Preparation method of dielectric material for high energy storage capacitor

A technology of dielectric materials and capacitors, applied in the direction of fixed capacitor dielectrics and components of fixed capacitors, to achieve the effects of simple equipment, uniform particles, and high breakdown field strength

Active Publication Date: 2018-11-23
滨州高新高端装备制造产业园有限公司
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Metal ions have good conductivity. Adding a small amount of conductive particles to polymer dielectric materials can effectively improve its dielectric properties. Carbon material particles have high conductivity, and a low dosage can greatly increase the dielectric constant of the polymer. , but whether it is inorganic ceramic materials, metal particles or carbon material particles, there is a shortcoming that they are easy to agglomerate in the matrix. Therefore, improving the compatibility between fillers and polymers is the current research focus of polymer-based dielectric materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The preparation method of the dielectric material for high energy storage capacitors in this embodiment, the specific steps are as follows:

[0025] 1) Nano-ZnO particles are placed in a high-speed ball mill, and then sodium dodecylbenzenesulfonate in an amount of 1.25% of the mass of the nano-ZnO particles is dissolved in 2 times the volume of deionized water and stirred until completely dissolved, then loaded In the atomizer, first adjust the high-speed ball mill to a low speed of 100r / min, and spray the sodium dodecylbenzenesulfonate solution on the surface of the nano-ZnO particles while the ball mill is rotating. After spraying, increase the speed of the high-speed ball mill to 100r / min. 4500r / min for ball milling pretreatment for 20min, after natural ventilation and drying, then add the modified nano-ZnO particles, aniline, ammonium persulfate initiator into the autoclave, first pass a small amount of CO 2 Exhaust the internal air, and then inject CO with a high-p...

Embodiment 2

[0029] This embodiment is the same as embodiment 1, and the difference is that in the present embodiment, the nano-inorganic particles are Al 2 o 3 , the surfactant is sodium dodecylsulfonate, the addition amount is 0.8% of the mass of nano-ceramic particles, and the condition of magnetron sputtering is that the vacuum degree is 5×10 - 4 Pa, the gas flow rate is 8mL / min, the working pressure is 0.6Pa, the sputtering power is 50w, and the sputtering time is 80s.

Embodiment 3

[0031] The present embodiment is the same as Example 1, and the difference is that in the present embodiment, the nano-inorganic particle graphene, the surfactant addition is 1.5% of the nano-ceramic particle quality, and the nano-inorganic particle, aniline and initiator mass ratio are 0.35:1: 0.015, the condition of magnetron sputtering is that the vacuum degree is 8×10 -4 Pa, the gas flow rate is 17mL / min, the working pressure is 0.9Pa, the sputtering power is 75w, and the sputtering time is 100s.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a dielectric material for a high energy storage capacitor, the invention relates to the technical field of dielectric materials, the preparation methoduses polyaniline coated with inorganic nanoparticles as a filler, polyvinylidene fluoride as polymer matrix, metal Ni as the load. Firstly, the surface of inorganic nanoparticles is modified by physical ball milling and chemical surfactant, a supercritical fluid reaction is adopted to coat polyaniline on the surface of the inorganic nanoparticles, so that a composite fill is prepared, the composite fill and the polyvinylidene fluoride are spun into a fibrous membrane by melt electrospinning, at last, the metal Ni load and the polyvinylidene fluoride are composited on the fiber membrane by magnetron sputter, the load of the metal Ni not only helps to fill the high porosity of the electrospun fiber film, but also helps to maintain high breakdown field strength, high energy storage density, high dielectric constant and low dielectric loss of the dielectric material, and the composite dielectric material has high energy storage performance.

Description

technical field [0001] The invention belongs to the technical field of dielectric materials, relates to the technical field of dielectric materials for high energy storage capacitors, and in particular to a preparation method of dielectric materials for high energy storage capacitors. Background technique [0002] Dielectric materials store energy in the form of electrostatics and have important applications in the information, electronics and power industries. With the rapid development of the electronics industry, the development and application of polymer matrix composites with high dielectric constant, low dielectric loss, low cost and easy processing has attracted more and more attention. In the field of electrical engineering, such polymer-based composite materials can be used as dielectric materials for capacitors with high energy storage density; in the field of microelectronics, high-capacitance embedded microcapacitors can be prepared on a large scale by selecting ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/14H01G4/18H01G4/16
CPCH01G4/14H01G4/16H01G4/18
Inventor 李海涛钱叶球邢武装
Owner 滨州高新高端装备制造产业园有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products