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Method for directly growing carbon nanotube film on substrate in partitioned mode and application

A carbon nanotube film and technology of carbon nanotubes, applied in the direction of carbon nanotubes, nanocarbons, chemical instruments and methods, etc., can solve the problem of limiting the application range of carbon nanotube field emission cathodes, the inability to arbitrarily control the area of ​​carbon nanotube films and shape etc.

Inactive Publication Date: 2020-12-04
WENZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the carbon nanotube film is prepared by the direct growth method, which is completely covered and grown on the substrate surface, and the area and shape of the carbon nanotube film cannot be controlled arbitrarily, which limits the application range of the carbon nanotube field emission cathode.

Method used

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  • Method for directly growing carbon nanotube film on substrate in partitioned mode and application
  • Method for directly growing carbon nanotube film on substrate in partitioned mode and application
  • Method for directly growing carbon nanotube film on substrate in partitioned mode and application

Examples

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Embodiment 1

[0038] Such as figure 1 Shown, carry out the method for directly growing circular 2.5mm diameter carbon nanotube field emission cathode film on nickel-containing metal substrate in this CVD reaction device, comprise the following steps:

[0039] (1) Carry out chemical and ultrasonic cleaning to the nickel-containing metal base, and the nickel-containing metal base of the present embodiment is stainless steel;

[0040] (2) Carry out anodization treatment to nickel-containing metal substrate, select acidic solution, nickel-containing metal substrate is positive electrode, select corrosion-resistant conductor (Pt) as negative electrode, add a fixed voltage of 1V between the two electrodes for a certain period of time <10 minutes, Chemical and ultrasonic cleaning of nickel-containing metal substrates after anodizing;

[0041] (3) The pre-designed and processed 2.5mm circular mask is placed in the center of the substrate, and the substrate and the mask are placed in a physical vap...

Embodiment 2

[0045] Such as figure 1 As shown, the method for directly growing the CNT field emission electron source of the array carbon nanotube field emission cathode film and the counter grid on the nickel-containing metal substrate in the CVD reaction device includes the following steps:

[0046] (1) Carry out chemical and ultrasonic cleaning to the nickel-containing metal substrate, and the nickel-containing metal substrate in this embodiment is Hastelloy;

[0047] (2) Pre-designed and processed rhombic array mask sheet ( Figure 3b) is covered on a rectangular (4×10mm) substrate, and the substrate and mask are placed in a physical vapor deposition coating system to deposit a 1 micron metal zirconium film. After the deposition, take out the substrate and remove the mask;

[0048] (3) CNT array film growth. A CVD reaction device is set, and the chemical vapor phase reaction growth of the carbon nanotube is performed on the nickel-containing metal substrate deposited with the zircon...

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Abstract

The invention discloses a method for directly growing a carbon nanotube film on a substrate in a partitioned mode and an application. The method comprises the following steps: (1) carrying out chemical or / and ultrasonic surface treatment on the substrate containing a catalytic metal; (2) processing a mask sheet with a corresponding shape according to the surface shape of the carbon nanotube film to be grown according to requirements; (3) covering the substrate with the mask sheet, and depositing a metal or metal oxide film without a carbon nanotube growth catalytic characteristic on the substrate subarea part which is not covered with the mask sheet by applying a film deposition process; and enabling a subarea, corresponding to the covering part of the mask sheet, of the substrate to forma carbon nanotube growth subarea; and (4) putting the substrate treated in the step (3) into a chemical vapor deposition reaction device, and growing a carbon nanotube film on the carbon nanotube growth subarea of the substrate through a direct growth method. The method has the advantages that the CNT film with any shape and size can be prepared, and the size of the film can be in the micron orderto the centimeter order.

Description

technical field [0001] The invention relates to a preparation method of a carbon nanotube thin film, in particular to a method and application of directly growing a carbon nanotube thin film in zones on a substrate. Background technique [0002] Carbon nanotubes (CNTs) have excellent physical, electronic, and structural properties. Field emission cathodes based on carbon nanotube films have become one of the main research and application objects of CNTs. Carbon nanotube field emission has the advantages of low emission field strength, small thermal radiation, fast response speed, and high current density. Mass spectrometry and other fields have been extensively researched and applied. [0003] There are many different preparation methods for carbon nanotube field emission cathodes, including preparing CNT films on conductive substrates by chemical vapor deposition (CVD), screen printing, electrophoresis, etc., and combining them with electron emission grids or anodes to pro...

Claims

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Application Information

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IPC IPC(8): C01B32/162C01B32/16H01J1/304
CPCC01B2202/22C01B32/16C01B32/162H01J1/304
Inventor 董长昆黄卫军
Owner WENZHOU UNIVERSITY
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