Ultra-fine zinc oxide nonometer line and its preparation method
A zinc oxide nanowire, nanowire technology, applied in the direction of zinc oxide/zinc hydroxide, etc., achieves the effects of easy large-area synthesis, reduced production cost, simple and easy operation process
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[0016] Example 1
[0017] First, the gold-plated n-type heavily doped silicon substrate was ultrasonically cleaned in acetone and alcohol for 10 minutes, and then rinsed with deionized water. The silicon wafer and the zinc evaporation source are placed on the glass wafer, and the horizontal distance between the two is 7mm. Place the glass slide in the middle of the tube furnace with the evaporation source in the direction of the air inlet. The system was evacuated and filled with argon for cleaning three times. Then charge 135 standard ml / min of high purity Ar 2 As a protective atmosphere, the pressure in the reaction chamber is 0.03 MPa. The temperature of the reaction chamber was increased to 500°C at a temperature increase rate of 20°C / min. Keep high purity Ar at this time 2 At the same time, 1 standard ml / min of argon-oxygen mixed gas (O 2 / Ar: 5%), the temperature is lowered to room temperature after 100 minutes of reaction. Take out the silicon wafer and deposit a layer of w...
Example Embodiment
[0018] Example 2
[0019] First, the gold-plated n-type heavily doped silicon substrate was ultrasonically cleaned in acetone and alcohol for 10 minutes, and then rinsed with deionized water. The silicon wafer and the zinc evaporation source are placed on the glass plate, and the horizontal distance between the two is 6mm. Put the glass slide in the middle of the tube furnace with the evaporation source in the direction of the air inlet. The system was evacuated and filled with argon for cleaning three times. Then fill with 140 standard ml / min of high purity Ar 2 As a protective atmosphere, the pressure in the reaction chamber is 0.05 MPa. The temperature of the reaction chamber was increased to 460°C at a heating rate of 15°C / min. Keep high purity Ar at this time 2 At the same time, 2 standard ml / min of argon-oxygen mixed gas (O 2 / Ar: 5% by volume), the temperature is lowered to room temperature after 150 minutes of reaction. Take out the silicon wafer and deposit a layer of whi...
Example Embodiment
[0020] Example 3
[0021] First, the gold-plated n-type heavily doped silicon substrate was ultrasonically cleaned in acetone and alcohol for 10 minutes, and then rinsed with deionized water. The silicon wafer and the zinc evaporation source are placed on the glass plate, and the horizontal distance between the two is 8mm. Place the glass slide in the middle of the tube furnace with the evaporation source in the direction of the air inlet. The system was evacuated and filled with argon for cleaning three times. Then fill with 150 standard ml / min of high purity Ar 2 As a protective atmosphere, the pressure in the reaction chamber is 0.03MPa. The temperature of the reaction chamber was increased to 540°C at a temperature increase rate of 10°C / min. Keep high purity Ar at this time 2 At the same time, 1 standard ml / min of argon-oxygen mixed gas (O 2 / Ar: 4%), the temperature is lowered to room temperature after 100 minutes of reaction. Take out the silicon wafer and deposit a layer of...
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