Filed-effect tube channel type field emission cathode and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- XI AN JIAOTONG UNIV
- Publication Date
- 2015-10-21
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the field of vacuum microelectronics, and relates to a field emission cathode modulated by an external channel bias voltage and a back grid voltage and a preparation method thereof. Background technique
[0002] Integrated vacuum electronic devices require the cathode to have higher electron beam current density output, higher operating frequency, smaller cathode size and higher assembly precision. Compared with hot cathodes, which rely on increasing the kinetic energy of electrons to escape the surface barrier of materials, field emission cathodes with higher emission efficiency are the most promising solutions for integrated vacuum electronics. The development of field emission cathodes has gone through the earliest Spindt-type cathodes to nano-cold cathodes in recent years. The practical application of Spindt-type cathode technology is not smooth. Taking the silicon cone field emission array as an example, even thanks to th...