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4 results about "Surface barrier" patented technology

The surface-barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy-junction transistor and the earlier point-contact transistor.Like the modern Schottky transistor, it offered much higher speed than earlier transistors and used metal–semiconductor junctions (instead of semiconductor–semiconductor junctions), but unlike the schottky transistor ...

Photovoltaic panel cooling device and method of its operation

The subject of the application, shown in the drawing, is a device and method for cooling photovoltaic panels with an airflow generated by a surface barrier discharge to improve their efficiency under elevated temperatures. The device's design enables the generation of an airflow to cool the underside of the photovoltaic panel. A surface barrier discharge battery, which has no moving parts and is weather-resistant, is used to generate the airflow.
Owner:INST MASZYN PRZEPYWOWYCH IM ROBERTA SZEWALSKIEGO POLSKIEJ AKADI NAUK

High-barrier composite material for PET blister tray and preparation method thereof

PendingCN122343578ASurface barrierFood products
The application provides a kind of high barrier PET blister tray composite material and preparation method thereof, it is related to PET blister tray technical field, including the base PET layer, gradient barrier intermediate layer and surface barrier coating layer that are sequentially stacked from inside to outside by composite.The application effectively overcomes the industry pain points of traditional PET / EVOH multilayer material interlayer easy peeling, EVOH hydrophilic barrier loss and heat forming size instability, the gradient intermediate layer uses in-situ reaction blending and nanosheet intercalation to construct long-range tortuous diffusion path, cooperates with atmospheric pressure plasma treatment to generate high-density-COOH / -OH active sites in-situ at interface, makes ultra-thin SiO2-GPTMS hybrid coating and base film form covalent bond level chemical anchoring, maintains ≥88% light transmittance, ≤0.8% heat shrinkage and 85℃ / 85%RH aging 500h after ≤5% barrier attenuation rate of long-term stability under 110℃ blister heat forming conditions, provides ideal packaging solution for food, medicine and precision electronics and other high-sensitivity products, which has extreme freshness and moisture-proof, excellent heat processing adaptability and full life cycle reliability.
Owner:HEFEI YUNSHENG JI PACKING MATERIAL CO LTD

Semiconductor epitaxial structure, preparation method therefor and use thereof

ActiveCN121463605BValence bandAcceptor impurity
The application provides a semiconductor epitaxial structure, a preparation method and application thereof. The p-type semiconductor layer of the semiconductor epitaxial structure comprises a p-type barrier layer, the p-type barrier layer comprises at least one p-type structure, the p-type structure comprises a barrier front sublayer, a p-type nitride microstructure and a barrier rear sublayer arranged in sequence, the p-type nitride microstructure comprises a plurality of nano protrusions distributed on the surface of the barrier front sublayer away from the active layer, the barrier rear sublayer covers the plurality of nano protrusions and the surface of the barrier front sublayer not covered by the nano protrusions; the material of the barrier front sublayer is a first nitride doped with an acceptor impurity, the material of the nano protrusions is a second nitride, and the valence band of the second nitride is higher than that of the first nitride. The p-type nitride microstructure is arranged in the p-type barrier layer to reduce the activation energy of the acceptor doping, and a stronger polarization effect is formed at the interface, so that the hole concentration is improved.
Owner:JIANGSU INST OF ADVANCED SEMICON CO LTD

A method for controlling and evaluating the content of non-condensable gas in a high-temperature heat pipe

PendingCN122307030AImprove stabilityImprove reliabilityThermodynamicsSurface barrier
This invention belongs to the field of heat pipe technology, specifically relating to a method for controlling and online evaluating the content of non-condensable gases in high-temperature heat pipes. The invention includes the following steps: S1, deep cleaning of materials to eliminate non-condensable gases and other impurities dissolved or adsorbed from the end caps, shell, wick, and filling tube; S2, process cleaning to ensure that no new contaminants are introduced during assembly and welding; S3, heat pipe purification and venting to complete the injection of the working fluid and the final purification and venting within the heat pipe; S4, long-term surface barrier to prevent helium and hydrogen from permeating into the heat pipe. This invention addresses the entire process from materials, manufacturing, filling, and testing, achieving proactive and precise control and quantitative evaluation of non-condensable gas content from three dimensions: source control, process elimination, and online evaluation. This improves the long-term reliability and performance consistency of heat pipes under various complex environments.
Owner:NUCLEAR POWER INSTITUTE OF CHINA