Preparation method of tin mixed with zinc oxide nanowire

A technology of tin-doped zinc oxide and nanowires, which is applied in the field of gas-phase preparation of tin-doped zinc oxide one-dimensional nanomaterials, which can solve the problems of reducing synthesis temperature and product purity

Inactive Publication Date: 2007-10-03
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Adding metal catalysts such as gold and cobalt during the preparation process can reduce the synthesis temperature, and the product shape and size are easier to control, but the product purity is greatly affected

Method used

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  • Preparation method of tin mixed with zinc oxide nanowire
  • Preparation method of tin mixed with zinc oxide nanowire
  • Preparation method of tin mixed with zinc oxide nanowire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Example 1: First, the silicon (100) substrate was ultrasonically cleaned in acetone and absolute ethanol for 20 minutes, and then rinsed with deionized water. Mix ZnO powder, SnO and C powder according to the atomic ratio of 4:1:5, ball mill for 2 hours, mix thoroughly and evenly, put them in a porcelain boat as raw materials, and place a silicon substrate on it. Then the ceramic boat is placed in the middle of the quartz tube in the tube furnace, and the flowmeter is adjusted to feed argon (98%) / oxygen (2%) mixed gas (300 sccm) into the tube. In this atmosphere, the temperature of the tube furnace was raised to 900° C. at a rate of 20° C. per minute and kept for 40 minutes. The off-white fluff deposited on the substrate was tin-doped zinc oxide nanowires.

Embodiment 2

[0017] Embodiment 2: on the silicon (100) substrate that cleans up, adopt the Ag of magnetron sputtering method to deposit 20nm as catalyst, the silicon substrate coated with catalyst is as substrate; ZnO, SnO and C powder press 1: 1: 2 Mix well and put it in the porcelain boat as the evaporation source, place the silicon chip on the porcelain boat, then put the porcelain boat into the middle of the quartz tube in the tube furnace; adjust the flow meter to feed Ar and O into the tube 2 Mixed gas 300cm 3 min -1 , the proportion of oxygen is 1%, the reaction temperature is 930°C, and the temperature is kept at this temperature for 30 minutes, and the gas is continued until the tube furnace is cooled to room temperature, and the silicon substrate is taken out to obtain the product.

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Abstract

A process for preparing the Sn doped zinc oxide nanowires includes such steps as flushing the Si substrate by detergent, proportionally mixing ZnO powder, SnO powder and C powder by ball grinding, putting said substrate and powder mixture in a ceramic crucible, loading it in a quartz tube of tubular furnace, filling the mixture of argon gas and O2, heating at 850-950 deg.C while reacting, and cooling.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular provides a method for gas phase preparation of tin-doped zinc oxide one-dimensional nanomaterials. The synthesis process is simple and the yield is high, and the controllable growth at a relatively low preparation temperature is realized. Background technique [0002] Zinc oxide is a direct bandgap, wide bandgap semiconductor, belonging to II-VI group compounds. At room temperature, ZnO has a band gap of about 3.37eV, high exciton binding energy (60meV), and piezoelectricity, and its photoelectric properties have good application prospects. At the same time, ZnO material is cheap, has sufficient raw materials, stable chemical properties, and good biocompatibility, so it can be used in optical materials, composite materials, sensors, catalysts and other fields. The special one-dimensional nanostructure of one-dimensional semiconductor ZnO nanomaterials endows Zn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/02C01G9/02B01J23/42B01J23/50B01J23/52B82B3/00
Inventor 张跃陈红升齐俊杰黄运华张晓梅廖庆亮
Owner UNIV OF SCI & TECH BEIJING
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