Method for manufacturing non-refrigerant thermal infrared detector based on black silicon material

Abstract

The invention discloses a method for manufacturing a non-refrigerant thermal infrared detector based on a black silicon material. The method comprises the following steps of: forming a thermosensitive diode on a silicon substrate or a silicon-on-insulator (SOI) substrate; depositing an amorphous silicon film on the surface of the thermosensitive diode, and performing sulfur element doping on the amorphous silicon film in an ultrafast laser irradiation mode or sulfur element ion implantation and ultrafast laser irradiation modes in the presence of sulfur elements to form a black silicon infrared absorbing layer; depositing a silicon nitride thin layer on the black silicon infrared absorbing layer to be used as a surface passivation layer; and preparing a metal conducting wire and a cantilever beam structure with a thermal insulation effect for the thermosensitive diode to form the non-refrigerant thermal infrared detector. In the method, the characteristics that the black silicon material has high infrared irradiation absorbability and is compatible with a micro-electronic processing process easily are fully utilized, and the manufactured thermal infrared detector has the advantages of high sensitivity and low cost and is easy to manufacture through an SOI complementary metal oxide semiconductor (CMOS) process and a CMOS process.

Description

technical field [0001] The invention relates to the technical field of uncooled thermal infrared detectors, in particular to a method for preparing an uncooled thermal infrared detector based on black silicon material. Background technique [0002] The essence of an uncooled infrared detector array is a MEMS device integrated with a thermal infrared detector pixel array. The uncooled MEMS infrared detector integrated infrared radiation absorption layer on the silicon temperature sensitive diode is one of the research hotspots in the field of uncooled infrared detector [1][6][7] . [0003] Since the advent of black silicon material, it has been close to the absorption effect of black body in the whole solar spectrum range. [2] And it has received widespread attention. In 2006, T.G.Kim et al. from Harvard University in the United States reported a super-infrared absorbing material that is supersaturated with sulfur on a silicon substrate to form a sub-band gap. [3] . In 20...

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Problems solved by technology

[0004] However, studies have found that the absorption of medium and long-wave infrared light by black silicon materials is mainly caused by defect energy levels. These defect energy levels will also become carrier recombination centers while absorbing infrared radiation, so that the absorbed infrared radiation cannot be directly absorbed. Converted into electrical signals, but converted into thermal energy of materials, so the high infrared radiation absorption characteristics of black silicon materials are not very meaningful for the preparation of photon infrared detectors

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