Nano wall structure composed of flaky tin oxide and preparation method thereof

A nano-wall and tin oxide technology, applied in chemical instruments and methods, gaseous chemical plating, from chemically reactive gases, etc., to achieve the effect of simple method, low reaction temperature, and reduced equipment requirements

Inactive Publication Date: 2014-12-17
XIAN UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

SnO 2 The study of nanostructures has also made significant progress. In recent years, people have prepared SnO with rich morphology by using various methods such as solution method, molecular beam epitaxy, pulsed laser deposition, and metal-organic chemical vapor deposition. 2 Nanostructures, such as nanow

Method used

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  • Nano wall structure composed of flaky tin oxide and preparation method thereof
  • Nano wall structure composed of flaky tin oxide and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] 1. Proportion the stannous oxide powder and carbon powder according to the mass ratio of 2.5:1, add absolute ethanol, mix thoroughly by ultrasonic and dry as the source material;

[0018] 2. Heat the horizontal tubular growth furnace to 650°C at a rate of 15°C / min;

[0019] 3. Spread the source material in a quartz boat, put a silicon wafer as the substrate vertically at the outlet of the source material, the distance between the substrate and the source material is about 0.5cm, put the quartz boat carrying the source and substrate The boat is placed in the middle of the preheated horizontal tube furnace;

[0020] 4. Introduce high-purity argon gas with a flow rate of 0.5L / min as a protective gas, keep the gas outlet of the high-temperature furnace in a semi-closed state, and turn off the furnace after reacting at atmospheric pressure for 90 minutes, allowing it to cool naturally to room temperature. Keep the flow of argon gas constant;

[0021] 5. Take out the quartz...

Embodiment 2

[0023] 1. Proportion the stannous oxide powder and carbon powder according to the mass ratio of 1:1, add absolute ethanol, mix thoroughly by ultrasonic and dry as the source material;

[0024] 2. Heat the horizontal tubular growth furnace to 750°C at a rate of 15°C / min;

[0025] 3. Spread the source material in a quartz boat, put a silicon wafer as the substrate vertically at the outlet of the source material, the distance between the substrate and the source material is about 0.5cm, put the quartz boat carrying the source and substrate The boat is placed in the middle of the preheated horizontal tube furnace;

[0026] 4. Introduce high-purity argon gas with a flow rate of 0.4L / min as a protective gas, keep the gas outlet of the high-temperature furnace in a semi-closed state, and turn off the furnace after reacting at atmospheric pressure for 70 minutes, allowing it to cool naturally to room temperature. Keep the flow of argon gas constant;

[0027] 5. Take out the quartz b...

Embodiment 3

[0029] 1. Proportion the stannous oxide powder and carbon powder according to the mass ratio of 3:1, add absolute ethanol, mix thoroughly by ultrasonic and dry as the source material;

[0030] 2. Heat the horizontal tubular growth furnace to 850°C at a rate of 15°C / min;

[0031] 3. Spread the source material in a quartz boat, put a silicon wafer as the substrate vertically at the outlet of the source material, the distance between the substrate and the source material is about 0.5cm, put the quartz boat carrying the source and substrate The boat is placed in the middle of the preheated horizontal tube furnace;

[0032] 4. Introduce high-purity argon gas with a flow rate of 0.3L / min as a protective gas, keep the gas outlet of the high-temperature furnace in a semi-closed state, and turn off the furnace after reacting at atmospheric pressure for 60 minutes, allowing it to cool naturally to room temperature. Keep the flow of argon gas constant;

[0033] 5. Take out the quartz b...

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Abstract

The invention particularly relates to a nano wall structure composed of flaky tin oxide and a preparation method thereof. The method takes a stannous oxide powder and carbon powder mixture as a source material, and utilizes a thermal evaporation method for growing. The edge of the prepared nano wall structure is irregular, the side face of each wall is not smooth, the diameter is about 100-1000 nm, and the thickness is about 30 nm. The nano wall structure can be grown on a silicon slice substrate in a large area; with the characteristics of unique structure, oxidation resistance, high-temperature resistance, high field emission current density, lower turn-on field, effective avoiding of a field shielding effect, good emission stability and the like, an application of the nano wall structure in a field emission device can be achieved; and the structure has large specific surface area, can obviously enhance sensitive properties of a tin oxide material on various chemical gases, can be used as a gas sensitized material applied in the micro/nano sensor field, thereby having great scientific research values and wide commercial application prospects.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials, semiconductor materials and devices, and specifically relates to a nano-wall structure composed of flaky tin oxide and a thermal evaporation method used to form the nano-wall structure on a silicon wafer substrate under the conditions of atmospheric pressure and argon atmosphere. A fabrication method to obtain large areas of such structures. technical background [0002] SnO 2 As an important functional wide-bandgap semiconductor material, due to its excellent optical and electrical properties, it has broad potential application prospects in many fields such as gas sensors, transparent conductive materials, solar cells, and transistors. Nanostructures have attracted intense interest in recent years due to their special physical properties and applications in nanoscale devices. SnO 2 The study of nanostructures has also made significant progress. In recent years, people have pr...

Claims

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Application Information

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IPC IPC(8): C30B29/64C23C16/448C30B25/00C23C16/40C30B29/16
Inventor 李立珺郁可
Owner XIAN UNIV OF POSTS & TELECOMM
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