Method for manufacturing bipolar transistor

Abstract

The invention relates to a method for manufacturing a bipolar transistor, which comprises the following steps of: forming a complementary metal oxide semiconductor (CMOS) gate; performing low pressure deposition to form a tetraethoxysilane layer on the gate; performing a sidewall soft corrosion process, etching the tetraethoxysilane layer and repairing silicon wafer surface defects caused by the etching; and forming a CMOS source and a CMOS drain. In the method, a film layer forming a sidewall is etched and the silicon wafer surface defects caused by the etching are repaired, so a current workspace is increased and the current gain of the vertical NPN bipolar transistor is greatly improved.

Description

【Technical field】 [0001] The invention relates to a manufacturing method of a bipolar transistor, in particular to a manufacturing method capable of improving the current gain of the bipolar transistor. 【Background technique】 [0002] In the traditional submicron analog complementary metal-oxide semiconductor (Analog CMOS) process, the base region of the bipolar transistor (Bipolar) is formed by the P-type base layer (P-base), and the source-drain injection layer increases the bipolar transistor accordingly. The emitter is implanted, and the collector of the bipolar transistor is formed by the substrate, thereby forming a vertical NPN (N+ / P-base / N-Well) bipolar transistor. [0003] During the process, the formation process of the sidewall (Spacer) is before the formation of the CMOS source and drain (simultaneously implanting the emitter of the bipolar transistor), so the surface of the bipolar transistor device will be strongly bombarded by the plasma in the sidewall etchin...

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Problems solved by technology

[0005] In view of this, it is necessary to address the shortcomings of the above-mentioned high-temperature thermal annealing method for repairing lattice surface defects that can not optimize the performance of bipolar transistors without affecting the performance of other devices, and provide a method that can improve bipolar transistors. Method for manufacturing bipolar transistor with current gain

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