GaN buffer layer with a thickness of 40 nm on the sapphire substrate;

[0084] S3, raising the temperature to 1050° C., maintaining the pressure at 200 Torr, and forming a GaN undoped layer with a thickness of 3 μm on the GaN buffer layer;

[0085]S4. Keeping the temperature and pressure constant, grow 30 cycles of AlN layer and GaN layer on the GaN undoped layer to form a Bragg mirror, and the thickness of the AlN layer and GaN layer in each cycle is 30nm and 48.5nm;

[0086] S5. Keeping the temperature and pressure constant, an N-GaN layer with a thickness of 2 μm is formed on the Bragg reflector,...

Embodiment 2

[0094] A method for preparing an epitaxial structure provided with a Bragg reflector, comprising the following steps:

[0095] S1. Adjust the temperature in the reaction chamber to 1050° C., and maintain the pressure in a hydrogen atmosphere to process the sapphire substrate for 2 minutes;

[0096] S2. Lower the temperature to 800° C., maintain the pressure at 600 Torr, and form a GaN buffer layer with a thickness of 70 nm on the sapphire substrate;

[0097] S3, raising the temperature to 1150° C., maintaining the pressure at 220 Torr, and forming a GaN undoped layer with a thickness of 4 μm on the GaN buffer layer;

[0098] S4. Keeping the temperature and pressure constant, grow 25 cycles of AlN layer and GaN layer on the GaN undoped layer to form a Bragg reflector, and the thickness of the AlN layer and GaN layer in each cycle is 32nm and 52nm;

[0099] S5. Keeping the temperature and pressure constant, an N-GaN layer with a thickness of 3 μm is formed on the Bragg reflecto...

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Abstract

The invention discloses an epitaxial structure provided with a Bragg reflector, a preparation method thereof and an LED chip, the epitaxial structure comprises a GaN composite layer, the Bragg reflector, an N-GaN layer, a stress release layer, a quantum well layer, a P-AlGaN layer and a P-GaN layer which are arranged in sequence, the Bragg reflector is composed of a plurality of periods of AlN layers / GaN layers, and the stress release layer is composed of a plurality of periods of N layers / GaN layers. The growth temperature of the AlN layer and the growth temperature of the GaN layer in the Bragg reflector are the same and range from 900 DEG C to 1200 DEG C. The epitaxial structure is high in luminous efficiency and good in antistatic performance, and surface cracks of the Bragg reflector are few.

Description

technical field [0001] The present application relates to the technical field of light emitting diodes, in particular to an epitaxial structure provided with a Bragg reflector, a preparation method thereof, and an LED chip. Background technique [0002] Light-emitting diode, referred to as LED, is a commonly used light-emitting device, which releases energy and emits light through the recombination of electrons and holes. It is widely used in the field of lighting. Light-emitting diodes can efficiently convert electrical energy into light energy, and have a wide range of uses in modern society, such as lighting, flat panel displays, medical devices, etc. [0003] Existing LED chips generally include a substrate, an N-GaN layer, an active layer, and a P-GaN layer arranged in sequence. The light emitted from the active layer needs to flow from the P-GaN layer with a high refractive index to the air with a low refractive index. The light emitted by the active layer is totally ...

Claims

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Application Information

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IPC IPC(8): H01L33/10H01L33/14H01L33/00
CPCH01L33/10H01L33/007H01L33/14
Inventor 潘树林靳彩霞李刚张文燕徐金荣阮钇
Owner FOSHAN NATIONSTAR SEMICON
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