6 results about "Pulse plating" patented technology

The invention discloses a high-uniformity PCB pattern electroplating method based on pulse electroplating, and aims to solve the problem of insufficient copper thickness uniformity caused by residual copper rate difference, unreasonable process edge design, poor accompanying plating plate adaptability and direct current electroplating defects in traditional pattern electroplating. A plating block is arranged on the process edge of a PCB to share current, a special accompanying plating plate matched with the residual copper rate is configured to optimize an electric field, an electroplating solution containing Fe < 2 + > / Fe < 3 + > redox electron pairs and an insoluble titanium mesh anode are adopted, the two-step pulse electroplating process is combined, and the additive ratio and electroplating environment parameters are regulated and controlled, so that uniform deposition of a copper layer is achieved. The method effectively solves the problems that the local copper layer is too thick / too thin, and filling defects exist in the hole, and improves the reliability and signal transmission performance of the PCB coating.

The invention discloses an AI high-frequency high-speed electronic substrate-oriented ion beam composite regulation and control method, and relates to the technical field of semiconductor manufacturing and electronic packaging. Comprising the following steps: (1) carrying out ion implantation modification on the surface of a base material; (2) depositing and bonding a seed crystal layer by a magnetic filtering cathode vacuum arc; (3) depositing an ultralow-profile initial conductor layer through high-power pulse magnetron sputtering; (4) performing pulse electroplating to thicken the conductor; and (5) surface ion beam polishing. Through the dual effects of ion beam deposition and polishing, a conductor circuit with an extremely smooth surface is manufactured, the conductor loss of a millimeter wave frequency band is remarkably reduced, the dielectric property is improved by combining ion implantation, so that the insertion loss in a 50-60GHz frequency band can be stably controlled at-1.1 dB / inch or lower, and international leading technical indexes are benchmarked and even exceeded.

The application discloses an explosion-proof magnetostrictive displacement sensor and relates to the field of displacement sensors, which solves the problems of poor sealing, weak anti-interference ability and poor explosion-proof performance of the prior art magnetostrictive displacement sensor. The explosion-proof magnetostrictive displacement sensor comprises a first protective cover, a sensing circuit assembly, a measuring rod, a ring-shaped magnet and a second protective cover. The sensing circuit assembly comprises a filter plate, a pulse plate, a signal plate and a sensitive assembly. The measuring rod comprises a rod sleeve connected to the outer wall of the first protective cover, a position sensing assembly located in the rod sleeve and connected to the sensitive assembly and a shielding pipe sleeved on the outer wall of the position sensing assembly and located in the rod sleeve. An end of the second protective cover away from the first protective cover is formed with a penetrating hole for penetrating a cable, a rubber sleeve is arranged between the hole wall of the penetrating hole and the cable, the cable is electrically connected to the filter plate, and the pulse plate, the signal plate and the sensitive assembly are all electrically connected to the filter plate.

The utility model relates to the technical field of ion optics, and particularly discloses a time-of-flight mass selector structure which comprises a main body structure, first fixing plates are installed on the two sides of the main body structure respectively, the main body structure comprises a first pulse plate, a second pulse plate, a third pulse plate and a fourth pulse plate, a tungsten wire net is arranged on one side of the third pulse plate, and a third pulse plate is arranged on the other side of the fourth pulse plate. A high-voltage pulse source is arranged on one side of the first pulse plate, and a reverse high-voltage pulse source is arranged between the third pulse plate and the fourth pulse plate. According to the utility model, the time-of-flight mass selector is arranged based on the transverse displacement technology of the ion beams, part of the ion beams are accelerated in the direction perpendicular to the original direction by applying a pulsed electric field, and after drifting for a certain time, the vertical movement of the ion beams is stopped through a reverse pulsed electric field, so that the mass selection function is realized; according to the working principle, ion beams with different masses can generate different transverse displacements according to the mass difference of ions, so that the selection of a specific mass range in the ion beams is realized.

The application discloses a high-aspect-ratio PCB through-hole pulse electroplating method based on deep plating capacity time evolution law. The method comprises the following steps: (1) selecting at least two pulse electroplating waveforms with different positive and negative current density ratios and positive and negative time ratios, and performing single waveform electroplating experiments on target PCB through holes; (2) measuring the hole plating layer thickness and the plate surface plating layer thickness of the PCB through hole under different electroplating time conditions, and calculating the deep plating capacity TP value respectively; (3) according to the law of the deep plating capacity TP value changing with the electroplating time, the deep plating capacity advantage time interval corresponding to each pulse electroplating waveform is determined; (4) different pulse electroplating waveforms are matched and combined according to the deep plating capacity advantage time interval, and then the target PCB through hole is electroplated, so that the problem that a single waveform cannot simultaneously consider the deposition rate and uniformity in the electroplating of the high-aspect-ratio PCB through hole in the prior art is solved.

The application discloses a single-crystal epitaxial thin film laser pulse coating device and a preparation method. The single-crystal epitaxial thin film laser pulse coating device comprises a first platform, a first driving mechanism, a second platform, a laser source and a baffle. The first driving mechanism drives the first platform to rotate. The baffle is located between the first platform and the second platform and has a through hole for the central region of a plume to pass through. The preparation method is performed by using the coating device. The baffle is only used for the central region of the plume to pass through. The atomic energy of the central region of the plume is high and has the same orientation, so that the thin film on the substrate can be epitaxially grown in a single orientation. By changing the relative position of the through hole and the substrate, the deposition region of the plume on the substrate can be changed, so that a plurality of continuously distributed coating areas are formed on the surface of the substrate, thereby forming a large-area single-crystal epitaxial thin film on the substrate.