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Niobium-silicon-based glass energy storage material with high energy storage density and preparation and application thereof

A technology of high energy storage density and energy storage materials, which is applied in the field of dielectric energy storage materials, can solve problems such as breakdown reduction, and achieve the effects of excellent breakdown resistance, high energy storage density, and good machining performance

Inactive Publication Date: 2017-05-24
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the glass-ceramic material prepared by controlled crystallization has a high dielectric constant, its breakdown is also greatly reduced. The best breakdown strength is 1020.47kV / cm, and its maximum energy storage density can reach 5.67J / cm 3 , still relatively low

Method used

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  • Niobium-silicon-based glass energy storage material with high energy storage density and preparation and application thereof
  • Niobium-silicon-based glass energy storage material with high energy storage density and preparation and application thereof
  • Niobium-silicon-based glass energy storage material with high energy storage density and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] (1) BaCO with a purity greater than 99.95wt% 3 , Nb 2 o 5 and SiO 2 For raw material batching, the molar percentages of the above components are 32%, 32% and 36%. After adding alcohol to moisten and ball mill the mixture for 24 hours, dry it, and melt it at 1520°C for 3 hours;

[0034] (2) The high-temperature melt obtained in step (1) is clarified at 1520° C. for 2 hours, poured into a metal mold, and annealed for stress relief at 600° C. for 5 hours to prepare a niobium-silicon-based glass-ceramic energy storage material with high energy storage density;

[0035] (3) Cutting the glass prepared in step (2) to obtain glass flakes with a thickness of 0.9 mm.

[0036] The Raman spectrum of the sample that present embodiment makes is as figure 2 As shown, the dielectric properties are as image 3 As shown, the withstand voltage performance test is as follows Figure 4 As shown, the energy storage density is shown in Table 1.

Embodiment 2

[0038] (1) BaCO with a purity greater than 99.95wt% 3 , Li 2 CO 3 , Nb 2 o 5 and SiO 2For raw material ingredients, the molar percentages of the above components are 25.6%, 6.4%, 32% and 36%. After ball milling for 24 hours, dry and melt at 1500°C for 3 hours;

[0039] (2) pour the high-temperature melt obtained in step (1) into a metal mold after being clarified at 1500°C for 2 hours, and then stress-relief annealed at 600°C for 5 hours to prepare a niobium-silicon-based glass-ceramic energy storage material with high energy storage density;

[0040] (3) Cutting the glass prepared in step (2) to obtain glass flakes with a thickness of 0.9 mm.

[0041] The Raman spectrum of the sample that present embodiment makes is as figure 2 As shown, the dielectric properties are as image 3 As shown, the withstand voltage performance test is as follows Figure 4 As shown, the energy storage density is shown in Table 1.

Embodiment 3

[0043] (1) BaCO with a purity greater than 99.95wt% 3 、Na 2 CO 3 , Nb 2 o 5 and SiO 2 For raw material ingredients, the molar percentages of the above components are 25.6%, 6.4%, 32% and 36%. After ball milling and mixing for 24 hours, dry and melt at 1520°C for 3 hours;

[0044] (2) The high-temperature melt obtained in step (1) is clarified at 1520° C. for 2 hours, poured into a metal mold, and annealed for stress relief at 600° C. for 5 hours to prepare a niobium-silicon-based glass-ceramic energy storage material with high energy storage density;

[0045] (3) Cutting the glass prepared in step (2) to obtain glass flakes with a thickness of 0.9 mm.

[0046] The XRD of the sample that present embodiment makes is as figure 1 As shown, the Raman spectrum is shown as figure 2 As shown, the dielectric properties are as image 3 As shown, the withstand voltage performance test is as follows Figure 4 As shown, the energy storage density is shown in Table 1.

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Abstract

The invention relates to a niobium-silicon-based glass energy storage material with the high energy storage density and preparation and application thereof. Batching is conducted according to the mole ratio 25.6:6.4:32:36 of BaO to R(2)O to Nb2O5 to SiO2, wherein R is alkali metal or alkaline-earth metal; BaCO3, R2CO3, Nb2O5 and SiO2 are weighed, ball-milled and mixed to be uniform, high-temperature melting is conducted, and a high-temperature melt is obtained; after being clarified for a period time at constant temperature, the high-temperature melt is poured into a preheated metal mold, quenching molding and stress relief annealing are conducted, and then the niobium-silicon-based glass energy storage material with the high energy storage density is obtained; the obtained glass is cut into sheets with the thickness of 0.9-1.2 mm, grinding and polishing are conducted, and the obtained sheets can be applied to an energy storage capacitor material. Compared with the prior art, the preparation technology is simple, the complex aftertreatment step is not needed, the prepared glass energy storage material has the high dielectric constant of 17-23, the average breakdown-resistant field strength is 2,600-3,420 kV / cm, the energy storage density of the material is 6.7-11.1 J / cm<3>, and the material can be applied to the energy storage capacitor material.

Description

technical field [0001] The invention relates to the field of dielectric energy storage materials, in particular to a niobium-silicon-based glass energy storage material with high energy storage density and its preparation and application. Background technique [0002] With the continuous consumption of fossil fuels and increasing energy demand, the energy crisis is approaching, and the development of new energy and energy storage has attracted much attention. Energy storage requires both the energy storage density and utilization efficiency of energy storage devices. Therefore, energy storage materials and devices with excellent performance have become the focus of material science research. [0003] Energy storage capacitors have become commonly used high energy storage circuit components due to their advantages such as high energy storage density, high utilization rate, fast charging and discharging speed, and stable performance, and have become the main energy storage com...

Claims

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Application Information

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IPC IPC(8): C03C10/00C03C4/16H01G9/025
CPCC03C10/00C03C4/16H01G9/025
Inventor 翟继卫刘静然杨科
Owner TONGJI UNIV
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