5results about How to "Breakdown field strength" patented technology

The application discloses a dielectric breakdown field strength and temperature dependence simulation method and system, and the simulation method comprises the following steps: establishing a criterion for polymer damage caused by molecular chain slip under the action of heat based on a free volume theory; establishing a breakdown criterion for polymer damage caused by molecular chain slip under the joint action of an electric field and a thermal field; quantifying the serpentine movement of a molecular chain under the action of a strong force; establishing an approximate analytical expression of polymer breakdown strength; and fitting the experimental results of sample breakdown field strength change with temperature according to the analytical expression by using a Curve fitting tool of Matlab. The breakdown model established from the perspective of molecular chain displacement can well explain the change relationship between the polymer nanocomposite dielectric breakdown field strength and temperature, and provides theoretical guidance for the preparation of high-temperature dielectric materials.

The invention provides a high-k gate dielectric composite material, a preparation method thereof and a beta-Ga2O3 MOS (Metal Oxide Semiconductor) power device. The composite material comprises a beta-Ga2O3 substrate; the SiO2 interface buffer layer is formed on at least one surface of the beta-Ga2O3 substrate; the Al2O3 transition layer is formed on the surface of the SiO2 interface buffer layer; the AlON interface layer is formed on the surface of the Al2O3 transition layer; and the HfO2 high-k main dielectric layer is formed on the surface of the AlON interface layer. Experimental results show that the composite material provided by the invention has a dielectric constant of 15-30, a forbidden bandwidth of greater than 5eV, an interface state density of less than 1 * 10 < 12 > cm <-2 > eV <-1 > and a breakdown field strength of 7MV / cm-15MV / cm, can effectively improve the interface characteristics of a beta-Ga2O3 MOS power device when being used for the beta-Ga2O3 MOS power device, improves the reliability of a gate medium, and is suitable for being applied to high-voltage and high-temperature power devices.

The invention relates to a silicon carbide gate oxide layer, a preparation method thereof and a semiconductor device. The preparation method of the silicon carbide gate oxide layer comprises the following steps: performing oxidation treatment on a silicon carbide epitaxial wafer in a nitrogen-containing atmosphere, and preparing a gate oxide film on the surface of the silicon carbide epitaxial wafer to form a first structure; performing bias temperature stress treatment on the first structure to prepare a second structure; performing wet etching on the second structure to prepare a third structure; and carrying out annealing treatment on the third structure. According to the preparation method of the silicon carbide gate oxide layer, a gate oxide film with low effective charge density and high breakdown field strength can be obtained. The semiconductor device prepared by using the silicon carbide gate oxide layer can have more stable threshold voltage.

The invention belongs to the technical field of capacitor films, and relates to a polypropylene capacitor film and a preparation method and application thereof. The polypropylene capacitor film comprises a layer C, a layer B, a layer A, a layer B and a layer C. The layer A comprises, by mass, 94-98 wt% of polypropylene and 2-6 wt% of an olefin block copolymer; the layer B comprises the following components in percentage by weight: 98.5 to 99.5 percent of polypropylene and 0.5 to 1.5 percent of olefin block copolymer; the layer C is prepared from 87 to 98.7 weight percent of polypropylene, 1 to 10 weight percent of aliphatic-aromatic polycarbonate and 0.3 to 3 weight percent of compatilizer; the content of the olefin block copolymer is gradually reduced from the A layer to the B layer, and the C layer is not added with the olefin block copolymer. The prepared polypropylene capacitor film has excellent high and low temperature breakdown field strength and low thermal shrinkage rate, and meets the use requirements of high-end electric power equipment.

This invention discloses a polynorbornene imide insulating material, its preparation method, and its applications, belonging to the technical field of electrical insulation materials and their preparation. This invention solves the problem of poor insulation performance in existing polynorbornene imide dielectric films. This invention obtains FPNI by fluorinating polynorbornene imide (PNI), a polymer dielectric film with a wide bandgap and a high glass transition temperature organic rigid backbone. Furthermore, by doping FPNI with the wide bandgap organic molecule 4,4-dihydroxydicyclohexane (OH), not only is hydrogen bonding crosslinking between hydroxyl and fluorine atoms achieved, but the wide bandgap OH also brings higher electronic transition energy levels, resulting in a crosslinked polymer film with excellent insulation performance and a breakdown field strength of 619.53 MV / m.