Inverted pyramid structure of polysilicon surface and fabrication method of inverted pyramid structure

An inverted pyramid and polysilicon technology, applied in the field of solar cells, can solve the problems of decreased solar cell efficiency, contamination of impurities on the surface, deep defects, etc., and achieves significant light trapping effect, reduced surface recombination, and easy reflectivity.

Inactive Publication Date: 2015-11-11
江苏辉伦太阳能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this original black silicon nano-light trapping structure usually has a small structure, dense, deep and many defects, and even impurities stain the surface. Although it has obvious optical advantages, it does not match the current manufacturing process of crystalline silicon solar cells.
If the black silicon structure is not optimized, it will lead to serious surface recombination and reduce the efficiency of solar cells

Method used

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  • Inverted pyramid structure of polysilicon surface and fabrication method of inverted pyramid structure
  • Inverted pyramid structure of polysilicon surface and fabrication method of inverted pyramid structure
  • Inverted pyramid structure of polysilicon surface and fabrication method of inverted pyramid structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A kind of manufacturing method of polycrystalline surface inverted pyramid structure texture, comprises the following steps:

[0030] Step 1. Select P-type polysilicon material with a size of 156cm*156cm and a thickness of 200mm. Place the polysilicon wafer in hydrofluoric acid and HNO 3 Corrosion in the mixed solution to remove the surface mechanical damage layer;

[0031] Step 2. Use metal ion assisted etching method to make black silicon, place the silicon wafer in the mixed solution of hydrofluoric acid and silver nitrate to deposit silver particles for 10s, the reaction temperature is 8°C, and then deposit the deposited polysilicon The sheet was placed in a mixed solution of hydrofluoric acid and hydrogen peroxide for 500s of chemical corrosion, and the reaction temperature was 60°C to obtain a nano-black silicon sample;

[0032] Step 3, then soak the black silicon sample in a mixture of ammonia water, hydrogen peroxide and ethanolamine for 60s at a reaction tempe...

Embodiment 2

[0039] A kind of manufacturing method of polycrystalline surface inverted pyramid structure texture, comprises the following steps:

[0040] Step 1. Select P-type polysilicon material with a size of 156cm*156cm and a thickness of 200mm. Place the polysilicon wafer in hydrofluoric acid and HNO 3 Corrosion in the mixed solution to remove the surface mechanical damage layer;

[0041] Step 2. Use metal ion assisted etching method to make black silicon, place polysilicon wafer in a mixed solution of hydrofluoric acid and silver nitrate to deposit silver particles for 50s, the reaction temperature is 20°C, and then deposit the deposited silicon The sheet was chemically etched in a mixed solution of hydrofluoric acid and hydrogen peroxide for 300s at a reaction temperature of 40°C to obtain a nano-sized black silicon sample;

[0042] Step 3, then soak the black silicon sample in a mixture of ammonia water, hydrogen peroxide and ethanolamine for 300s, and the reaction temperature is ...

Embodiment 3

[0049] A kind of manufacturing method of polycrystalline surface inverted pyramid structure texture, comprises the following steps:

[0050] Step 1. Select P-type polysilicon material with a size of 156cm*156cm and a thickness of 200mm. Place the polysilicon wafer in hydrofluoric acid and HNO 3 Corrosion in the mixed solution to remove the surface mechanical damage layer;

[0051] Step 2. Use metal ion assisted etching method to make black silicon, place polysilicon wafer in a mixed solution of hydrofluoric acid and silver nitrate to deposit silver particles for 50s, the reaction temperature is 20°C, and then deposit the deposited silicon The sheet was chemically etched in a mixed solution of hydrofluoric acid and hydrogen peroxide for 300s at a reaction temperature of 40°C to obtain a nano-sized black silicon sample;

[0052] Step 3, then soak the black silicon sample in a mixture of ammonia water, hydrogen peroxide and ethanolamine for 300s, and the reaction temperature is ...

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Abstract

The invention discloses an inverted pyramid structure of a polysilicon surface and a fabrication method of the inverted pyramid structure. The method comprises the following steps: preparing black silicon by different methods; rinsing a sample in a mixed liquid of hydrogen peroxide and ethanol amine; and carrying out retreatment on the washed black silicon in a mixed liquid of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, so as to form the inverted pyramid structure of the polysilicon surface. A wet-chemical method which is different from acid and alkaline corrosion is adopted. According to the method, the effects of anisotropy can be reduced to the maximal extent; and the black silicon with different nano-structures can be corroded into a nano textured structure with a regular inverted pyramid structure through oxidation. Compared with the traditional polycrystalline silicon texture, the polysilicon inverted pyramid light-trapping structure disclosed by the invention is relatively high in light utilization rate and relatively low in reflectivity, so that the polysilicon inverted pyramid light-trapping structure has the characteristics of the inverted pyramid structure; compared with the traditional high surface recombination of a small and dense structure of the black silicon, the surface recombination is obviously reduced; and the efficiency of a solar cell is higher.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to an inverted pyramid structure on the surface of polycrystalline silicon and a preparation method thereof. Background technique [0002] Conventional polysilicon textured surfaces are all micron-scale worm-like structures. Polycrystalline silicon textured surfaces are made by utilizing the anisotropic properties of silicon, and using acid corrosion to form a honeycomb structure on the surface, which has a certain light trapping effect and can reduce the surface of the silicon wafer. Reflectivity. [0003] There is also a new nano-light-trapping structure, which is generally called "black silicon", which has a good The light trapping effect can significantly reduce the reflectivity of the silicon wafer surface, and is considered to be a structure that can effectively improve the conversion efficiency of solar cells. At present, there are many laboratories that can prepare bla...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02363Y02E10/50Y02P70/50
Inventor 蒲天罗旌旺吴兢芮春保
Owner 江苏辉伦太阳能科技有限公司
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