6 results about "Field emission current" patented technology

The invention relates to a method and system for detecting the vacuum degree of a vacuum arc-extinguishing chamber based on high-frequency discharge and spectral analysis, and the method comprises the steps: exciting the interior of the vacuum arc-extinguishing chamber to generate field emission current through a high-frequency electric field, and obtaining a high-frequency current peak value through the spectral analysis of the field emission current; the vacuum degree is determined according to a pre-constructed vacuum degree-high-frequency current peak value standard relation curve, a high-frequency power source is connected to a vacuum arc extinguish chamber, the output voltage of the high-frequency power source is gradually increased until a vacuum gap breaks down, the voltage waveform in the process is recorded, and the total current of a loop is calculated; calculating a capacitive current component by combining the equivalent capacitance of the loop; and selecting a stable current section between two dielectric breakdown events in the total current, intercepting a current peak signal in the section, and subtracting the capacitive current component from the total current corresponding to the peak signal to obtain the field emission current. Compared with the prior art, the method has the advantages of high sensitivity, simplicity and convenience in operation, accurate result and the like.

This invention discloses a horizontally structured nano-air channel transistor based on multilayer thin films, belonging to the field of transistor technology. It includes an insulating substrate, a multilayer thin film cathode and anode disposed on its front side, with a nano-air channel formed between the cathode and anode. The multilayer thin film cathode is composed of alternating layers of conductive and insulating thin films. The anode is composed of a conductive material, or is composed of alternating layers of conductive and insulating thin films. Conductive sidewalls are also provided on one side of the multilayer thin film cathode and anode for electrical connection between the conductive thin film layers. This invention achieves a large field enhancement factor through the sharp edge structure of the multilayer thin films and effectively increases the field emission current of the transistor by utilizing the tandem emission of the multilayer thin films. Simultaneously, because vertical etching or corrosion processes can easily achieve 90-degree sidewalls, the isomorphism of the emission structure of each layer in the multilayer thin film is maintained, enabling simultaneous electron emission from the multilayer thin films in series to maintain a stable emission current.

This invention belongs to the field of microwave communication and electromagnetic protection technology, specifically providing a fast-response limiting and filtering integrated HPM protection device based on carbon nanotube field emission, to overcome many shortcomings of the existing technology. Based on existing limiting and filtering integrated high-power microwave protection devices, this invention introduces a carbon nanotube field emission limiting structure. Through carbon nanotube field emission, high-density deterministic seed electrons are provided, significantly shortening the gas breakdown avalanche setup time, thereby significantly reducing the total response time. Simultaneously, a metal-dielectric-metal three-layer coaxial DC bias structure is designed to apply a DC bias voltage to the carbon nanotube film to modulate the field emission current density, achieving real-time control of the response speed. Ultimately, the limiting and filtering integrated high-power microwave (HPM) protection device of this invention has a faster response speed, more stable limiting performance, and the response speed can be actively controlled.

The invention provides a carbon nanotube cold cathode miniature vacuum sensor and a field emission current response detection method thereof, and relates to the technical field of micro-nano sensing and vacuum metrology, the sensor comprises an insulating substrate, a cold cathode array is arranged on the insulating substrate, an anode electrode is arranged on the insulating substrate through an insulating pillar corresponding to the cold cathode array, and the anode electrode is connected with the cold cathode array. A glass cover plate is arranged on the insulating substrate, the cold cathode array and the anode electrode are covered by the glass cover plate to form a vacuum cavity, and the cold cathode array and the anode electrode are connected with a signal acquisition and processing module; the method comprises the steps of applying pulse voltage, collecting field emission current, carrying out noise reduction processing on the collected field emission current, carrying out temperature compensation on the field emission current after noise reduction processing, and carrying out vacuum degree calculation based on the compensated field emission current. The vertical electric field configuration design and the deep learning algorithm are fused, the performance boundary of a traditional vacuum sensor is broken through, a good technical effect is achieved, and use is convenient.

The application provides a double-layer field emission cold cathode electron source and a manufacturing method thereof, relates to the field of nano-electronic technology, and the double-layer field emission cold cathode electron source comprises, from bottom to top, a first cathode, an insulating layer, a second cathode and a gate electrode; the first cathode comprises a conductive substrate and a first layer of field emission body, and the first layer of field emission body is arranged on the upper surface of the conductive substrate; the second cathode comprises a conductive grid and a second layer of field emission body, and the second layer of field emission body is arranged on the upper surface of the conductive grid; by increasing the effective emission area of the cold cathode emission body, the field emission current and the current density are improved; the manufacturing method is simple, has high universality and high repeatability, is beneficial to the current improvement of the field emission electron source, and provides a feasible scheme for promoting the application of the large-current electron source in vacuum microelectronic devices.

This invention discloses a plasmon-enhanced carbon nanotube field emission device, its fabrication method, and its applications. The device includes an insulating substrate, a concentric circular metal grating on the substrate, anode and cathode electrodes located in the central region of the grating, and carbon nanotubes bridging the electrodes and forming nanoscale gaps. By designing the grating period to match the incident laser wavelength, surface plasmons can be excited, generating a localized electric field enhancement at the center, thereby significantly reducing the electron tunneling barrier at the carbon nanotube tip and increasing the field emission current. This invention also provides a corresponding fabrication method, including the patterning of the grating and electrodes, the deposition and patterning of the carbon nanotube thin film, and the formation of the nanoscale gaps. This device has a simple structure, effectively avoids thermal damage caused by direct laser radiation, and has application potential in fields such as field emission enhancement, optical signal detection, and optoelectronic modulation.