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Ultra-fine zinc oxide nonometer line and its preparation method

A zinc oxide nanowire, nanowire technology, applied in the direction of zinc oxide/zinc hydroxide, etc., achieves the effects of easy large-area synthesis, reduced production cost, simple and easy operation process

Inactive Publication Date: 2006-07-12
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is necessary to find a simpler and more effective method to prepare a ZnO nanomaterial, which can not only solve the problems of controllability and large-area low-cost synthesis in nano-ZnO applications, but also avoid the shielding caused by arrays. effect

Method used

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  • Ultra-fine zinc oxide nonometer line and its preparation method
  • Ultra-fine zinc oxide nonometer line and its preparation method
  • Ultra-fine zinc oxide nonometer line and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0017] First, the n-type heavily doped silicon substrate coated with gold film was ultrasonically cleaned in acetone and alcohol for 10 minutes, and then rinsed with deionized water. The silicon wafer and the zinc evaporation source are placed on the glass wafer with a horizontal distance of 7 mm. Place the slide in the middle of the tube furnace with the evaporation source in the direction of the gas inlet. The system was evacuated and purged three times with argon. Then fill with 135 standard ml / min of high-purity Ar 2 As a protective atmosphere, the pressure in the reaction chamber is 0.03MPa. The temperature of the reaction chamber was raised to 500°C at a temperature increase rate of 20°C / min. Maintain high purity Ar at this time 2 flow rate, while introducing 1 standard ml / min of argon-oxygen mixed gas (O 2 / Ar: 5%), after 100 minutes of reaction, it was cooled to room temperature. The silicon wafer was removed and a layer of white product was deposited on it. The...

Embodiment 2

[0019] First, the n-type heavily doped silicon substrate coated with gold film was ultrasonically cleaned in acetone and alcohol for 10 minutes, and then rinsed with deionized water. The silicon wafer and the zinc evaporation source are placed on the glass wafer with a horizontal distance of 6 mm. Place the slide in the middle of the tube furnace with the evaporation source in the direction of the gas inlet. The system was evacuated and purged three times with argon. Then fill with 140 standard ml / min of high-purity Ar 2 As a protective atmosphere, the pressure in the reaction chamber is 0.05MPa. The temperature of the reaction chamber was raised to 460°C at a ramp rate of 15°C / min. Maintain high purity Ar at this time 2 flow rate, while introducing 2 standard milliliters / minute of argon-oxygen mixed gas (O 2 / Ar: 5 volume %), after 150 min of reaction, it was lowered to room temperature. The silicon wafer was removed and a layer of white product was deposited on it. Th...

Embodiment 3

[0021] First, the n-type heavily doped silicon substrate coated with gold film was ultrasonically cleaned in acetone and alcohol for 10 minutes, and then rinsed with deionized water. The silicon wafer and the zinc evaporation source are placed on the glass wafer with a horizontal distance of 8 mm. Place the slide in the middle of the tube furnace with the evaporation source in the direction of the gas inlet. The system was evacuated and purged three times with argon. Then fill with 150 standard ml / min of high-purity Ar 2 As a protective atmosphere, the pressure in the reaction chamber is 0.03MPa. The temperature of the reaction chamber was raised to 540°C at a temperature increase rate of 10°C / min. Maintain high purity Ar at this time 2 flow rate, while introducing 1 standard ml / min of argon-oxygen mixed gas (O 2 / Ar: 4%), after 100 minutes of reaction, it was cooled to room temperature. The silicon wafer was removed and a layer of white product was deposited on it. The...

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Abstract

The invention discloses an ultra-fine unoriented zinc oxide nanometer wire and making method in the semiconductor nanometer material technique domain, which comprises the following steps: cleaning n-typed heavy silicon piece in the acetone and alcohol for 25-30 min by ultrasound; deposing a 0.5-2 nm thickness layer of gold plating catalyst film on the silicon piece through electronic beam evaporation method; taking the silicon piece with gold plating film as the receiving substrate and high-pure zinc powder as the evaporation source; putting the substrate and evaporation source on the glass; placing the glass in the pipe-typed furnace; charging high-pure Ar2 in the vacuumed pipe-typed furnace as the protecting atmosphere; heating the temperature at 460-540 deg.c at the speed of 10-20 deg.c per min; reacting for 100-150 min; reducing the reactant temperature to the room temperature protected by Ar2. The invention realizes the controllability and low cost synthesis of nanometer ZnO, which avoids the shielding effect due to array.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanometer materials, in particular provides an ultrafine zinc oxide nanowire and a preparation method thereof, and can obtain excellent field emission performance. Background technique [0002] The field emission characteristics of wide bandgap semiconductor zinc oxide (ZnO, Eg=3.37eV) materials have been reported as early as the 1960s and 1970s. For example, in 1978, Rihon and Marien studied the field emission electron energy spectrum of ZnO and the field analysis of ZnO surface under high field strength. However, since ZnO has a high exciton binding energy (60meV) and a large optical gain factor (300cm -1 ), people pay more attention to the use of ZnO in the production of short-wave light-emitting diodes and laser diodes, and in the application of transparent conductive films, chemical sensors and varistors, etc., but the research on the field emission characteristics of ZnO is not system...

Claims

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Application Information

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IPC IPC(8): C01G9/02
Inventor 常永勤
Owner UNIV OF SCI & TECH BEIJING
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