Semiconductor sensor and production method

Abstract

The invention discloses a sensor for ultraviolet detection and a production method thereof. The semiconductor sensor of the invention is integrated by two electrodes, and a zinc oxide nanowire positioned between the two electrodes in a parallel way. The production method of the semiconductor sensor of the invention comprises the following steps of: firstly growing a layer of zinc oxide nanowire array which is vertical to a substrate surface on a first substrate, then transferring the zinc oxide nanowire array onto the surface of a second substrate, placing an electrode pattern on a masking film plate onto a gluing surface, making the electrode pattern be vertical to the two ends of the oriented nanowire and cover the end parts of the nanowire so as to carry out exposing, developing and photoetching, then depositing at least one electric conduction metal-made electrode in an electrode area which is formed by photoetching in a physical method, then stripping the electrodes and the nanowire from the second substrate, connecting leads onto the electrodes, and finally obtaining the required device.

Description

technical field [0001] The invention relates to a semiconductor sensor and a preparation method of the device. The semiconductor sensor described in the present invention refers to a sensor for ultraviolet detection. Background technique [0002] Ultraviolet detection is a new detection technology developed after infrared detection and laser detection, and has very broad application prospects in both military and civilian fields. In terms of military use, in the late 1980s, military research on ultraviolet technology has begun abroad, and certain progress has been made. The U.S. Navy’s C-130S helicopter and P-3S transport plane have the world’s first ultraviolet warning device AAR-47, and it was put into actual combat in the Gulf War in 1991. At present, the U.S. military is actively funding the development of new ultraviolet detectors. Only Magnolia Optical Technology Company has received 1.25 million US dollars of funding for research in this area, see Kebian, "Aerospace...

AI Technical Summary

Problems solved by technology

First, the response current changes caused by photon irradiation are very small, requiring expensive instruments to detect tiny current signals

Secondly, after the photons irradiate the semiconductor, the response and recovery time is long, which makes the detection inconvenient

For the first difficulty, the current solution is roughly as follows. R.S.Aga.Jr et al. modified the surface of zinc oxide nanowires with CdTe quantum dots, which made the photoresponse curve roughly increased by less than 5nA. Although the photoresponse current has increased, but Probing currents at the nA level requires very expensive instruments, see R.S.Aga, Jr et.al, Appl.Phys.Lett.91, 232108 (2007)

J.H.He et al. functionalized the surface of ZnO nanobelts, and greatly increased the electrical signal intensity to 100 times that of the baseline. However, since the baseline is almost zero, the actual electrical signal after photon irradiation is still very weak, and the functional The process of chemicalization is cumbersome, which is not conducive to large-scale application, see J.H.He, J.Appl.Phys.102, 084303 (2007)

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