Manufacture and application method for graphene transistor and biosensor of graphene transistor

A biosensor and transistor technology, applied in instruments, scientific instruments, measuring devices, etc., can solve the problems of poor sensor selectivity, achieve high sensitivity, change resistance characteristics, and low noise

Inactive Publication Date: 2012-07-18
厦门思明银河整形外科门诊部有限公司
View PDF5 Cites 38 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] For the poor selectivity of graphene transistor sensors, a method for making biosensors based on graphene transistors is further proposed, a method for growing zinc oxide nanowires or metal nanoparticles on the surface of graphene transistors, and the nanomaterials on the surface of the transistors have It is conducive to the adso

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacture and application method for graphene transistor and biosensor of graphene transistor
  • Manufacture and application method for graphene transistor and biosensor of graphene transistor
  • Manufacture and application method for graphene transistor and biosensor of graphene transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Below in conjunction with accompanying drawing, the method for making graphene transistor of the present invention, the method for making the biosensor based on graphene transistor, and biosensor application method are further described:

[0031] 1. First, the preparation of graphene crystals. Taking the commonly used chemical vapor deposition method as an example, first deposit a 500nm-thick transition metal layer such as nickel or copper on a silicon oxide / silicon wafer, and use a gaseous organic compound containing carbon atoms such as methane (CH 4 ), acetylene (C 2 h 2 ) and hydrogen as the source of carbon, at a high temperature of 1000 ° C, gaseous organic matter containing carbon atoms is pyrolyzed on metal substrates such as nickel or copper, and the carbon atoms that remove hydrogen atoms are deposited and adsorbed on the metal surface to continuously grow into Graphene. Coat one layer of polymethyl methacrylate (PMMA) on the substrate of grown graphene as ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a manufacture and application method for a graphene transistor and a biosensor of the graphene transistor, which is low in price, avoids chemical pollution of the surface of the graphene transistor, and is suitable for integrated manufacture and mass production of the graphene transistor and the existing electronic devices. A method used for growing zinc oxide nanowires or metal nano-particles on the surface of the graphene transistor and based on the manufacture method for the biosensor of the graphene transistor is further provided. Nanometer materials on the surface of the transistor are favorable for absorbing biological active substances (such as enzyme, deoxyribonucleic acid (DNA), ribonucleic acid (RNA), aptamer, antigen or antibody) with special identification capacity. Therefore, a graphene transistor channel has capacity of absorbing target analyte selectively, and sensitivity and selectivity of a sensor based on the graphene transistor channel are improved.

Description

technical field [0001] The invention relates to the field of biosensor manufacturing, in particular to a graphene transistor and a method for making and applying the biosensor. Background technique [0002] Graphene is a single-atom planar two-dimensional crystal with extremely high electrical conductivity, thermal conductivity, and excellent mechanical strength. Graphene transistors have unique advantages in the field of high-sensitivity detection. Graphene has a very low noise signal when detecting gases, and can accurately detect individual gas molecules, making it a potential application prospect in the direction of chemical sensors and molecular probes. [0003] In view of the extremely broad application prospects of graphene, people are trying to find various ways to obtain it. Of course, the first thing that comes to mind is how to separate graphite layer by layer. Heim et al. first used the so-called "mechanical peeling method", which is to repeatedly paste and tea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N27/327
Inventor 游学秋卢家宾王晓诚
Owner 厦门思明银河整形外科门诊部有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap