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Method for preparing bismuth film by pulse plating process

A pulse electroplating and process technology, applied in the field of preparation of metal bismuth thin films, to achieve stable performance, simple preparation process, and good bonding force

Inactive Publication Date: 2011-01-12
SOUTHWEAT UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are almost no reports on the preparation method of bismuth thin films. Therefore, research on the preparation of bismuth thin films is of great significance to the development and application of "green metal" bismuth and the research of new materials.

Method used

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  • Method for preparing bismuth film by pulse plating process
  • Method for preparing bismuth film by pulse plating process
  • Method for preparing bismuth film by pulse plating process

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Embodiment 1

[0035] A method for preparing a bismuth film by a pulse electroplating process, comprising the following steps:

[0036] a. Preparation of electroplating solution: mainly bismuth trichloride 40g / L, potassium sodium tartrate 100g / L, potassium citrate 55g / L, antimony potassium tartrate 0.35g / L, potassium chloride 50g / L, dodecyl sulfate The composition and content of sodium 0.02g / L, thiourea 0.35g / L, get each component, mix with water, adjust with potassium hydroxide aqueous solution (can be the potassium hydroxide aqueous solution of 40% concentration by mass percentage, the same hereinafter) The pH value of the mixed solution is 7.5 to 8.5 to prepare the electroplating solution;

[0037] b. Pulse electroplating: inject the electroplating solution into the electroplating equipment, use the copper sheet as the cathode and the pure gold plate as the anode, at a current density of 0.55A / dm 2 , the frequency is 500Hz, the duty ratio is 1:7, the temperature of the electroplating sol...

Embodiment 3

[0039] A method for preparing a bismuth film by a pulse electroplating process, comprising the following steps:

[0040] a, preparation of electroplating solution: mainly by the composition and content of bismuth trichloride 80g / L, potassium sodium tartrate 190g / L, potassium citrate 50g / L, antimony potassium tartrate 0.35g / L, potassium chloride 50g / L, take Each component is mixed with water, and the pH value of the mixed solution is adjusted to 8.5 to 9.5 with an aqueous potassium hydroxide solution to obtain an electroplating solution;

[0041] b. Pulse electroplating: inject the electroplating solution into the electroplating equipment, use the copper sheet as the cathode and the pure gold plate as the anode, at a current density of 0.65A / dm 2 , the frequency is 600Hz, the duty ratio is 1:8, the temperature of the electroplating solution is 35°C, the electrode spacing is 7cm, and the pH value is 8.5-9.5, and the film deposited on the surface of the cathode copper sheet is pr...

Embodiment 4-11

[0047] A method for preparing a bismuth film by a pulse electroplating process, comprising the following steps:

[0048] a. Preparation of electroplating solution: see the following table for the composition and content of the electroplating solution, take each component, mix with water, adjust the pH value of the mixed solution to 7.5-11.5, and prepare the electroplating solution;

[0049]

[0050] b. Pulse electroplating: inject the electroplating solution into the electroplating equipment, use the copper sheet as the cathode and the pure gold plate as the anode, at a current density of 0.55-0.85A / dm 2 , The frequency is 500-700Hz, the duty ratio is 1:7-1:11, the temperature of the electroplating solution is 25-50°C, the distance between the cathode copper sheet and the anode pure gold plate is 5-8cm, and the pH value is 7.5 Electroplating is carried out under the process conditions of ~11.5 (it can be any point or a combination of intervals under the process conditions),...

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Abstract

The invention discloses a method for preparing a bismuth film by a pulse plating process. The method is characterized by comprising the following steps of: preparing one liter of plating solution by using 40 to 120g of bismuth trichloride, 80 to 240g of sodium potassium tartrate, 40 to 60g of potassium citrate, 0.20 to 0.35g of antimony potassium tartrate and 50 to 80g of potassium chloride; and plating by using a copper sheet as a cathode and using a pure gold plate as an anode under the pulse plating process conditions that the current density is 0.55 to 0.85A / dm<2>, the frequency is 500 to 700Hz, the duty ratio is 1:7-1:11, the temperature of the plating solution is 25 to 50 DEG C and the pH value is 7.5 to 11.5, wherein the film deposited on the copper sheet is the prepared bismuth film. The cyanogen-free plating solution is environmentally-friendly and has stable performance; and the prepared bismuth film has smooth and bright surface, low porosity, good bonding force and easily controlled thickness, and has broad application prospect in the fields of electronic materials, component industry and the like.

Description

technical field [0001] The invention belongs to a method for preparing a metal bismuth thin film, and relates to a method for preparing a bismuth thin film by a pulse electroplating process. The bismuth thin film prepared by the invention has potential applications in the fields of electronic material and components industry and the like. Background technique [0002] The rapid development of pulse electroplating technology in recent years has fully demonstrated the incomparable advantages of many traditional electroplating methods. The pulse electroplating process can make the crystallization of the coating thin, arrange closely, reduce pores, and increase hardness. In view of the above advantages, it is widely used in the electrochemical preparation of various single metal or alloy coating films. [0003] The electroplating solution is divided into cyanide-containing plating solution and cyanide-free plating solution. Among them, the cyanide-containing plating solution is...

Claims

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Application Information

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IPC IPC(8): C25D3/54C25D5/18
Inventor 戴亚堂张红强张欢魏自创刘芳芳
Owner SOUTHWEAT UNIV OF SCI & TECH
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