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Method for preparing dye-sensitized solar cell compound light anode with zinc oxide nanometer structure

A zinc oxide nanometer, solar cell technology, applied in photosensitive devices, circuits, capacitors, etc., can solve problems such as low photoelectric conversion efficiency, and achieve the effects of low synthesis cost, simple process requirements, and good repeatability

Inactive Publication Date: 2010-08-11
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A possible solution is to use one-dimensional nanostructures, but such structures limit the photoelectric conversion efficiency to a relatively low level

Method used

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  • Method for preparing dye-sensitized solar cell compound light anode with zinc oxide nanometer structure
  • Method for preparing dye-sensitized solar cell compound light anode with zinc oxide nanometer structure
  • Method for preparing dye-sensitized solar cell compound light anode with zinc oxide nanometer structure

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Experimental program
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Embodiment 1

[0011] Embodiment 1, 1) zinc acetate dihydrate, monoethanol ammonia and deionized water are dissolved in ethylene glycol methyl ether at a molar ratio of 1: 1: 0.5 and the concentration of zinc acetate dihydrate made is 0.1mol / L Mix the solution, then seal the mixed solution and put it into a constant temperature water bath, and magnetically stir at a constant temperature of 60°C to obtain a transparent and uniform sol; 2) Use the spin coating process to deposit the above sol on the cleaned FTO Put the spin-coated substrate into a 200°C drying oven to dry, and finally anneal at 350°C for 2 hours to obtain a zinc oxide seed layer; 3) Dissolve zinc nitrate hexahydrate and sodium hydroxide in water to prepare Form a growth solution, the concentration of zinc nitrate hexahydrate in the growth solution is 0.02mol / L, the concentration of sodium hydroxide is 0.4mol / L, put the substrate coated with the zinc oxide seed crystal layer into the growth solution, and heat it at 60°C Treat a...

Embodiment 2

[0012] Embodiment 2, 1) zinc acetate dihydrate, monoethanol ammonia and deionized water are dissolved in ethylene glycol methyl ether at a molar ratio of 1: 1: 0.5 and the concentration of zinc acetate dihydrate is 0.5mol / L Mix the solution, then seal the mixed solution and put it into a constant temperature water bath, and magnetically stir at a constant temperature of 60°C to obtain a transparent and uniform sol; 2) Use the spin coating process to deposit the above sol on the cleaned FTO Put the spin-coated substrate into a drying oven at 250°C for drying, and finally anneal at 400°C for 1.5 hours to obtain a zinc oxide seed layer; 3) Dissolve zinc nitrate hexahydrate and sodium hydroxide in water to prepare Form a growth solution, the concentration of zinc nitrate hexahydrate in the growth solution is 0.02mol / L, the concentration of sodium hydroxide is 0.5mol / L, put the substrate coated with the zinc oxide seed crystal layer into the growth solution, and heat it at 70°C Tre...

Embodiment 3

[0013] Embodiment 3, 1) zinc acetate dihydrate, monoethanol ammonia and deionized water are dissolved in ethylene glycol methyl ether in the molar ratio of 1: 1: 0.5 and the concentration that makes zinc acetate dihydrate is 0.8mol / L Mix the solution, then seal the mixed solution and put it into a constant temperature water bath, and magnetically stir at a constant temperature of 60°C to obtain a transparent and uniform sol; 2) Use the spin coating process to deposit the above sol on the cleaned FTO Put the spin-coated substrate into a drying oven at 230°C for drying, and finally anneal at 380°C for 1 hour to obtain a zinc oxide seed layer; 3) Dissolve zinc nitrate hexahydrate and sodium hydroxide in water to prepare Form a growth solution, the concentration of zinc nitrate hexahydrate in the growth solution is 0.03mol / L, the concentration of sodium hydroxide is 0.6mol / L, put the substrate coated with the zinc oxide seed crystal layer into the growth solution, at 80 ℃ Treat at...

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Abstract

The invention relates to a method for preparing a dye-sensitized solar cell compound light anode with a zinc oxide nanometer structure, which adopts a one-dimensional zinc oxide nanowire array as an electronic transport layer, and a layer of multi-dispersed system zinc oxide microspheres is coated on the electronic transport layer and is used as a dye absorption and light scattering layer. The method comprises the following steps of: firstly, depositing a zinc oxide film on a FTO glass sheet by utilizing the sol-gel technology; secondly, growing a zinc oxide nanowire array on the zinc oxide film by adopting the hydrothermal self-assembly growth technology; and finally, coating a layer of multi-dispersed system zinc oxide microspheres grown by collochemistry self-assembly on the zinc oxide nanowire array to prepare the compound light anode with the zinc oxide nanometer structure, which has the advantages of low cost, simple process requirement, good repeatability, capability of performing large-scale preparation and high specific surface and light scattering properties.

Description

technical field [0001] The invention belongs to a nanostructure self-assembly growth method, in particular to a preparation method of a zinc oxide nanostructure dye-sensitized solar cell composite photoanode that uses a seed layer as a template to hydrothermally self-assemble and grow a nanostructure array. Background technique [0002] The competition between the generation and recombination of photogenerated carriers in solar cells is the main bottleneck to further improve the photoelectric conversion efficiency. A possible solution is to use one-dimensional nanostructures, but such structures limit the photoelectric conversion efficiency to a relatively low level. Another way to improve the photoelectric conversion efficiency is to use the light enhancement effect to increase the light yield of the photoelectrode film, which can be achieved by introducing a scattering medium into the photoelectrode film to induce light scattering. Scientists have proved the feasibility o...

Claims

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Application Information

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IPC IPC(8): H01G9/042H01G9/20H01M14/00H01L51/48
CPCH01G9/2059Y02E10/542H01G9/204Y02P70/50
Inventor 阙文修张进
Owner XI AN JIAOTONG UNIV
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