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Method for preparing polycrystalline black silicon suede in single-sided by a metal catalytic chemical etching method

A technology of metal catalysis and corrosion method, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems affecting the large-scale promotion of the dry black silicon market, the expensive dry black silicon technology equipment, and the complex process. problem, to achieve the effect of being beneficial to the formation of the back field structure, improving the quantum efficiency, and low surface reflectivity

Inactive Publication Date: 2018-06-19
WUXI SUNTECH POWER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dry-process black silicon technology equipment is expensive and the process is complicated, which affects the large-scale promotion of dry-process black silicon market

Method used

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  • Method for preparing polycrystalline black silicon suede in single-sided by a metal catalytic chemical etching method
  • Method for preparing polycrystalline black silicon suede in single-sided by a metal catalytic chemical etching method
  • Method for preparing polycrystalline black silicon suede in single-sided by a metal catalytic chemical etching method

Examples

Experimental program
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Effect test

Embodiment 1

[0039] Example 1: A method for preparing polycrystalline black silicon suede on one side by metal-catalyzed chemical corrosion method, including the following process: loading → alkali polishing → water washing → pickling → water washing → immersion silver → digging holes → water washing → desilvering → water washing → Pickling → Reaming → Water washing → Alkali washing → Water washing → Pickling → Water washing → Fragmentation → Pickling → Water washing → Drying; Specifically:

[0040] (1) Chip loading: Stack diamond wire-cut polycrystalline original silicon wafers with a resistivity of 1-3Ω•cm and a silicon wafer thickness of 200±20μm every two pieces, and insert them into the card slot of the textured carrying box, the same card slot There are two silicon wafers bonded together;

[0041] (2) Alkali polishing: Use a potassium hydroxide solution with a mass percentage concentration of 6% to remove the damaged layer on the surface of the diamond wire-cut polycrystalline origin...

Embodiment 2

[0062] Example 2: A method for preparing polycrystalline black silicon suede on one side by metal-catalyzed chemical corrosion method, including the following process flow: chip loading → alkali polishing → water washing → pickling → water washing → immersion silver digging two-in-one → water washing → stripping Silver→washing→pickling→hole expansion→washing→slicing→desilvering and alkaline washing→washing→pickling→washing→drying; specifically:

[0063] (1) Chip loading: Stack diamond wire-cut polycrystalline original silicon wafers with a resistivity of 1-3Ω•cm and a silicon wafer thickness of 200±20μm every two pieces, and insert them into the card slot of the textured carrying box, the same card slot There are two silicon wafers bonded together;

[0064] (2) Alkali polishing: use a potassium hydroxide solution with a mass percentage concentration of 4% to remove the damaged layer on the surface of the diamond wire-cut polycrystalline original silicon wafer. The reaction tem...

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Abstract

The invention relates to a method for preparing a polycrystalline black silicon suede in a single-sided by a metal catalytic chemical etching method. The method is characterized by comprising the following steps: (1) stacking two original silicon chips, and inserting in a same clamping groove; (2) removing a surface damage layer, and neutralizing in an acid pickling manner; (3) depositing silver particles in a hydrofluoric acid solution containing silver nitrate by using the silicon chips, corroding by using the hydrofluoric acid and hydrogen peroxide mixed solution, and forming a nanoscale hole on the crystal surface; (4) soaking the corroded silicon chip in the hydrogen peroxide and ammonia water mixed solution, and removing residual silver particles; (5) chambering the silicon chip in achambering solution, and expanding the nanoscale hole formed by the crystal surface to form a submicron order hole; (6) alkali cleaning, acid pickling, and cleaning the silicon chips, and separatingthe every two stacked silicon chips; and (7) acid pickling and cleaning the separated silicon chips, and drying the silicon chips. The suede structure obtained by the method provided by the inventionenables a battery to have an excellent antireflection effect, and by combining a passivation layer with high surface quality, an effective black silicon solar cell can be prepared.

Description

technical field [0001] The invention relates to a method for preparing polycrystalline black silicon suede on one side by a metal-catalyzed chemical corrosion method, which belongs to the field of photoelectric technology. Background technique [0002] Due to the high cost of photovoltaic power generation, it still cannot replace traditional energy sources. Reducing costs and improving the conversion efficiency of solar cells are the keys for the photovoltaic industry to gradually replace traditional energy sources. At present, photovoltaic power generation products on the market are still dominated by polycrystalline solar cell components. Reducing the cost of polycrystalline solar cells and improving the conversion efficiency of polycrystalline cells are the key to cost reduction. [0003] Polycrystalline diamond wire-cut silicon wafers have the advantages of fast cutting speed, smaller wire loss compared to mortar cutting, thinner damage layer, more environmental protecti...

Claims

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Application Information

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IPC IPC(8): C30B33/10H01L31/0236C30B29/06
CPCC30B29/06C30B33/10H01L31/02366Y02E10/50
Inventor 凌俊陈丽萍肖博缪若文张云海沈家军孟庆蕾严婷婷陆红艳陈如龙
Owner WUXI SUNTECH POWER CO LTD
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