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Bismuth ferrite-based ternary solid solution dielectric film material and preparation method thereof

A technology of dielectric film and solid solution, which is applied in the field of bismuth ferrite-based ternary solid solution dielectric film materials and its preparation, can solve the problems of low energy storage density, achieve high energy storage efficiency, excellent energy storage performance, large dielectric The effect of the electric constant

Active Publication Date: 2019-06-21
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, traditional barium titanate (BaTiO 3 )-based dielectric materials have much lower polarization than lead-containing dielectric materials, and their energy storage density is relatively low

Method used

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  • Bismuth ferrite-based ternary solid solution dielectric film material and preparation method thereof
  • Bismuth ferrite-based ternary solid solution dielectric film material and preparation method thereof
  • Bismuth ferrite-based ternary solid solution dielectric film material and preparation method thereof

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preparation example Construction

[0053] According to the method for preparing a bismuth ferrite-based ternary solid solution film for high-density dielectric energy storage according to an embodiment of the present invention, Bi 2 o 3 , Fe 2 o 3 、BaCO 3 , SrCO 3 and TiO 2 The raw materials are mixed according to the selected stoichiometric ratio, ball milled, dried and sieved to obtain the raw material powder of bismuth ferrite-based ternary solid solution dielectric film, Bi 2 o 3 The excess of raw materials can make up for the volatilization loss of Bi element in the subsequent preparation process. A uniform and dense bismuth ferrite-based ternary solid solution ceramic green body can be obtained by pre-calcining the raw material powder, secondary ball milling, granulation, tableting, and cold isostatic pressing. By burying and sintering the green body, a bismuth ferrite-based ternary solid solution ceramic target with high density, low porosity and low Bi volatilization can be obtained. By subjecti...

Embodiment 1

[0058] Raw material Bi 2 o 3 , Fe 2 o 3 、BaCO 3 , SrCO 3 and TiO 2 By (1-x-y)BiFeO 3 -xBaTiO 3 -ySrTiO 3 (x=0.3, y=0.45) carry out batching, wherein Bi 2 o 3 Raw material excess 10%. The raw material is ball milled with absolute ethanol for 8 hours, dried and sieved, and the obtained powder is pre-fired at 800 degrees Celsius for 2 hours. Dry the obtained powder after secondary ball milling for 8 hours, add polyvinyl alcohol solution with a concentration of 5% (mass percentage) to granulate, press it into a tablet under a 12MPa tablet press, and then use 25MPa cold isostatic pressure to maintain pressure for 10 minutes , Obtain a disc embryo body with a diameter of about 1 inch and a thickness of about 5 mm. After heat preservation and removal of polyvinyl alcohol, the green disc body was buried and fired at 1100 degrees Celsius for 2 hours to obtain a high-quality bismuth ferrite-based ternary solid solution ceramic target.

[0059] The pulsed laser bombards the ...

Embodiment 2

[0062] Raw material Bi 2 o 3 , Fe 2 o 3 、BaCO 3 , SrCO 3 and TiO 2 By (1-x-y)BiFeO 3 -xBaTiO 3 -ySrTiO 3 (x=0.2, y=0.45) carry out batching, wherein Bi 2 o 3 Raw material excess 15%. The raw material is ball milled with absolute ethanol for 8 hours, dried and sieved, and the obtained powder is pre-fired at 780 degrees Celsius for 2 hours. Dry the obtained powder after secondary ball milling for 8 hours, add polyvinyl alcohol solution with a concentration of 5% (mass percentage) to granulate, press it into a tablet under a 12MPa tablet press, and then use 25MPa cold isostatic pressure to maintain pressure for 10 minutes , Obtain a disc embryo body with a diameter of about 1 inch and a thickness of about 5 mm. After heat preservation and removal of polyvinyl alcohol, the green disc body was buried and fired at 1080 degrees Celsius for 1.5 hours to obtain a high-quality bismuth ferrite-based ternary solid solution ceramic target.

[0063] The pulsed laser bombards th...

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Abstract

The invention provides a bismuth ferrite-based ternary solid solution dielectric film material and a preparation method thereof and belongs to the technical field of dielectric materials. The chemicalcomponent general formula is (1-x-y)BiFeO3-xBaTiO3-ySrTiO3, wherein x and y are molar fractions, and x is greater than 0 and less than 1, y is greater than 0 and less than 1 and x+y is greater than 0and less than 1. The preparation method comprises the steps of mixing raw materials of Bi2O3, Fe2O3, BaCO3, SrCO3 and TiO2 according to a selected chemical metering ratio to obtain a raw material powder; presintering the raw material powder to obtain a ceramic blank; burying and sintering the blank to obtain a ceramic target material; finally carrying out pulsed laser deposition and annealing treatment on the ceramic target material so that the bismuth ferrite-based ternary solid solution dielectric film material can be obtained. Experiments prove that the breakdown field strength of the bismuth ferrite-based ternary solid solution dielectric film material can reach 3.0-5.3 MV / cm, the energy storage density of the bismuth ferrite-based ternary solid solution dielectric film material can reach 112 J / cm<3>, the energy storage efficiency of the bismuth ferrite-based ternary solid solution dielectric film material is about 80%; the bismuth ferrite-based ternary solid solution dielectric film material is a novel environmentally friendly lead free dielectric material with excellent properties such as higher dielectric constant, smaller dielectric loss, strong polarization, high breakdown and high energy storage density.

Description

technical field [0001] The invention relates to a bismuth ferrite-based ternary solid solution dielectric film material and a preparation method thereof, belonging to the technical field of dielectric materials. Background technique [0002] As an important energy storage device, capacitors based on dielectric materials have the characteristics of extremely fast discharge speed, ultra-high power density, high voltage resistance, and long working life, so they are widely used in electronic circuits, electrical systems, pulse power technology and other fields. However, the energy storage density of general dielectric materials is low, and the energy storage density of the current commercialized dielectric materials (biaxially oriented polypropylene) is only about 1J / cm 3 , which is one to two orders of magnitude lower than lithium batteries or fuel cells, and cannot meet the needs of advanced electronic power systems for integration and miniaturization. Therefore, the develo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622C04B35/626H01G4/12
Inventor 林元华潘豪沈洋南策文
Owner TSINGHUA UNIV
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