High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and preparation method thereof

一种红外探测器、热电堆的技术,应用在红外探测器及其制备,高性能MEMS热电红外探测器及其制备领域,能够解决腐蚀气体破坏、保护、不能实现等问题,达到提高性能、工艺兼容性好、易于实现的效果

Active Publication Date: 2012-12-19
BEIJING ZHONGKE MICRO INVESTMENT MANAGEMENT CO LTD
View PDF2 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, black silicon still has the physical and chemical properties of silicon materials, so in the subsequent XeF 2 During the dry release process, it is easily damaged by corrosive gases; and because the nanostructures in black silicon have a certain height and high density, conventional methods, such as film deposition protection or glue coating protection, cannot achieve effective protection.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and preparation method thereof
  • High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and preparation method thereof
  • High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0060] Such as Figure 17 Shown: the black silicon-based high-performance MEMS pyroelectric infrared detector of the present invention includes a substrate 101; a release barrier band 2 is provided on the substrate 101, and a thermal isolation cavity 1403 is provided in the release barrier band 2, A black silicon infrared absorption region 1 is arranged directly above the thermal isolation cavity 1403, and the black silicon infrared absorption region 1 is located on the release barrier 2; several thermopiles are arranged outside the black silicon infrared absorption region 1, and the black silicon The thermopiles on the outside of the infrared absorption area 1 are connected in series and electrically connected into one body, and the thermopiles connected in series are provided with a metal electrode 8 for outputting the detection voltage; the thermopile corres...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
lengthaaaaaaaaaa
lengthaaaaaaaaaa
Login to view more

Abstract

The invention relates to a high-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and a preparation method thereof. The high-performance MEMS thermopile infrared detector comprises a substrate, wherein the substrate is provided with a release barrier strip, a heat isolation cavity is arranged in the release barrier strip, a black silicon infrared absorption region is arranged above the heat isolation cavity, thermopiles are arranged on the outer side of the black silicon infrared absorption region, after the thermopiles on the outer side of the black silicon infrared absorption region are connected in series, the thermopiles are electrically connected to a whole body, and the thermopiles, which are connected in series, are provided with metal electrodes for outputting a detection result; the detection cold ends of the thermopiles are connected with the substrate through a first heat conduction and electric isolation structure, and a heat conductor is located on the outer side of a heat isolation cavity; and the detection heat ends of the thermopiles are in contact with the black silicon infrared absorption region through a second heat conduction and electric isolation structure. The high-performance MEMS thermopile infrared detector, provided by the invention, has the advantages of simple and easy implementation, convenience for monolithic integration, high response rate and detection rate, compatibility with a CMOS (Complementary Metal Oxide Semiconductor) process, wide application range, safety and reliable.

Description

technical field [0001] The invention relates to an infrared detector and a preparation method thereof, in particular to a black silicon-based high-performance MEMS pyroelectric infrared detector and a preparation method thereof, belonging to the technical field of MEMS infrared detectors. Background technique [0002] MEMS thermopile infrared detector is a typical device in the field of sensing and detection. It is one of the core components of sensing and detecting devices such as temperature sensors, root mean square converters, gas sensors, and thermal flow meters. At the same time, Small-sized thermopile infrared detectors can also be used to build infrared focal plane array (FPA) devices to achieve infrared imaging. Compared with infrared detectors based on other working principles (such as pyroelectric infrared detectors and thermistor infrared detectors, etc.), thermopile infrared detectors have measurable constant radiation, no need to add bias voltage, no need to ch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/12B81C1/00
CPCG01J5/022G01J5/12H10N10/01H10N10/17H10N10/855B81B7/02B81B2201/0278B81C1/00111
Inventor 毛海央陈媛婧欧文明安杰
Owner BEIJING ZHONGKE MICRO INVESTMENT MANAGEMENT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products