Method for improving carbon nanotube field emitting performance through diamond-like carbon film

A field emission and performance technology, applied in the manufacture of discharge tubes/lamps, electrical components, cold cathode manufacturing, etc., can solve problems such as reducing the field emission threshold voltage

Active Publication Date: 2014-10-29
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are still many problems in the research of field emission materials, mainly how to obtain materials with high aspect ratio, how to improve the stability of field emission materials, and how to further reduce the threshold voltage of field emission, etc.

Method used

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  • Method for improving carbon nanotube field emitting performance through diamond-like carbon film
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  • Method for improving carbon nanotube field emitting performance through diamond-like carbon film

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Experimental program
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Effect test

Embodiment 1

[0052] A kind of method utilizing DLC ​​to improve CNT field emission performance, its basic process is as figure 1 shown, including the following steps:

[0053] (1) Substrate preparation. The silicon wafers were respectively placed in acetone, alcohol, and deionized water for 10 minutes of ultrasonic vibration to remove impurities on the surface of the silicon wafers. Fabricate a patterned array on a clean silicon wafer surface using UV lithography. If the CNT does not require patterned growth, no patterning process is required. Subsequently, 100nm titanium (Ti), 50nm copper (Cu), 30nm aluminum (Al), and 0.5nm iron (Fe) were produced on the surface of the silicon wafer by electron beam evaporation technology to obtain a CNT growth substrate.

[0054] (2) CNT growth. Place the sample in a closed heating system, and first evacuate the system to below 0.1mbar. Then feed 700sccm hydrogen (H 2 ), so that the system pressure is maintained at 30mbar. The temperature of the s...

Embodiment 2

[0057] A method utilizing DLC ​​to improve CNT field emission performance, comprising the following steps:

[0058] (1) Substrate preparation. Place the stainless steel sheet in acetone, alcohol, and deionized water for 10 minutes of ultrasonic vibration to remove impurities on the surface of the stainless steel sheet. Patterned arrays were fabricated on clean stainless steel surfaces using electron beam lithography. If the CNT does not require patterned growth, no patterning process is required. Subsequently, 100nm gold (Au), 50nm graphene, 5nm TiN, and 15nm cobalt (Co) were produced on the surface of the silicon wafer by electron beam evaporation technology to obtain a CNT growth substrate.

[0059] (2) CNT growth. Place the sample in a closed heating system, and first evacuate the system to below 0.1mbar. Then 600 sccm of hydrogen (H2) was fed into the system to keep the system pressure at 1 mbar. The temperature of the system is raised to 600°C for pretreatment for 1 ...

Embodiment 3

[0062] A method utilizing DLC ​​to improve CNT field emission performance, comprising the following steps:

[0063] (1) Substrate preparation. Place the copper sheet in acetone, alcohol, and deionized water for 10 minutes of ultrasonic vibration to remove impurities on the surface of the copper sheet. Fabricate patterned arrays on clean copper surfaces using nanoimprint lithography. If the CNT does not require patterned growth, no patterning process is required. Subsequently, 20nm molybdenum (Mo), 35nm tungsten (W), 12nm ITO, and 11nm ferrocene were produced on the surface of the silicon wafer by electron beam evaporation technology to obtain a CNT growth substrate.

[0064] (2) CNT growth. Place the sample in a closed heating system, and first evacuate the system to below 0.1mbar. Pass into 630sccm hydrogen (H 2 ), so that the system pressure remains at 20mbar. The temperature of the system is raised to 560°C for 6 minutes of pretreatment, and then the temperature of th...

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Abstract

The invention relates to a method for improving carbon nanotube (CNT) field emitting performance through a piece of diamond-like carbon film (DLC). The method for improving the carbon nanotube (CNT) field emitting performance through the diamond-like carbon film (DLC) improves the field emitting performance of the CNT through using the DLC to coat the surface of the CNT. The DLC film has a negative surface affinity characteristic so that the DLC film is capable of changing the surface property of the CNT, lowering the opening field intensity of the CNT field emission and improving the field emitting current density of the CNT; the DLC film comprises a carbon atom sp3 hybrid structure ingredient so that the DLC film has good mechanical property and is capable of protecting the packaged CNT in a certain degree and improving the stability of the CNT field emitting performance; the method is capable of growing regularly arrayed array structures of upright CNT and DLC composite and obtaining the ideal CNT and DLC composite through regulating growth parameters; the method for improving the carbon nanotube field emitting performance through the diamond-like carbon film is convenient for the practical application.

Description

technical field [0001] The invention relates to a method for improving the field emission performance of a carbon nanotube (CNT) by using a diamond-like film (DLC). Background technique [0002] Field electron emission depends on the external electric field to suppress the surface barrier of the material. When the barrier is lowered and narrowed to a certain extent, free electrons can enter the vacuum by tunneling effect. This electron emission method is also called cold cathode electron emission because it does not require heating of the cathode. Compared with the traditional thermal electron emission, the cold cathode emission avoids the heating process of the emitter, has no warm-up delay, and significantly reduces the power consumption of the cathode. At the same time, the field emission cold cathode also has the advantages of high emission current density, concentrated electron energy distribution, and can work at a relatively low voltage. Common field emission cold c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/02
Inventor 李振军和峰白冰杨晓霞李驰裘晓辉戴庆
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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