Samarium-doped bismuth ferrite-barium titanate ceramic film as well as preparation method and application thereof

A technology of ceramic film and bismuth ferrite, applied in the field of dielectric materials, to achieve the effects of high breakdown field strength, excellent energy storage performance, and high energy storage efficiency

Active Publication Date: 2021-10-12
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high residual polarization and leakage current intensity limit the application of this system in the field of energy storage, and the highest energy storage density achieved so far is only 80J / cm 3 , the breakdown is only 3.1MV / cm (Nano Energy 71, 104536 (2020))

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  • Samarium-doped bismuth ferrite-barium titanate ceramic film as well as preparation method and application thereof
  • Samarium-doped bismuth ferrite-barium titanate ceramic film as well as preparation method and application thereof
  • Samarium-doped bismuth ferrite-barium titanate ceramic film as well as preparation method and application thereof

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preparation example Construction

[0029] The preparation method of the above-mentioned a kind of samarium-doped bismuth ferrite-barium titanate ceramic thin film that the present invention proposes, described method specifically comprises the following steps:

[0030] Step 1): The raw materials are mixed and batched, ball milled, dried and sieved to obtain the raw material powder;

[0031] In this step, the Bi 2 o 3 , Fe 2 o 3 、BaCO 3 、TiO 2 and Sm 2 o 3The raw materials are mixed and proportioned according to the selected stoichiometric ratio, the raw materials are mixed with the organic solvent, and ball milling, drying and sieving are performed successively to obtain uniformly mixed raw material powders; according to the embodiments of the present invention, the chemical composition of the raw materials Composition is not particularly limited, and those skilled in the art can select according to actual needs, and according to a specific embodiment of the present invention, the composition of raw mate...

Embodiment 1

[0052] Raw material Bi 2 o 3 , Fe 2 o 3 、BaCO 3 、TiO 2 and Sm 2 o 3 Press x(Bi 1-y SM y )FeO 3 -(1-x)(Ba 1-y SM y )TiO 3 (x=0.30, y=0.15) carry out batching, wherein Bi 2 o 3Raw material excess 5%. The raw material is ball milled with absolute ethanol for 6 hours, dried and sieved, and the obtained powder is pre-fired at 700 degrees Celsius for 2 hours. After grinding the obtained powder, add polyvinyl alcohol solution with a concentration of 5% (mass percentage) to granulate, press it into a tablet under an 8MPa tablet press, and then use 25MPa cold isostatic pressing for 10 minutes to obtain a diameter of about 1 Inch, about 5mm thick wafer green body. After heat preservation and removal of polyvinyl alcohol, the green wafer was buried and fired at 1050 degrees Celsius for 2 hours to obtain a high-quality samarium-doped bismuth ferrite-barium titanate solid solution ceramic target.

[0053] The solid solution ceramic target is bombarded with a pulsed laser t...

Embodiment 2

[0056] Raw material Bi 2 o 3 , Fe 2 o 3 、BaCO 3 、TiO 2 and Sm 2 o 3 Press x(Bi 1-y SM y )FeO 3 -(1-x)(Ba 1-y SM y )TiO 3 (x=0.30, y=0.30) carry out batching, wherein Bi 2 o 3 Raw material excess 10%. The raw material is ball milled with absolute ethanol for 6 hours, dried and sieved, and the obtained powder is pre-fired at 700 degrees Celsius for 2 hours. After grinding the obtained powder, add polyvinyl alcohol solution of 5% (mass percentage) concentration to granulate, press into tablets under a 6MPa tablet press, and then use 25MPa cold isostatic pressing for 10 minutes to obtain a diameter of about 1 inch, about 7mm thick. After heat preservation and removal of polyvinyl alcohol, the green wafer was buried and fired at 1150 degrees Celsius for 2 hours to obtain a high-quality samarium-doped bismuth ferrite-barium titanate solid solution ceramic target.

[0057] The solid solution ceramic target is bombarded with a pulsed laser to ablate and vaporize the t...

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Abstract

The invention discloses a samarium-doped bismuth ferrite-barium titanate ceramic film as well as a preparation method and application thereof, and belongs to the technical field of dielectric materials. The chemical general formula of the film is x (Bi1-yScy) FeO3-(1-x) (Ba1-yScy) TiO3, wherein x and y are mole fractions, x is more than 0 and less than 1, and y is more than 0 and less than 1. The preparation method comprises the following steps of: mixing Bi2O3, Fe2O3, BaCO3, TiO2 and Sm2O3 according to a selected stoichiometric ratio to obtain raw material powder; pre-sintering the raw material powder to obtain a ceramic blank; carrying out buried sintering to obtain a ceramic target material; and bombarding the target material by using pulse laser, and carrying out annealing treatment to obtain the ceramic film. Experiments prove that the breakdown field strength of the film can reach 4-5.3 MV/cm, the energy storage density can reach 152 J/cm < 3 >, and the energy storage efficiency is about 78%; and the film is a novel dielectric material which has high breakdown field strength and high energy storage density and is environment-friendly.

Description

technical field [0001] The invention relates to a bismuth ferrite-barium titanate ceramic film and its preparation method and application, in particular to a samarium-doped bismuth ferrite-barium titanate ceramic film and its preparation method and application, belonging to the technical field of dielectric materials . Background technique [0002] Electrostatic capacitors with the characteristics of ultra-fast charge and discharge speed, ultra-high power density, long working life and high voltage resistance are an important class of energy storage devices, and are widely used in pulse power technology, electrical systems and other fields. However, the energy density of general electrostatic capacitors is low, and the development of dielectric materials with high energy storage density is one of the key issues to be solved in this field. [0003] Inorganic materials have high dielectric constant and strong spontaneous polarization, and are a class of dielectric materials w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/468C04B35/622C04B35/638
CPCC04B35/468C04B35/62218C04B35/638C04B2235/3224C04B2235/3272C04B2235/3298C04B2235/6567C04B2235/95
Inventor 林元华蓝顺潘豪刘亦谦南策文
Owner TSINGHUA UNIV
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