Preparation method of tin mixed with zinc oxide nanowire

A technology of tin-doped zinc oxide and nanowires, which is applied in the field of gas-phase preparation of tin-doped zinc oxide one-dimensional nanomaterials, which can solve the problems of reducing synthesis temperature and product purity
CN101045553AInactive Publication Date: 2007-10-03UNIV OF SCI & TECH BEIJING
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF SCI & TECH BEIJING
Publication Date
2007-10-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

A process for preparing the Sn doped zinc oxide nanowires includes such steps as flushing the Si substrate by detergent, proportionally mixing ZnO powder, SnO powder and C powder by ball grinding, putting said substrate and powder mixture in a ceramic crucible, loading it in a quartz tube of tubular furnace, filling the mixture of argon gas and O2, heating at 850-950 deg.C while reacting, and cooling.
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Description

technical field

[0001] The invention belongs to the technical field of nanomaterial preparation, and in particular provides a method for gas phase preparation of tin-doped zinc oxide one-dimensional nanomaterials. The synthesis process is simple and the yield is high, and the controllable growth at a relatively low preparation temperature is realized. Background technique

[0002] Zinc oxide is a direct bandgap, wide bandgap semiconductor, belonging to II-VI group compounds. At room temperature, ZnO has a band gap of about 3.37eV, high exciton binding energy (60meV), and piezoelectricity, and its photoelectric properties have good application prospects. At the same time, ZnO material is cheap, has sufficient raw materials, stable chemical properties, and good biocompatibility, so it can be used in optical materials, composite materials, sensors, catalysts and other fields. The special one-dimensional nanostructure of one-dimensional semiconductor ZnO nanomaterials endows Zn...

Claims

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